Abstract: A semiconductor device including: a substrate; a via which penetrates the substrate; a via insulating film formed along an inner wall of the via; and a core plug which fills the via, wherein a residual stress of the via insulating film is 60 MPa to ?100 MPa.

Abstract: A semiconductor device including: a substrate; a via which penetrates the substrate; a via insulating film formed along an inner wall of the via; and a core plug which fills the via, wherein a residual stress of the via insulating film is 60 MPa to ?100 MPa.

Abstract: A semiconductor device including: a substrate; a via which penetrates the substrate; a via insulating film formed along an inner wall of the via; and a core plug which fills the via, wherein a residual stress of the via insulating film is 60 MPa to ?100 MPa.

Abstract: The present invention relates to a polypropylene-based resin composition which exhibits mechanical properties such as excellent strength and more improved impact strength, and a molded article comprising the same. The polypropylene-based resin composition comprises: a polypropylene-based resin; and an olefin-based copolymer, and shows two or more elution temperatures at a predetermined temperature range when analyzing the olefin-based copolymer by temperature rising elution fractionation (TREF).

Abstract: A semiconductor device including: a substrate; a via which penetrates the substrate; a via insulating film formed along an inner wall of the via; and a core plug which fills the via, wherein a residual stress of the via insulating film is 60 MPa to ?100 MPa.

Abstract: The present invention relates to a polypropylene-based resin composition which exhibits mechanical properties such as excellent strength and more improved impact strength, and a molded article comprising the same. The polypropylene-based resin composition comprises: a polypropylene-based resin; and an olefin-based copolymer, and shows two or more elution temperatures at a predetermined temperature range when analyzing the olefin-based copolymer by temperature rising elution fractionation (TREF).

Abstract: The present invention provides an olefin-based polymer which satisfies the following conditions of (1) to (4) and is capable of exhibiting improved impact strength without degrading mechanical properties such as tensile strength: (1) density (d): from 0.850 to 0.910 g/cc, (2) melting index (MI, 190° C., 2.16 kg load conditions): from 0.1 to 100 g/10 min, (3) molecular weight distribution (MWD): from 1.5 to 3.0, and (4) two peaks are shown in a temperature range of ?20° C. to 120° C. when taking measurements of temperature rising elution fractionation (TREF), and a relation of T(90)?T(50)?60° C. is satisfied (where T(90) is a temperature at which 90 wt % of the olefin-based polymer is eluted, and T(50) is a temperature at which 50 wt % of the olefin-based polymer is eluted).

Abstract: The present invention provides a polypropylene-based composite material capable of exhibiting excellent strength properties and impact strength properties, particularly, markedly improved impact strength properties at a low temperature without using a separate additive by including (A) polypropylene, and (B) an olefin-based polymer which satisfies the conditions of the following (b1) to (b4): (b1) density (d): from 0.850 to 0.910 g/cc, (b2) melt index (MI, 190° C., 2.16 kg load conditions): from 0.1 g/10 min to 100 g/10 min, (b3) molecular weight distribution (MWD): from 1.5 to 3.0, and (b4) i) two peaks are shown in a temperature range of ?20° C. to 120° C. when taking measurements of temperature rising elution fractionation, and ii) a relation of T(90)?T(50)?60° C. is satisfied (where T(90) is a temperature at which 90 wt % of the olefin-based polymer is eluted, and T(50) is a temperature at which 50 wt % of the olefin-based polymer is eluted).

Abstract: The present invention provides a polypropylene-based composite material capable of exhibiting excellent strength properties and impact strength properties, particularly, markedly improved impact strength properties at a low temperature without using a separate additive by including (A) polypropylene, and (B) an olefin-based polymer which satisfies the conditions of the following (b1) to (b4): (b1) density (d): from 0.850 to 0.910 g/cc, (b2) melt index (MI, 190° C., 2.16 kg load conditions): from 0.1 g/10 min to 100 g/10 min, (b3) molecular weight distribution (MWD): from 1.5 to 3.0, and (b4) i) two peaks are shown in a temperature range of ?20° C. to 120° C. when taking measurements of temperature rising elution fractionation, and ii) a relation of T(90)?T(50)?60° C. is satisfied (where T(90) is a temperature at which 90 wt % of the olefin-based polymer is eluted, and T(50) is a temperature at which 50 wt % of the olefin-based polymer is eluted).

Abstract: The present invention provides an olefin-based polymer which satisfies the following conditions of (1) to (4) and is capable of exhibiting improved impact strength without degrading mechanical properties such as tensile strength: (1) density (d): from 0.850 to 0.910 g/cc, (2) melting index (MI, 190° C., 2.16 kg load conditions): from 0.1 to 100 g/10 min, (3) molecular weight distribution (MWD): from 1.5 to 3.0, and (4) two peaks are shown in a temperature range of ?20° C. to 120° C. when taking measurements of temperature rising elution fractionation (TREF), and a relation of T(90)?T(50)?60° C. is satisfied (where T(90) is a temperature at which 90 wt % of the olefin-based polymer is eluted, and T(50) is a temperature at which 50 wt % of the olefin-based polymer is eluted).

