Abstract: The present disclosure provides a semiconductor device with a multi-bridge channel field effect transistor. In some embodiments, a semiconductor device includes a substrate, an active pattern that extends in a first horizontal direction on the substrate, a first nanosheet, a second nanosheet, and a gate electrode. The first nanosheet is spaced apart from the active pattern in a vertical direction, and includes a first layer, a second layer disposed on and in contact with the first layer, and a third layer disposed on and in contact with the second layer. The first and third layers include a first material, and the second layer includes a different second material. The second nanosheet is disposed on the first nanosheet and spaced apart from the first nanosheet in the vertical direction. The gate electrode extends in a second horizontal direction on the active pattern and surrounds the first and second nanosheets.