Abstract: The present invention relates to a separable cassette for measuring glycated hemoglobin. It is easy to use the separable cassette for measuring glycated hemoglobin of the present invention since a reagent is sequentially leaked during the rotation thereof. In addition, there is no need to shake the reagent beforehand, as the reagent without residual reagent is fully discharged by the rotation. Therefore, the measurement result is accurate because an error between the amount of the reagent used and the amount of sample blood is small.

Abstract: Disclosed is a measurement method for a glycated hemoglobin ratio. According to a measurement method for a glycated hemoglobin ratio of the present invention, reagents are easy and convenient to use because of their sequential leakage during the rotation of a cassette, are all discharged by the rotation with no remaining reagent, and are not mixed with each other. Therefore, measurement results are accurate, with fewer errors in the quantities of used reagents and sample blood.

Abstract: Disclosed is a measurement method for a glycated hemoglobin ratio. According to a measurement method for a glycated hemoglobin ratio of the present invention, reagents are easy and convenient to use because of their sequential leakage during the rotation of a cassette, are all discharged by the rotation with no remaining reagent, and are not mixed with each other. Therefore, measurement results are accurate, with fewer errors in the quantities of used reagents and sample blood.

Abstract: The present invention relates to a separable cassette for measuring glycated hemoglobin. It is easy to use the separable cassette for measuring glycated hemoglobin of the present invention since a reagent is sequentially leaked during the rotation thereof. In addition, there is no need to shake the reagent beforehand, as the reagent without residual reagent is fully discharged by the rotation. Therefore, the measurement result is accurate because an error between the amount of the reagent used and the amount of sample blood is small.

Abstract: According to example embodiments of inventive concepts, method of forming a semiconductor memory devices includes sequentially forming a first mold layer, a first support layer, a second mold layer, and a second support layer on a substrate, forming lower electrodes penetrating the second support layer, the second mold layer, the first support layer, and the first mold layer on the substrate, patterning the second support layer to form a second support pattern including an opening, removing the second mold layer to expose portions of sidewalls of the lower electrodes, and etching the exposed sidewalls of the lower electrodes.

Abstract: A method for measuring glycated hemoglobin includes hemolyzing a blood sample with a hemolysate; reacting the hemolyzed blood sample with bead conjugates in which beads are conjugated with glycated hemoglobin binding materials; measuring the amount of total hemoglobin in the reacted blood sample; isolating normal hemoglobin from the glycated hemoglobin conjugated with the bead conjugates; measuring the amount of glycated hemoglobin isolated from the normal hemoglobin; and determining the percentage of the glycated hemoglobin in the blood sample on the basis of the measured amounts of total hemoglobin and glycated hemoglobin. The isolation of normal hemoglobin is performed by absorbing the normal hemoglobin using an absorption pad that is a porous pad having pores, each of which has a size greater than the size of the normal hemoglobin and smaller than the size of the bead.

Abstract: According to example embodiments of inventive concepts, method of forming a semiconductor memory devices includes sequentially forming a first mold layer, a first support layer, a second mold layer, and a second support layer on a substrate, forming lower electrodes penetrating the second support layer, the second mold layer, the first support layer, and the first mold layer on the substrate, patterning the second support layer to form a second support pattern including an opening, removing the second mold layer to expose portions of sidewalls of the lower electrodes, and etching the exposed sidewalls of the lower electrodes.

Abstract: Provided is a method for measuring glycated hemoglobin. The method includes a hemolysis step of hemolyzing a blood sample with a hemolysate, a reaction step of reacting the hemolyzed blood sample with bead conjugates in which beads are conjugated with glycated hemoglobin binding materials, a first measuring step of measuring the amount of total hemoglobin in blood, an isolation step of isolating normal hemoglobin from the glycated hemoglobin conjugated with the bead conjugates, a second measuring step of measuring the amount of glycated hemoglobin in blood, and a calculation step of calculating the concentration of glycated hemoglobin in the blood sample based on the measured amounts of total hemoglobin and glycated hemoglobin in the blood sample.

