Patents by Inventor Hyoun-Min Beak

Hyoun-Min Beak has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Image sensor having reduced dark current
    Patent number: 8344431
    Abstract: An image sensor includes a light receiving device, a field effect transistor, a stress layer pattern, and a surface passivation material. The light receiving device is formed in a first region of a substrate. The field effect transistor is formed in a second region of the substrate. The stress layer pattern is formed over the field effect transistor for creating stress therein to improve transistor performance. The surface passivation material is formed on the first region of the substrate for passivating dangling bonds at the surface of the light receiving device.
    Type: Grant
    Filed: April 27, 2011
    Date of Patent: January 1, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hyoun-Min Beak, Tae-Seok Oh, Jong-Won Choi, Su-Young Oh
  • Image Sensor having Reduced Dark Current
    Publication number: 20110260222
    Abstract: An image sensor includes a light receiving device, a field effect transistor, a stress layer pattern, and a surface passivation material. The light receiving device is formed in a first region of a substrate. The field effect transistor is formed in a second region of the substrate. The stress layer pattern is formed over the field effect transistor for creating stress therein to improve transistor performance. The surface passivation material is formed on the first region of the substrate for passivating dangling bonds at the surface of the light receiving device.
    Type: Application
    Filed: April 27, 2011
    Publication date: October 27, 2011
    Inventors: Hyoun-Min Beak, Tae-Seok Oh, Jong-Won Choi, Su-Young Oh
  • Method of fabricating image sensor having reduced dark current
    Patent number: 7955888
    Abstract: An image sensor includes a light receiving device, a field effect transistor, a stress layer pattern, and a surface passivation material. The light receiving device is formed in a first region of a substrate. The field effect transistor is formed in a second region of the substrate. The stress layer pattern is formed over the field effect transistor for creating stress therein to improve transistor performance. The surface passivation material is formed on the first region of the substrate for passivating dangling bonds at the surface of the light receiving device.
    Type: Grant
    Filed: August 29, 2008
    Date of Patent: June 7, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hyoun-Min Beak, Tae-Seok Oh, Jong-Won Choi, Su-Young Oh
  • Image sensor having reduced dark current
    Publication number: 20090057735
    Abstract: An image sensor includes a light receiving device, a field effect transistor, a stress layer pattern, and a surface passivation material. The light receiving device is formed in a first region of a substrate. The field effect transistor is formed in a second region of the substrate. The stress layer pattern is formed over the field effect transistor for creating stress therein to improve transistor performance. The surface passivation material is formed on the first region of the substrate for passivating dangling bonds at the surface of the light receiving device.
    Type: Application
    Filed: August 29, 2008
    Publication date: March 5, 2009
    Inventors: Hyoun-Min Beak, Tae-Seok Oh, Jong-Won Choi, Su-Young Oh