Patents by Inventor Hyo-sug Lee

Hyo-sug Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7456310
    Abstract: Disclosed herein is a cyclic dispersant having a rigid block which has a high affinity for carbon nanotubes, and a flexible block which has a high affinity for a solvent, with a linkage created therebetween. Having a structure that is advantageous with respect to adsorption to carbon nanotubes, the dispersant, even if used in a small amount, can disperse a large amount of carbon nanotubes.
    Type: Grant
    Filed: November 22, 2006
    Date of Patent: November 25, 2008
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kwang Hee Kim, Jae Young Choi, Seon Mi Yoon, Hyuk Soon Choi, Hyo Sug Lee
  • Patent number: 7453097
    Abstract: A nanowire light emitting device and a method of fabricating the same are provided. The nanowire light emitting device includes a first conductive layer on a substrate, a plurality of nanowires on the first conductive layer, each nanowire having a p-type doped portion and an n-type doped portion on both ends, a light emitting layer between the p-type doped portion and n-type doped portion, and a second conductive layer formed on the nanowires. The doped portions are formed by adsorbing molecules around a circumference thereof.
    Type: Grant
    Filed: April 7, 2005
    Date of Patent: November 18, 2008
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Young-gu Jin, Sung-hoon Lee, Hyo-sug Lee, Byoung-lyong Choi, Jong-seob Kim
  • Patent number: 7435996
    Abstract: A nanowire light emitting device and a method of fabricating the same are provided. The nanowire light emitting device includes a first conductive layer formed on a substrate, a plurality of nanowires vertically formed on the first conductive layer, each of the nanowires having an n-type doped portion and a p-type doped portion, a light emitting layer between the n-type doped portion and the p-type doped portion, first and second conductive organic polymers filling a space corresponding to the p-type doped portion and the n-type doped portion, respectively, and a second conductive layer formed on the nanowires. The organic polymers dope the corresponding surface of the nanowires by receiving electrons from the corresponding surface of the nanowires or by providing electrons to the surface of the nanowires.
    Type: Grant
    Filed: April 7, 2005
    Date of Patent: October 14, 2008
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Young-gu Jin, Sung-hoon Lee, Hyo-sug Lee, Byoung-lyong Choi, Jong-seob Kim
  • Publication number: 20080185633
    Abstract: A charge trap memory device according to example embodiments may include a tunnel insulating layer provided on a substrate. A charge trap layer may be provided on the tunnel insulating layer. A blocking insulating layer may be provided on the charge trap layer, wherein the blocking insulating layer may include a lanthanide (e.g., lanthanum). The blocking insulating layer may further include aluminum and oxygen, wherein the ratio of lanthanide to aluminum may be greater than 1 (e.g., about 1.5 to about 2). The charge trap memory device may further include a buffer layer provided between the charge trap layer and the blocking insulating layer, and a gate electrode provided on the blocking insulating layer.
    Type: Application
    Filed: February 1, 2008
    Publication date: August 7, 2008
    Inventors: Sang-moo Choi, Hyo-sug Lee, Kwang-soo Seol, Sang-jin Park, Eun-ha Lee
  • Publication number: 20080173859
    Abstract: A storage node, phase change memory device having a storage node, a method of fabricating the phase change memory device and a method of operating the phase change memory device are provided. The phase change memory device includes a switching device and a storage node connecting to the switching device. The storage node includes a bottom electrode, a phase change layer formed on the bottom electrode, a material layer formed on the phase change layer and a top electrode formed on the phase change layer around the material layer.
    Type: Application
    Filed: December 17, 2007
    Publication date: July 24, 2008
    Inventors: Ji-hyun Hur, Yoon-ho Khang, Hyo-sug Lee, Hyuk-soon Choi, Jai-kwang Shin, Jae-joon Oh
  • Publication number: 20080173860
    Abstract: Provided are a phase change memory device and a method of fabricating the same. The phase change memory device including a phase change layer in a storage node thereof includes: a bottom electrode; a bottom electrode contact layer formed of a phase change material disposed on the bottom electrode; a first phase change layer having a smaller width than the bottom electrode contact layer, disposed on the bottom electrode contact layer; a second phase change layer having a larger width than the first phase change layer, disposed on the first phase change layer; and a upper electrode disposed on the second phase change layer.
    Type: Application
    Filed: January 4, 2008
    Publication date: July 24, 2008
    Inventors: Woong-chul Shin, Ki-joon Kim, Ji-hyun Hur, Hyo-sug Lee
  • Publication number: 20080173861
    Abstract: A phase change memory device includes a switching device and a storage node connected to the switching device. The storage node includes a bottom stack, a phase change layer disposed on the bottom stack and a top stack disposed on the phase change layer. The phase change layer includes a unit for increasing a path of current flowing through the phase change layer and reducing a volume of a phase change memory region. The area of a surface of the unit disposed opposite to the bottom stack is greater than or equal to the area of a surface of the bottom stack in contact with the phase change layer.
