Patents by Inventor Hyo Sub Kim
Hyo Sub Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240106073Abstract: Provided are a separator coating composition for a secondary battery including inorganic particles and a silane salt compound having a specific structure, a separator using the same, and an electrochemical device including the same. Specifically, a separator coating composition for a secondary battery which implements adhesion between an inorganic material layer and a porous substrate without including an acid/polymer-based organic binder in a coating composition for forming the inorganic material layer on one or both surfaces of the porous substrate and does not need a separate dispersing agent for dispersing the inorganic particles, a separator manufactured using the same, and an electrochemical device including the separator are provided.Type: ApplicationFiled: September 13, 2023Publication date: March 28, 2024Inventors: Tae Wook KWON, Sang Ick LEE, Won Sub KWACK, Cheol Woo KIM, Hyo Shin KWAK, Heung Taek BAE
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Publication number: 20240088021Abstract: There are provided a semiconductor device and a manufacturing method thereof. The semiconductor device includes: a stack structure including a plurality of interlayer insulating layers and a plurality of gate conductive layers, which are stacked in an alternating manner; at least one support structure penetrating the stack structure in a substantially vertical manner, the at least one support structure being formed in a contact region; and a contact plug penetrating the stack structure in a substantially vertical manner, the contact plug being formed in the contact region, the contact plug being connected to a contact pad that is disposed on the bottom of the stack structure. The at least one support structure is formed of an oxide layer.Type: ApplicationFiled: November 16, 2023Publication date: March 14, 2024Applicant: SK hynix Inc.Inventors: Jae Yoon NOH, Tae Kyung KIM, Hyo Sub YEOM, Jeong Yun LEE
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Publication number: 20230422486Abstract: A semiconductor device includes a cell active pattern including a first portion and a second portion that are spaced apart from each other; a gate structure between the first portion and the second portion of the cell active pattern; a bit-line contact on the first portion of the cell active pattern; a connection pattern on the second portion of the cell active pattern; and a cell separation pattern in contact with the bit-line contact and the connection pattern, wherein the cell separation pattern includes a first sidewall in contact with the connection pattern and a second sidewall in contact with the bit-line contact, an upper portion of the second sidewall of the cell separation pattern is in contact with the bit-line contact, and a lower portion of the second sidewall of the cell separation pattern is spaced apart from the bit-line contact.Type: ApplicationFiled: February 14, 2023Publication date: December 28, 2023Inventors: Kiseok LEE, Jongmin KIM, Hyo-Sub KIM, Hui-Jung KIM, Sohyun PARK, Junhyeok AHN, Chan-Sic YOON, Myeong-Dong LEE, Woojin JEONG, Wooyoung CHOI
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Publication number: 20230320076Abstract: A semiconductor memory device includes: a device isolation pattern provided on a substrate to provide a first active portion and a second active portion; a first storage node pad disposed on the first active portion; a second storage node pad disposed on the second active portion; a pad separation pattern disposed between the first and second storage node pads; a word line disposed in the substrate to cross the first and second active portions; a bit line disposed on the pad separation pattern and crossing the word line; a buffer layer disposed on the pad separation pattern; and a mask polysilicon pattern interposed between the buffer layer and the bit line, wherein a side surface of the mask polysilicon pattern is substantially aligned to a side surface of the bit line, and the mask polysilicon pattern is vertically overlapped with the pad separation pattern.Type: ApplicationFiled: November 9, 2022Publication date: October 5, 2023Inventors: HYO-SUB KIM, Kseok LEE, Myeong-Dong LEE, Jongmin KIM, Hui-Jung KIM, Jihun LEE, Hongjun LEE
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Patent number: 11665883Abstract: A semiconductor memory device includes; a first impurity region and a second impurity region spaced apart in a semiconductor substrate, a bit line electrically connected to the first impurity region, a storage node contact electrically connected to the second impurity region, an air gap between the bit line and the storage node contact, a landing pad electrically connected to the storage node contact, a buried dielectric pattern on a sidewall of the landing pad and on the air gap, and a spacer capping pattern between the buried dielectric pattern and the air gap.Type: GrantFiled: March 16, 2021Date of Patent: May 30, 2023Assignee: Samsung Electronics Co., Ltd.Inventors: Inkyoung Heo, Hyo-Sub Kim, Sohyun Park, Taejin Park, Seung-Heon Lee, Youn-Seok Choi, Sunghee Han, Yoosang Hwang
