Abstract: Embodiments of the inventive concept provide a method for manufacturing a semiconductor device. The method includes forming a stack structure by alternately and repeatedly stacking insulating layers and sacrificial layers on a substrate, sequentially forming a first lower layer and a first photoresist pattern on the stack structure, etching the first lower layer using the first photoresist pattern as an etch mask to form a first lower pattern. A first part of the stack structure is etched to form a stepwise structure using the first lower pattern as an etch mask. The first lower layer includes a novolac-based organic polymer, and the first photoresist pattern includes a polymer including silicon.

Abstract: A backlight unit, a liquid crystal display (LCD) device, and an electronic device including the same are provided. The backlight unit includes a light guide member having a light receiving edge provided on an outer wall, and a hole spaced apart from light receiving edge; a light source configured to provide light to the light receiving edge; and a reflective member on an inner wall of the hole of the light guide member.

Abstract: A light guide plate includes a main body having a light receiving edge and an opposite side, the opposite side being opposite from the light receiving edge; at least one variant portion having a protruded portion that protrudes from the main body from the opposite side, the at least one variant portion defining a hole vertically passing through the main body; and an optical pattern provided in the at least one variant portion.

Abstract: Embodiments of the inventive concept provide a method for a semiconductor device. The method includes forming a stack structure by alternately and repeatedly stacking insulating layers and sacrificial layers on a substrate, sequentially forming a first lower layer and a first photoresist pattern on the stack structure, etching the first lower layer using the first photoresist pattern as an etch mask to form a first lower pattern. A first part of the stack structure is etched to form a stepwise structure using the first lower pattern as an etch mask. The first lower layer includes a novolac-based organic polymer, and the first photoresist pattern includes a polymer including silicon.

Abstract: Embodiments of the inventive concepts provide a method for manufacturing a three-dimensional semiconductor memory device. The method includes forming a stack structure including insulating layers and sacrificial layers which are alternately and repeatedly stacked on a substrate. A first photoresist pattern is formed on the stack structure. A first part of the stack structure is etched to form a stepwise structure using the first photoresist pattern as an etch mask. The first photoresist pattern includes a copolymer including a plurality of units represented by at least one of the following chemical formulas 1 to 3.

Abstract: A method for fabricating a semiconductor device is provided. In the method, a first hard mask layer is formed on a stepped structure. The first hard mask layer has a level top surface and thickness sufficient to etch the structure. A second hard mask pattern is formed on the first hard mask layer. The first hard mask layer is etched using the second hard mask pattern. Size dispersion of the patterns may be reduced by the first hard mask layer.

Abstract: A method for fabricating a semiconductor device is provided. In the method, a first hard mask layer is formed on a stepped structure. The first hard mask layer has a level top surface and thickness sufficient to etch the structure. A second hard mask pattern is formed on the first hard mask layer. The first hard mask layer is etched using the second hard mask pattern. Size dispersion of the patterns may be reduced by the first hard mask layer.

Abstract: The present invention relates to a lithium secondary battery unit set where a plurality of lithium secondary batteries are stacked, and a lithium secondary battery set including a plurality of lithium secondary battery unit sets. The present invention relates to a lithium secondary battery unit set with a bus bar and a lithium secondary battery set with a bus bar. The lithium secondary battery unit set with a bus bar: accommodates and protects a plurality of lithium secondary batteries comprising a pouch and an electrode tab; facilitates the changes of voltage and capacity as the stacked structure of the lithium secondary batteries becomes free; prevents the flow of overcurrent during charging and discharging; and enables uniform temperature distribution of the stacked batteries.

Abstract: Provided are an exterior member for preventing electric leakage and a vehicle battery pack having the same. In detail, the present invention relates to an exterior member made of a polymer material having a moisture content of 7 wt % or less and electric conductivity of 30 S/cm or less when being left for 30 days under a relative humidity of 80% or more and including input and output terminal units, and a vehicle battery pack having the same.

Abstract: The present invention relates to a lithium secondary battery unit set where a plurality of lithium secondary batteries are stacked, and a lithium secondary battery set including a plurality of lithium secondary battery unit sets. The present invention relates to a lithium secondary battery unit set with a bus bar and a lithium secondary battery set with a bus bar. The lithium secondary battery unit set with a bus bar: accommodates and protects a plurality of lithium secondary batteries comprising a pouch and an electrode tab; facilitates the changes of voltage and capacity as the stacked structure of the lithium secondary batteries becomes free; prevents the flow of overcurrent during charging and discharging; and enables uniform temperature distribution of the stacked batteries.