    Type: Application
    Filed: December 14, 2007
    Publication date: July 24, 2008
    Inventors: Hyuk-soon Choi, Ji-hyun Hur, Yoon-ho Kang, Hyo-sug Lee, Jai-kwang Shin, Jae-joon Oh
  • Patent number: 7358524
    Abstract: A nanowire device having a structure allowing for formation of p-type and n-type doped portions in a nanowire, and a method of fabricating the same. The nanowire device includes a substrate, a first electrode layer formed on the substrate, a second electrode layer facing the first electrode layer, a plurality of nanowires interposed at a predetermined interval between the first electrode layer and the second electrode layer to connect the same, and an electrolyte containing an electrolytic salt filling spaces between the nanowires.
    Type: Grant
    Filed: April 19, 2006
    Date of Patent: April 15, 2008
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hyo-sug Lee, Sung-hoon Lee, Young-gu Jin, Jong-seob Kim, Sung-il Park
  • Publication number: 20070235796
    Abstract: A p-type doped nanowire and a method of fabricating the same. The nanowire has a p-type doped portion which is formed by chemically binding a radical having a half-occupied outermost orbital shell to the corresponding portion of the nanowire, which corresponding portion of the nanowire donates an electron to the radical to thereby form the p-type doped portion.
    Type: Application
    Filed: September 13, 2005
    Publication date: October 11, 2007
    Inventors: Hyo-sug Lee, Jong-seob Kim, Noe-jung Park, Sung-hoon Lee, Young-gu Jin
  • Publication number: 20070235738
    Abstract: A nanowire light emitting device and method of fabricating the same. The nanowire light emitting device includes: a substrate; a first electrode layer formed on the substrate; a plurality of nanowires vertically formed on the first electrode layer, the nanowire having a p-type doped portion and an n-type doped portion formed separately from each other on both sides thereof; a light emitting layer formed between the p-type doped portion and the n-type doped portion; and a second electrode layer formed on the nanowires, wherein the p-type doped portion is formed by chemically binding a radical having an only half-occupied outermost orbital shell to a corresponding surface of the respective nanowires so as to donate an electron to the radical.
    Type: Application
    Filed: September 13, 2005
    Publication date: October 11, 2007
    Inventors: Young-gu Jin, Hyo-sug Lee, Sung-hoon Lee
  • Publication number: 20070221913
    Abstract: Disclosed herein are an aromatic imide-based dispersant for CNTs and a carbon nanotube composition comprising the same. Having an aromatic ring structure advantageously realizing adsorption on carbon nanotubes, the dispersant, even if used in a small amount, can disperse a large quantity of carbon nanotubes.
    Type: Application
    Filed: November 21, 2006
    Publication date: September 27, 2007
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hyo Sug LEE, Jae Young CHOI, Seon Mi YOON, Hyuk Soon CHOI, Kwang Hee KIM
  • Publication number: 20070190240
    Abstract: A method of forming a nano-particle array by convective assembly and a convective assembly apparatus for the same are provided. The method of forming nano-particle array comprises: coating a plurality of nano-particles by forming a coating layer; performing a first convective assembly by moving a first substrate facing, in parallel to and spaced apart from a second substrate at a desired distance such that a colloidal solution including the coated nano-particles is between the first and second substrate; and performing a second convective assembly for evaporating a solvent by locally heating a surface of the colloidal solution drawn when the first substrate is moved in parallel relative to the second substrate. The present invention provides the method of forming the nano-particle array where nano-particles having a particle size from a few to several tens of nanometers are uniformly arrayed on a large area substrate at a low cost, and the convective assembly apparatus for the same.
    Type: Application
    Filed: December 7, 2006
    Publication date: August 16, 2007
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hyuk-soon CHOI, Hyo-sug LEE, June-mo KOO, Kwang-hee KIM
  • Patent number: 7252908
    Abstract: The present invention relates to an electrolytic solution for a lithium battery and a lithium battery using the same. The organic electrolytic solution includes a lithium salt, a mixed organic solvent comprising a high dielectric constant solvent and a low boiling-point solvent, and an additive. The additive used in the electrolytic solution is a heterocyclic compound of Formula (1): where R1, R2 and R3 may each independently be a C1-C10 linear or branched alkyl group; R4 may be a C1-C10 linear or branched alkylene group; X may be a heterocyclic ring containing N and O whereby a tetraallkyl orthosilicate functional group may be linked to N. The lithium battery using the organic electrolytic solution of the present invention is highly reliable and maintains a constant thickness during a charge/discharge cycle.
    Type: Grant
    Filed: September 27, 2004
    Date of Patent: August 7, 2007
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Hansu Kim, Myung-Dong Cho, Hyo-Sug Lee, Boris A. Trofimov
  • Patent number: 7217480
    Abstract: An organic electrolytic solution includes a lithium salt and an organic solvent containing a phosphonate compound, and a lithium battery utilizes the organic electrolytic solution. When using the organic electrolyte containing the phosphonate compound to manufacture a lithium secondary battery, the lithium secondary battery has improved stability to reduction-induced decomposition, reduced first cycle irreversible capacity, and improved charging/discharging efficiency and lifespan. In addition, the lithium secondary battery does not swell beyond a predetermined thickness range after formation and standard charging at room temperature and has improved reliability. Even when the lithium secondary battery swells seriously at a high temperature, its capacity is high enough for practical applications. The capacity of the lithium secondary battery may substantially be recovered after being left at a high temperature.