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Publication number: 20230112907Abstract: A semiconductor memory device and a method of fabricating a semiconductor memory device, the device including a first impurity region in a substrate; a first bit line that crosses over the substrate and is connected to the first impurity region; a bit-line contact between the first bit line and the first impurity region; and a contact ohmic layer between the bit-line contact and the first impurity region, wherein a width of a bottom surface of the bit-line contact is greater than a width of a bottom surface of the contact ohmic layer.Type: ApplicationFiled: July 11, 2022Publication date: April 13, 2023Inventors: Hyo-Sub KIM, Junhyeok AHN, Myeong-Dong LEE, Hui-Jung KIM, Kiseok LEE, Jihun LEE, Yoosang HWANG
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Patent number: 11600570Abstract: A semiconductor memory device is disclosed. The device may include first and second impurity regions provided in a substrate and spaced apart from each other, the second impurity region having a top surface higher than the first impurity region, a device isolation pattern interposed between the first and second impurity regions, a first contact plug, which is in contact with the first impurity region and has a bottom surface lower than the top surface of the second impurity region, a gap-fill insulating pattern interposed between the first contact plug and the second impurity region, a first protection spacer interposed between the gap-fill insulating pattern and the second impurity region, and a first spacer, which is in contact with a side surface of the first contact plug and the device isolation pattern and is interposed between the first protection spacer and the gap-fill insulating pattern.Type: GrantFiled: November 13, 2020Date of Patent: March 7, 2023Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Hyo-Sub Kim, Sohyun Park, Daewon Kim, Dongoh Kim, Eun A Kim, Chulkwon Park, Taejin Park, Kiseok Lee, Sunghee Han
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Publication number: 20230035899Abstract: A semiconductor memory device with an improved electric characteristic and reliability is provided. The semiconductor memory device including a substrate including an active region defined by device separation film, the active region including a first part and second parts, the second parts being on two opposite sides of the first part, respectively a bit line extending on the substrate and across the active region, and a bit line contact between the substrate and the bit line and connected to the first part of the active region may be provided. The bit line contact includes a first ruthenium pattern, and a width of upper surface of the first ruthenium pattern is smaller than a width of bottom surface of the first ruthenium pattern.Type: ApplicationFiled: April 29, 2022Publication date: February 2, 2023Applicant: Samsung Electronics Co., Ltd.Inventors: Jang Eun LEE, Suk Hoon KIM, Hyo-Sub KIM
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Publication number: 20220384449Abstract: A semiconductor memory device includes a device isolation pattern on a substrate and defining a first active section, a first storage node pad on the first active section, a word line in the substrate and extending across the first active section, a bit line on the first storage node pad and crossing over the word line, a storage node contact on one side of the bit line and adjacent to the first storage node pad, and an ohmic layer between the storage node contact and the first storage node pad. A bottom surface of the ohmic layer is rounded.Type: ApplicationFiled: May 3, 2022Publication date: December 1, 2022Inventors: EUNJUNG KIM, HYO-SUB KIM, JAY-BOK CHOI, YONGSEOK AHN, JUNHYEOK AHN, KISEOK LEE, MYEONG-DONG LEE, YOONYOUNG CHOI
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Patent number: 11468919Abstract: A semiconductor device is provided. The semiconductor device includes a substrate a bit line structure disposed on the substrate, a trench adjacent to at least one side of the bit line structure, a storage contact structure disposed within the trench, and comprising a storage contact, a silicide layer, and a storage pad which are stacked sequentially. A spacer structure is disposed between the bit line structure and the storage contact structure.Type: GrantFiled: April 7, 2020Date of Patent: October 11, 2022Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Tae Jin Park, Won Seok Yoo, Keun Nam Kim, Hyo-Sub Kim, So Hyun Park, In Kyoung Heo, Yoo Sang Hwang
