Abstract: An organic light emitting display (OLED) device includes a substrate, a semiconductor element on the substrate, a planarization layer on the semiconductor, and a light emitting structure on the planarization layer. The planarization layer includes a contact hole exposing a portion of the semiconductor and a plurality of grooves surrounding the contact hole. The light emitting structure is electrically connected to the semiconductor element via the contact hole.

Abstract: A light emitting display device includes a substrate and a switching element disposed on the substrate. A pixel electrode is disposed on the substrate and is connected to the switching element. A pixel defining layer is disposed on the pixel electrode. The pixel defining layer defines a pixel area of the substrate. A light emitting layer is disposed on the pixel electrode. A common electrode is disposed on the light emitting layer and the pixel defining layer. A sealing layer is disposed on the common electrode. A first light blocking layer is disposed between the pixel defining layer and the sealing layer.

Abstract: A display device includes a substrate including a display region and non-display region, and at least one pixel disposed in the display region. The at least one pixel includes an emission region that emits a light, a non-emission region that does not emit the light, a light emitting element disposed in the emission region, and a pixel circuit that drives the light emitting element. The display device further includes a passivation layer disposed between the pixel circuit and the light emitting element. The passivation layer covers the pixel circuit and includes a concave pattern disposed in the non-emission region. The display device further includes a power supply line disposed on the passivation layer in the non-emission region and connected to the light emitting element. The power supply line includes an uneven pattern corresponding to the concave pattern.

Abstract: A display device includes a pixel defining layer disposed on a substrate and defining a plurality of openings, a plurality of organic light emitting elements disposed in the openings, a first black matrix disposed on the pixel defining layer, a thin film encapsulation layer disposed on the organic light emitting elements and the first black matrix, a plurality of touch sensor portions disposed on the thin film encapsulation layer and overlapping with the pixel defining layer, a second black matrix disposed on the touch sensor portions, and a polarizing film disposed on the second black matrix.

Abstract: An organic light-emitting display device having reduced color dispersion effects includes a substrate, a first conductive line disposed on the substrate, a second conductive line disposed on the same layer as the first conductive line and insulated from the first conductive line and a pixel electrode disposed on the first and second conductive lines and overlapping the first and second conductive lines. A distance between the first conductive line and the second conductive line is about 0 to 10 ?m.

Abstract: An input sensing unit includes a base including light-transmitting areas and non-light transmitting areas. A light absorbing pattern is provided corresponding to the non-light transmitting areas and is configured to absorb incident light. A sensing electrode overlaps the light absorbing pattern. The light absorbing pattern has an aperture for exposing a light-transmitting area of the light-transmitting areas. A boundary of the aperture and an outer boundary of the light-transmitting area are spaced apart from each other. The input sensing unit has improved viewing angle/luminance ratio and improved characteristics of reflective color.

Abstract: An organic electroluminescence display apparatus includes an insulating layer including a concave portion having a concave first upper surface, a first electrode including a curved electrode portion having a concave second upper surface overlapped with the concave portion, a pixel definition layer including a first opening defined therethrough to expose the second upper surface, an organic layer disposed on the first electrode, a second electrode disposed on the organic layer, and a light blocking layer including a second opening defined therethrough. The second opening has a width smaller than the first opening and overlaps with the first opening.

Abstract: An organic electroluminescence display apparatus includes an insulating layer including a concave portion having a concave first upper surface, a first electrode including a curved electrode portion having a concave second upper surface overlapped with the concave portion, a pixel definition layer including a first opening defined therethrough to expose the second upper surface, an organic layer disposed on the first electrode, a second electrode disposed on the organic layer, and a light blocking layer including a second opening defined therethrough. The second opening has a width smaller than the first opening and overlaps with the first opening.

Abstract: A display apparatus includes a substrate, a patterned layer, a light-shielding layer, a first electrode, a second electrode, an electroluminescent layer (EL), a first insulating layer (FIL), and a color filter (CF). The patterned layer is disposed on the substrate, and includes: first body portions, and a first opening between the first body portions. The light-shielding layer is disposed on the patterned layer, and includes: second body portions, and a second opening between the second body portions. The first electrode is disposed on the substrate, the first and second openings overlap the first electrode. The second electrode overlaps the first electrode. The EL is disposed between the first and second electrodes. The FIL is disposed on the second electrode. The CF is disposed on the FIL. The EL is at least disposed in the first opening, and the FIL and the CF are at least disposed in the second opening.