Abstract: The present invention relates to an olefin-based polymer exhibiting a single peak when analyzed by gel permeation chromatography (GPC), and having three elution temperatures Te1, Te2 and Te3 when measuring temperature rising elution fractionation (TREF) at a temperature ranging from ?20° C. to 120° C. Accordingly, the olefin-based polymer having excellent mechanical strength, and in particular, significantly improved impact strength is provided.

Abstract: A first insulating layer is formed on a substrate. An opening is formed in the first insulating layer. A barrier layer is formed on the first insulating layer and conforming to sidewalls of the first insulating layer in the opening, and a conductive layer is formed on the barrier layer. Chemical mechanical polishing is performed to expose the first insulating layer and leave a barrier layer pattern in the opening and a conductive layer pattern on the barrier layer pattern in the opening, wherein a portion of the conductive layer pattern protrudes above an upper surface of the insulating layer and an upper surface of the barrier layer pattern. A second insulating layer is formed on the first insulating layer, the barrier layer pattern and the conductive layer pattern and planarized to expose the conductive layer pattern. A second substrate may be bonded to the exposed conductive layer pattern.

Abstract: Embodiments of the present application relate to an encapsulant film, a method for manufacturing an encapsulant film, an optoelectronic device, and a method for manufacturing an optoelectronic device, and can provide superior adhesive force with a front substrate and a back sheet, and specifically having long-term adhesive and heat resistance properties. Also, the present application can provide the encapsulant which does not have a negative effect on parts, such as optoelectronic elements or wire electrodes encapsulated in the optoelectronic devices, and on a working environment, and which can maintain superior workability and economic feasibility in device manufacturing.

Abstract: An encapsulant film and an optoelectronic device are provided. The encapsulant film having improved thermal resistance, and excellent adhesion, especially, long-term adhesive properties, to a front substrate and a back sheet can be provided. Also, the optoelectronic device capable of maintaining excellent workability and economic feasibility upon manufacture of the device without causing a negative influence on working environments and parts such as optoelectronic elements or wiring electrodes encapsulated by the encapsulant film can be provided.

Abstract: A semiconductor device includes a via structure penetrating through a substrate, a portion of the via structure being exposed over a surface of the substrate, a protection layer pattern structure provided on the surface of the substrate and including a first protection layer pattern and a second protection layer pattern, the first protection layer pattern surrounding a lower sidewall of the exposed portion of the via structure and exposing an upper sidewall of the exposed portion of the via structure, the second protection layer pattern exposing a portion of the top surface of the first protection layer pattern adjacent to the sidewall of the via structure, and a pad structure provided on the via structure and the protection layer pattern structure and covering the top surface of the first protection layer pattern exposed by the second protection layer pattern.

Abstract: The present invention relates to an olefin-based polymer exhibiting a single peak when analyzed by gel permeation chromatography (GPC), and having three elution temperatures Te1, Te2 and Te3 when measuring temperature rising elution fractionation (TREF) at a temperature ranging from ?20° C. to 120° C. Accordingly, the olefin-based polymer having excellent mechanical strength, and in particular, significantly improved impact strength is provided.

Abstract: Provided are a polyolefin resin having two crystallization temperatures, a resin composition including the polyolefin resin, an encapsulant film, a method for manufacturing the encapsulant for an optoelectronic device, and an optoelectronic device, in which the encapsulant having high light transmittance and low haze value can be provided even under the condition of low lamination, and the resin composition including the polyolefin resin can be used for manufacturing various encapsulants for an optoelectronic device, thereby providing excellent adhesive strength with the front substrate and back sheet included in the device, especially, a long-term adhesion property and improved heat resistance.

Abstract: A semiconductor device includes a via structure penetrating through a substrate, a portion of the via structure being exposed over a surface of the substrate, a protection layer pattern structure provided on the surface of the substrate and including a first protection layer pattern and a second protection layer pattern, the first protection layer pattern surrounding a lower sidewall of the exposed portion of the via structure and exposing an upper sidewall of the exposed portion of the via structure, the second protection layer pattern exposing a portion of the top surface of the first protection layer pattern adjacent to the sidewall of the via structure, and a pad structure provided on the via structure and the protection layer pattern structure and covering the top surface of the first protection layer pattern exposed by the second protection layer pattern.

Abstract: A copolymer, a method of manufacturing a copolymer, an encapsulant for optoelectronic devices, and an optoelectronic device are provided. The encapsulant exhibiting excellent adhesion to front substrates and back sheets included in various optoelectronic devices can be provided. Also, the encapsulant capable of maintaining excellent workability and economic feasibility upon manufacture of the device without causing a negative influence on working environments and parts such as optoelectronic elements or wiring electrodes encapsulated in the optoelectronic device can be provided.

Abstract: Semiconductor devices are provided. A semiconductor device includes a substrate, a first conductive structure on the substrate, and a second conductive structure on the first conductive structure. The semiconductor device includes first and second metal-diffusion-blocking layers on respective sidewalls of the first and second conductive structures. The semiconductor device includes an insulating layer between the first and second metal-diffusion-blocking layers. Moreover, the semiconductor device includes a metal-diffusion-shield pattern in the insulating layer and spaced apart from the first conductive structure.