    Type: Grant
    Filed: January 12, 2004
    Date of Patent: May 15, 2007
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Jae-il Han, Hyo-sug Lee, Han-soo Kim
  • Publication number: 20070032076
    Abstract: A nanowire device having a structure allowing for formation of p-type and n-type doped portions in a nanowire, and a method of fabricating the same. The nanowire device includes a substrate, a first electrode layer formed on the substrate, a second electrode layer facing the first electrode layer, a plurality of nanowires interposed at a predetermined interval between the first electrode layer and the second electrode layer to connect the same, and an electrolyte containing an electrolytic salt filling spaces between the nanowires.
    Type: Application
    Filed: April 19, 2006
    Publication date: February 8, 2007
    Inventors: Hyo-sug Lee, Sung-hoon Lee, Young-gu Jin, Jong-seob Kim, Sung-il Park
  • Publication number: 20050269576
    Abstract: A light-emitting device that improves the injection efficiency of electrons or holes by providing electrons or holes to an emitting layer using nano size needles, including a first electrode with a first polarity a second electrode with a second polarity opposite to the first polarity an emitting layer interposed between the first electrode and the second electrode to emit light and a plurality of conductive needles inserted in the first electrode and extending toward the emitting layer.
    Type: Application
    Filed: June 6, 2005
    Publication date: December 8, 2005
    Inventors: Noe-jung Park, Sung-hoon Lee, Hyo-sug Lee, Young-gu Jin
  • Publication number: 20050224790
    Abstract: A nanowire light emitting device and a method of fabricating the same are provided. The nanowire light emitting device includes a first conductive layer on a substrate, a plurality of nanowires on the first conductive layer, each nanowire having a p-type doped portion and an n-type doped portion on both ends, a light emitting layer between the p-type doped portion and n-type doped portion, and a second conductive layer formed on the nanowires. The doped portions are formed by adsorbing molecules around a circumference thereof.
    Type: Application
    Filed: April 7, 2005
    Publication date: October 13, 2005
    Inventors: Young-gu Jin, Sung-hoon Lee, Hyo-sug Lee, Byoung-Iyong Choi, Jong-seob Kim
  • Publication number: 20050227391
    Abstract: A nanowire light emitting device and a method of fabricating the same are provided. The nanowire light emitting device includes a first conductive layer formed on a substrate, a plurality of nanowires vertically formed on the first conductive layer, each of the nanowires having an n-type doped portion and a p-type doped portion, a light emitting layer between the n-type doped portion and the p-type doped portion, first and second conductive organic polymers filling a space corresponding to the p-type doped portion and the n-type doped portion, respectively, and a second conductive layer formed on the nanowires. The organic polymers dope the corresponding surface of the nanowires by receiving electrons from the corresponding surface of the nanowires or by providing electrons to the surface of the nanowires.
    Type: Application
    Filed: April 7, 2005
    Publication date: October 13, 2005
    Inventors: Young-gu Jin, Sung-hoon Lee, Hyo-sug Lee, Byoung-lyong Choi, Jong-seob Kim
  • Publication number: 20050224780
    Abstract: A nanowire light emitting device is provided. The nanowire light emitting device includes a substrate, a first conductive layer formed on the substrate, a plurality of nanowires vertically formed on the first conductive layer, each nanowire comprising a p-doped portion and an n-doped portion, a light emitting layer between the p-doped portion and the n-doped portion, a second conductive layer formed on the nanowires, and an insulating polymer in which a light emitting material is embedded, filling a space between the nanowires. The color of light emitted from the light emitting layer varies according to the light emitting material.
    Type: Application
    Filed: April 7, 2005
    Publication date: October 13, 2005
    Inventors: Young-gu Jin, Sung-hoon Lee, Hyo-sug Lee, Byoung-lyong Choi, Jong-seob Kim
  • Publication number: 20050170257
    Abstract: An organic electrolytic solution and a rechargeable lithium battery comprising the same is provided. The organic electrolytic solution contains a lithium salt and an organic solvent mixture. The organic solvent mixture is comprised of a solvent with high permittivity, a solvent with a low boiling point, and a cyclic organic compound having at least an oxy-carbonyl group and having a ring structure of 6 units or more. The organic electrolytic solution helps to increase reduction decomposition stability in the lithium battery using the same. As a result, the irreversible capacity of the lithium battery at a first cycle decreases and charge/discharge efficiency and lifespan of the lithium battery increases. In addition, the battery thickness is maintained within a specific range at room temperature after formation and standard charging, which improves the reliability of the lithium battery.
    Type: Application
    Filed: February 3, 2005
    Publication date: August 4, 2005
    Inventors: Han-Su Kim, Jin-Sung Kim, Myung-Dong Cho, Hyo-Sug Lee, Dong-Min Im