Patents by Inventor Hyoeun KWON

Hyoeun KWON has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12211760
    Abstract: Integrated circuit devices may include a cell transistor and a parameter measuring structure (e.g., a resistance measuring structure). The cell transistor may be on a first surface of a substrate structure, which is opposite a second surface thereof. The parameter measuring structure may include first and second contact structures that extend through the substrate structure. The second surface of the substrate structure may expose respective portions of the first and second contact structures.
    Type: Grant
    Filed: June 10, 2022
    Date of Patent: January 28, 2025
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Byounghak Hong, Wookhyun Kwon, Hyoeun Park, Kangill Seo
  • Publication number: 20210031151
    Abstract: The present invention relates to a method for manufacturing a high-performance thin film composite (TFC) membrane through post-treatment with solvents. In the present invention, Ra, which is a new criterion for activating solvents (difference in Hansen solubility parameter between an activating solvent and a polymer), and boiling points of the activating solvents are suggested, whereby the activating solvent thus selected can be used to implement the performance of reverse osmosis (RO) to nanofiltration (NF) grades, and an activated TFC membrane having anti-scaling effects to inorganic salts and acid resistance with high separation performance can be manufactured.
    Type: Application
    Filed: January 22, 2019
    Publication date: February 4, 2021
    Applicant: Korea University Research and Business Foundation
    Inventors: Jung-hyun LEE, Min Gyu SHIN, Sang Hee PARK, Hyoeun KWON, Soon Jin KWON