Patents by Inventor Hyon Chol Lim

Hyon Chol Lim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device and method for manufacturing the same
    Patent number: 8138545
    Abstract: A semiconductor device includes: a substrate on and/or over which a first conductive type well is formed; and an LDMOS device that includes a gate electrode and has a drain region formed in the substrate. The LDMOS device includes a trench formed on the substrate, a second conductive type body that is formed on one side of the trench and on the substrate therebeneath, and a first conductive type source region that is formed in the second conductive type body.
    Type: Grant
    Filed: December 11, 2009
    Date of Patent: March 20, 2012
    Assignee: Dongbu HiTek Co., Ltd.
    Inventor: Hyon-Chol Lim
  • Method of manufacturing a bipolar junction transistor
    Patent number: 8093132
    Abstract: A bipolar junction transistor and a method of manufacturing a bipolar junction transistor are disclosed. An exemplary bipolar junction transistor includes a second conductivity type base region in a first conductivity type substrate, step-shaped recesses in the base region, a polysilicon layer doped with a first conductivity type impurity in the step-shaped recesses, and a step-shaped emitter region between the polysilicon layer and the base region.
    Type: Grant
    Filed: December 18, 2009
    Date of Patent: January 10, 2012
    Assignee: Dongbu HiTek Co., Ltd.
    Inventor: Hyon Chol Lim
  • Bipolar Junction Transistor and Method of Manufacturing the Same
    Publication number: 20100163872
    Abstract: A bipolar junction transistor and a method of manufacturing a bipolar junction transistor are disclosed. An exemplary bipolar junction transistor includes a second conductivity type base region in a first conductivity type substrate, step-shaped recesses in the base region, a polysilicon layer doped with a first conductivity type impurity in the step-shaped recesses, and a step-shaped emitter region between the polysilicon layer and the base region.
    Type: Application
    Filed: December 18, 2009
    Publication date: July 1, 2010
    Inventor: Hyon Chol LIM
  • SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20100148251
    Abstract: A semiconductor device includes: a substrate on and/or over which a first conductive type well is formed; and an LDMOS device that includes a gate electrode and has a drain region formed in the substrate. The LDMOS device includes a trench formed on the substrate, a second conductive type body that is formed on one side of the trench and on the substrate therebeneath, and a first conductive type source region that is formed in the second conductive type body.
    Type: Application
    Filed: December 11, 2009
    Publication date: June 17, 2010
    Inventor: Hyon-Chol Lim