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Patent number: 11404538Abstract: A semiconductor memory device includes; a first impurity region and a second impurity region spaced apart in a substrate, a device isolation pattern between the first impurity region and the second impurity region, a bit-line contact on the first impurity region, a storage node contact on the second impurity region and a dielectric pattern between the bit-line contact and the storage node contact. An upper part of a sidewall of the device isolation pattern has a first slope and a lower part of the sidewall of the device isolation pattern has a second slope different from the first slope.Type: GrantFiled: August 18, 2020Date of Patent: August 2, 2022Assignee: Samsung Electronics Co., Ltd.Inventors: Taejin Park, Chulkwon Park, Soyeong Kim, Eun A Kim, Hyo-Sub Kim, Sohyun Park, Sunghee Han, Yoosang Hwang
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Patent number: 11282841Abstract: A semiconductor device includes a substrate, a first impurity implantation region and a second impurity implantation region on the substrate and spaced apart from each other, a storage node contact in contact with the first impurity implantation region, the storage node contact including an upper contact having a first width, and a lower contact having a second width that is greater than the first width at a lower portion of the upper contact, a bit line electrically connected to the second impurity implantation region and configured to cross the substrate, a bit line node contact between the bit line and the second impurity implantation region, and a spacer between the storage node contact and the bit line and between the storage node contact and the bit line node contact.Type: GrantFiled: September 30, 2020Date of Patent: March 22, 2022Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Hyo Sub Kim, Hui Jung Kim, Myeong Dong Lee, Jin Hwan Chun
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Publication number: 20210296237Abstract: A semiconductor memory device is disclosed. The device may include first and second impurity regions provided in a substrate and spaced apart from each other, the second impurity region having a top surface higher than the first impurity region, a device isolation pattern interposed between the first and second impurity regions, a first contact plug, which is in contact with the first impurity region and has a bottom surface lower than the top surface of the second impurity region, a gap-fill insulating pattern interposed between the first contact plug and the second impurity region, a first protection spacer interposed between the gap-fill insulating pattern and the second impurity region, and a first spacer, which is in contact with a side surface of the first contact plug and the device isolation pattern and is interposed between the first protection spacer and the gap-fill insulating pattern.Type: ApplicationFiled: November 13, 2020Publication date: September 23, 2021Applicant: Samsung Electronics Co., Ltd.Inventors: HYO-SUB KIM, SOHYUN PARK, DAEWON KIM, DONGOH KIM, EUN A KIM, CHULKWON PARK, TAEJIN PARK, KISEOK LEE, SUNGHEE HAN
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Publication number: 20210296321Abstract: A semiconductor memory device includes; a first impurity region and a second impurity region spaced apart in a semiconductor substrate, a bit line electrically connected to the first impurity region, a storage node contact electrically connected to the second impurity region, an air gap between the bit line and the storage node contact, a landing pad electrically connected to the storage node contact, a buried dielectric pattern on a sidewall of the landing pad and on the air gap, and a spacer capping pattern between the buried dielectric pattern and the air gap.Type: ApplicationFiled: March 16, 2021Publication date: September 23, 2021Inventors: INKYOUNG HEO, HYO-SUB KIM, SOHYUN PARK, TAEJIN PARK, SEUNG-HEON LEE, YOUN-SEOK CHOI, SUNGHEE HAN, YOOSANG HWANG
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Publication number: 20210273048Abstract: A semiconductor memory device includes; a first impurity region and a second impurity region spaced apart in a substrate, a device isolation pattern between the first impurity region and the second impurity region, a bit-line contact on the first impurity region, a storage node contact on the second impurity region and a dielectric pattern between the bit-line contact and the storage node contact. An upper part of a sidewall of the device isolation pattern has a first slope and a lower part of the sidewall of the device isolation pattern has a second slope different from the first slope.Type: ApplicationFiled: August 18, 2020Publication date: September 2, 2021Inventors: TAEJIN PARK, CHULKWON PARK, SOYEONG KIM, EUN A KIM, HYO-SUB KIM, SOHYUN PARK, SUNGHEE HAN, YOOSANG HWANG
