Abstract: A method of cleaning a semiconductor wafer, including the steps of supplying a mixed solution of a dilute hydrofluoric acid solution and hydrogen peroxide solution to a bath; loading the semiconductor wafer into the bath such that the semiconductor wafer is dipped into the mixed solution, and rinsing the semiconductor wafer with the mixed solution; draining the mixed solution and supplying deionized water to the bath, and rinsing the semiconductor wafer with the deionized water; and draining the deionized water and supplying isopropyl alcohol to the bath, and drying the semiconductor wafer with isopropyl alcohol.

Abstract: Disclosed herein is a method of producing 4-fluoroethylene carbonate, in which ethylene carbonate reacts with a mixture of fluorine and nitrogen gases. The method comprises feeding a mixture gas of fluorine gas and nitrogen gas into a reactor having ethylene carbonate charged therein, so as to react the ethylene carbonate with the mixture gas of the fluorine gas and the nitrogen gas. The mixture gas fed in the reactor is regulated to have a desired bubble size while passing through a gas bubble regulating column, in which a packing for a packed column is packed. In the method, EC directly reacts with F2/N2 mixture gas to produce FEC, thus a purification process is simple and it is possible to produce FEC at high conversion efficiency and selectivity.

Abstract: Disclosed is a capacitor for a semiconductor device, comprising: a lower electrode formed over a predetermined lower structure on a semiconductor substrate; an aluminum oxynitride film formed over the lower electrode and having a low leakage current characteristic; a yttrium oxynitride film formed over the aluminum oxynitride film and having a higher dielectric constant than the aluminum oxynitride film; and an upper electrode formed over the yttrium oxynitride film, and a manufacturing method thereof.

Abstract: Disclosed is a method for forming a capacitor of a semiconductor device. An etch stop layer, first oxide layer and second oxide layer are sequentially deposited on an insulating interlayer of a substrate. Contact holes through which portions of the etch stop layer are exposed above plugs of the insulating interlayer are formed. The contact holes are cleaned by a cleaning solution having an etching selectivity which is higher for the first oxide layer than for the second oxide layer, thereby enlarging lower portions of the contact holes. A spacer nitride layer is formed on surfaces of the contact holes and the second oxide layer. Portions of the spacer nitride layers located on the second oxide layer and above the plugs together with portions of the etch stop layer located on the plugs are removed. A double polysilicon layer is formed on the spacer nitride layer segments.