Abstract: An organic light-emitting display device having reduced color dispersion effects includes a substrate, a first conductive line disposed on the substrate, a second conductive line disposed on the same layer as the first conductive line and insulated from the first conductive line and a pixel electrode disposed on the first and second conductive lines and overlapping the first and second conductive lines. A distance between the first conductive line and the second conductive line is about 0 to 10 ?m.

Abstract: A display device including a substrate, a source electrode and a drain electrode on the substrate, the source electrode and the drain electrode being spaced apart from each other, a first planarization layer on the source electrode and the drain electrode, a second planarization layer on the first planarization layer, and a first electrode on the second planarization layer. A step difference between a top of the first planarization layer and a top of the drain electrode is 100 ? or less.

Abstract: A photoelectric device includes: a semiconductor substrate including monocrystalline silicon and has first and second surfaces that are opposite to each other; a doping unit formed on the first surface of the semiconductor substrate; and an insulating layer that is formed between the doping unit and the second surface of the semiconductor substrate, wherein the doping unit includes: a first semiconductor layer including a first dopant doped in the monocrystalline silicon; and a second semiconductor layer including a second dopant doped in the monocrystalline silicon.

Abstract: A semiconductor device may include a tunnel insulating layer disposed on an active region of a substrate, field insulating patterns disposed in surface portions of the substrate to define the active region, each of the field insulating patterns having an upper recess formed at an upper surface portion thereof, a stacked structure disposed on the tunnel insulating layer, and impurity diffusion regions disposed at surface portions of the active region adjacent to the stacked structure.

Abstract: A semiconductor device may include a tunnel insulating layer disposed on an active region of a substrate, field insulating patterns disposed in surface portions of the substrate to define the active region, each of the field insulating patterns having an upper recess formed at an upper surface portion thereof, a stacked structure disposed on the tunnel insulating layer, and impurity diffusion regions disposed at surface portions of the active region adjacent to the stacked structure.

Abstract: A method of manufacturing a stacked film includes; subjecting a semiconductor substrate to a radical oxidation reaction to form a radical oxide layer on a surface of the semiconductor substrate, annealing the radical oxide layer in a hydrogen atmosphere to convert the radical oxide layer to a first passivation layer, and disposing a second passivation layer on the first passivation layer.

Abstract: A semiconductor device may include a tunnel insulating layer disposed on an active region of a substrate, field insulating patterns disposed in surface portions of the substrate to define the active region, each of the field insulating patterns having an upper recess formed at an upper surface portion thereof, a stacked structure disposed on the tunnel insulating layer, and impurity diffusion regions disposed at surface portions of the active region adjacent to the stacked structure.

Abstract: A method of fabricating a nonvolatile memory device includes forming at least one insulating layer on at least one of a semiconductor substrate and a layer including a semi-conductive material, and performing a plasma process using fluorine on the semiconductor. In some cases, an interface between the insulating layer and the semiconductor substrate includes fluorine.

Abstract: Methods of fabricating semiconductor devices including forming a mask pattern on a semiconductor substrate are provided. The mask pattern defines a first opening that at least partially exposes the semiconductor substrate and includes a pad oxide layer and a nitride layer pattern on the pad oxide layer pattern. The nitride layer has a line width substantially larger than the pad oxide layer pattern. A second opening that is connected to the first opening is formed by at least partially removing a portion of the semiconductor substrate exposed through the first opening. The second opening has a sidewall that has a first inclination angle and at least partially exposing the semiconductor substrate. A trench connected to the second opening is formed by etching a portion of the semiconductor substrate exposed through the second opening using the mask pattern as an etch mask.

Abstract: In a method of manufacturing a memory device, a tunnel insulation layer and a floating gate layer are formed on a semiconductor substrate. A top surface of the floating gate layer is converted into a first nitride layer by a first nitridation treatment process. The first nitride layer is converted into a first oxynitride layer by a radical oxidation process. A lower oxide layer is formed on the first oxynitride layer by an LPCVD process. A second nitride layer and an upper oxide layer are formed on the lower oxide layer. A conductive layer is formed on the upper oxide layer. Thus, a multi-layered dielectric layer including the first oxynitride layer, the lower oxide layer, the second nitride layer, the upper oxide layer and the densified second oxynitride layer may have an increased capacitance without having degenerated leakage current characteristics.