Abstract: A method of forming a mask pattern for fabricating a semiconductor device. A first region and a second region, having an intersecting third region, are defined in the semiconductor substrate. An inorganic mask layer is etched in the first region to a predetermined thickness, and etched in the second region to another predetermined thickness. While the inorganic mask layer is etched in the first and second region, an organic mask layer is exposed in the third region. The organic mask layer exposed in the third region is removed to form a mask pattern. Consequently, double exposure is performed using the organic mask layer and the inorganic mask layer, so that a fine feature size that closely follows a desired layout can be formed, damage to the organic mask layer by ashing is prevented, and adhesiveness between the organic mask layer and the inorganic mask layer can be improved.

Abstract: A method of forming a mask pattern for fabricating a semiconductor device. A first region and a second region, having an intersecting third region, are defined in the semiconductor substrate. An inorganic mask layer is etched in the first region to a predetermined thickness, and etched in the second region to another predetermined thickness. While the inorganic mask layer is etched in the first and second region, an organic mask layer is exposed in the third region. The organic mask layer exposed in the third region is removed to form a mask pattern. Consequently, double exposure is performed using the organic mask layer and the inorganic mask layer, so that a fine feature size that closely follows a desired layout can be formed, damage to the organic mask layer by ashing is prevented, and adhesiveness between the organic mask layer and the inorganic mask layer can be improved.

Abstract: A bio cartridge measuring analytes contained in a test sample includes: a first measurement area provided to measure a first analyte contained in the test sample; a second measurement area provided to measure a second analyte contained in the test sample; a separation area provided to separate the first measurement area from the second measurement area; a sample channel shaped in capillary shape between the first and second measurement areas; an air outlet provided to discharge air when the test sample is filled in the first and second measurement areas; and an agitation unit mixing the test sample with a reactive sample in at least one of the first and second measurement areas, in which a reactive sample reacting with the first or second analyte is applied on an inner wall of at least one of the first and second measurement areas.

Abstract: A method of manufacturing a semiconductor device by which a generation of a void is prevented after depositing an interlayer dielectric material. First, a plurality of conductive patterns are formed on a substrate and then, a capping insulation layer is formed on the conductive patterns. The capping insulation layer is treated with plasma, and an interlayer dielectric material is deposited on the plasma treated capping insulation layer. The dependency of the interlayer dielectric on the type of material and form of an underlying layer is reduced to improve a gap-filling characteristic, especially for a gap having a high aspect ratio. An improved gap-filling characteristic is accomplished and the formation of all or substantially all of the voids from forming in a gap is prevented even though an interlayer dielectric is deposited under a conventional deposition conditions.

Abstract: A method of manufacturing a semiconductor device by which a generation of a void is prevented after depositing an interlayer dielectric material. First, a plurality of conductive patterns are formed on a substrate and then, a capping insulation layer is formed on the conductive patterns. The capping insulation layer is treated with plasma, and an interlayer dielectric material is deposited on the plasma treated capping insulation layer. The dependency of the interlayer dielectric on the type of material and form of an underlying layer is reduced to improve a gap-filling characteristic, especially for a gap having a high aspect ratio. An improved gap-filling characteristic is accomplished and the formation of all or substantially all of the voids from forming in a gap is prevented even though an interlayer dielectric is deposited under a conventional deposition conditions.

Abstract: A method and an apparatus for removing particulate contaminant are provided in order to ensure high purity during a tungsten suicide deposition process. The method for removing particulate contaminant in tungsten silicide deposition process using SiH4 as silicon source gas and NF3 as cleaning gas, includes purging a carrier gas line for an SiH4 silicon source gas to remove the contaminant in the chamber and carrier gas line when the carrier gas is supplied with the chamber, and the NF3 cleaning gas is supplied to the chamber to form plasma. After a plasma cleaning, the gas line flowing reaction gas responding to the SiH4 is purged to remove the contaminant in the chamber and the reaction gas line. As a result, any particulate contaminant is removed or remains at a minimum level that has no effect on the tungsten silicide deposition process.