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Publication number: 20210035613Abstract: A semiconductor device is provided. The semiconductor device includes a substrate a bit line structure disposed on the substrate, a trench adjacent to at least one side of the bit line structure, a storage contact structure disposed within the trench, and comprising a storage contact, a silicide layer, and a storage pad which are stacked sequentially. A spacer structure is disposed between the bit line structure and the storage contact structure.Type: ApplicationFiled: April 7, 2020Publication date: February 4, 2021Inventors: Tae Jin PARK, Won Seok Yoo, Keun Nam Kim, Hyo-Sub Kim, So Hyun Park, In Kyoung Heo, Yoo Sang Hwang
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Publication number: 20210013212Abstract: A semiconductor device includes a substrate, a first impurity implantation region and a second impurity implantation region on the substrate and spaced apart from each other, a storage node contact in contact with the first impurity implantation region, the storage node contact including an upper contact having a first width, and a lower contact having a second width that is greater than the first width at a lower portion of the upper contact, a bit line electrically connected to the second impurity implantation region and configured to cross the substrate, a bit line node contact between the bit line and the second impurity implantation region, and a spacer between the storage node contact and the bit line and between the storage node contact and the bit line node contact.Type: ApplicationFiled: September 30, 2020Publication date: January 14, 2021Inventors: Hyo Sub KIM, Hui Jung KIM, Myeong Dong LEE, Jin Hwan CHUN
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Patent number: 10825819Abstract: A semiconductor device includes a substrate, a first impurity implantation region and a second impurity implantation region on the substrate and spaced apart from each other, a storage node contact in contact with the first impurity implantation region, the storage node contact including an upper contact having a first width, and a lower contact having a second width that is greater than the first width at a lower portion of the upper contact, a bit line electrically connected to the second impurity implantation region and configured to cross the substrate, a bit line node contact between the bit line and the second impurity implantation region, and a spacer between the storage node contact and the bit line and between the storage node contact and the bit line node contact.Type: GrantFiled: June 11, 2019Date of Patent: November 3, 2020Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Hyo Sub Kim, Hui Jung Kim, Myeong Dong Lee, Jin Hwan Chun
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Patent number: 10714262Abstract: A multilayer capacitor includes: a body including dielectric layers and internal electrodes alternately disposed therein; and external electrodes disposed on the body and connected to the internal electrodes, respectively. Each of the internal electrodes includes a Ni grain, ceramics distributed in the Ni grain, a first coating layer surrounding the Ni grain, and second coating layers surrounding the ceramics.Type: GrantFiled: July 31, 2018Date of Patent: July 14, 2020Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.Inventors: Jeong Ryeol Kim, Hyo Sub Kim, Kyung Ryul Lee, Jun Oh Kim, Beom Seock Oh, Jong Han Kim, Kyoung Jin Cha
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Publication number: 20200194439Abstract: A semiconductor device includes a substrate, a first impurity implantation region and a second impurity implantation region on the substrate and spaced apart from each other, a storage node contact in contact with the first impurity implantation region, the storage node contact including an upper contact having a first width, and a lower contact having a second width that is greater than the first width at a lower portion of the upper contact, a bit line electrically connected to the second impurity implantation region and configured to cross the substrate, a bit line node contact between the bit line and the second impurity implantation region, and a spacer between the storage node contact and the bit line and between the storage node contact and the bit line node contact.Type: ApplicationFiled: June 11, 2019Publication date: June 18, 2020Inventors: Hyo Sub KIM, Hui Jung KIM, Myeong Dong LEE, Jin Hwan CHUN