Abstract: A screen display system of construction equipment includes a plurality of cameras configured to generate camera image data, an AVM controller configured to generate an AVM (Around View Monitor) image data based on the camera image data and select at least one of the AVM image data and the camera image data as a first image data based on a first failure flag, an additional information synthesizer configured to output second image data based on the first image data, and a main display configured to display an image corresponding to one of the first image data and the second image date based on a second failure flag representing whether or not a failure occurs in the additional information synthesizer.

Abstract: A screen display system of construction equipment includes a plurality of cameras configured to generate camera image data, an AVM controller configured to generate an AVM (Around View Monitor) image data based on the camera image data and select at least one of the AVM image data and the camera image data as a first image data based on a first failure flag, an additional information synthesizer configured to output second image data based on the first image data, and a main display configured to display an image corresponding to one of the first image data and the second image date based on a second failure flag representing whether or not a failure occurs in the additional information synthesizer.

Abstract: A nitride-based semiconductor LED comprises a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined region of the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the active layer; a current spreading layer formed on the p-type nitride semiconductor layer; a p-electrode formed on the current spreading layer, the p-electrode having two p-type branch electrodes; and an n-electrode formed on the n-type nitride semiconductor layer on which the active layer is not formed, the n-electrode having one n-type branch electrode. The n-type branch electrode is formed so as to be inserted between two of the p-type branch electrodes, and a distance from the outermost side of a transparent electrode adjacent to the n-electrode to the p-electrode is identical at any position.

Abstract: A nitride-based semiconductor LED which is flip-chip bonded on a lead pattern of a sub-mount through a bump ball comprises a substrate; a light-emitting structure formed on the substrate; an electrode formed on the light-emitting structure; a protective film formed on the resulting structure having the electrode formed therein, the protective film exposing the electrode surface corresponding to a portion which is connected to the lead pattern of the sub-mount through the bump ball; and a grid-shaped buffer film formed on the electrode surface exposed through the protective film.

Abstract: A nitride-based semiconductor LED includes a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer and a p-type nitride semiconductor layer that are sequentially formed on a predetermined region of the n-type nitride semiconductor layer; a transparent electrode formed on the p-type nitride semiconductor layer; a p-electrode pad formed on the transparent electrode, the p-electrode pad being spaced from the outer edge line of the p-type nitride semiconductor layer by 50 to 200 ?m; and an n-electrode pad formed on the n-type nitride semiconductor layer.

Abstract: The present invention relates to a nitride semiconductor light emitting device having a rectangular top view in which n-electrode and p-electrode structure is appropriately formed to improve propagation of currents and enhance luminance. The light emitting device includes an n-type nitride semiconductor layer formed on a substrate, and an n-electrode including an n-side bonding pad and a finger-type n-electrode extending away from the n-side bonding pad. The device further includes a mesa structure including an active layer and a p-type nitride semiconductor layer deposited in their order, an ohmic contact layer formed on a substantially entire upper surface of the mesa structure, and a p-electrode including a p-side bonding pad and a finger-type p-electrode extending away from the p-side bonding pad.

Abstract: Disclosed herein is a submount to mount a light emitting diode in a flipchip-structured light emitting device. The submount including a transistor to mount a nitride semiconductor light emitting diode in a flipchip-structured light emitting device includes: a substrate made of a first conductive semiconductor material; a first region formed on a partial area of the substrate, and made of a second conductive semiconductor material; a second region formed on the remaining regions other than the first region, and made of the second conductive semiconductor material; first and second electrodes formed on the first and second regions, respectively; and a conductive layer formed on the back of the substrate, wherein the first and second electrodes are connected to an n-type electrode and a p-type electrode of the nitride semiconductor light emitting diode through the use of a bump.

Abstract: A gallium nitride-based light emitting device, and a method for manufacturing the same are provided. The light emitting device comprises a substrate; a main GaN-based LED including a first p-side electrode and a first n-side electrode, the main GaN-based LED formed in a first region on the substrate; and an ESD protecting GaN-based LED including a second p-side electrode and a second n-side electrode, the ESD protecting GaN-based LED formed in a second region on the substrate. The first region is separated from the second region by a device isolation region. The first p-side and n-side electrodes are electrically connected to the second n-side and p-side electrodes, respectively.

Abstract: Disclosed herein is a submount to mount a light emitting diode in a flipchip-structured light emitting device. The submount including a transistor to mount a nitride semiconductor light emitting diode in a flipchip-structured light emitting device includes: a substrate made of a first conductive semiconductor material; a first region formed on a partial area of the substrate, and made of a second conductive semiconductor material; a second region formed on the remaining regions other than the first region, and made of the second conductive semiconductor material; first and second electrodes formed on the first and second regions, respectively; and a conductive layer formed on the back of the substrate, wherein the first and second electrodes are connected to an n-type electrode and a p-type electrode of the nitride semiconductor light emitting diode through the use of a bump.

Abstract: Disclosed are methods using neutral red to mediate the interconversion of chemical and electrical energy. Electrically reduced neutral red has been found to promote cell growth and formation of reduced products by reversibly increasing the ratio of the reduced:oxidized forms of NAD(H) or NADP(H). Electrically reduced neutral red is able to serve as the sole source of reducing power for microbial cell growth. Neutral red is also able to promote conversion of chemical energy to electrical energy by facilitating the transfer of electrons from microbial reducing power to a fuel cell cathode.

Abstract: The present invention relates to an LED, in which an n-doped semiconductor layer, an active layer, a p-doped semiconductor layer and a p-electrode are formed in their order on a sapphire substrate. A high reflectivity material layer containing Cu and Si is deposited on a remaining partial region of the n-doped semiconductor layer. An n-electrode is formed on the high reflectivity material layer. The high reflectivity material layer formed between the n-electrode and the partial region of the underlying n-doped semiconductor layer can reflect light toward a substrate, thereby improving the luminous efficiency of the LED.

Abstract: The present invention provides a gallium nitride based semiconductor light emitting diode having high transparency, and at the same time, capable of improving contact resistance between a p-type GaN layer and electrode and a process for preparing the same. These objects can be accomplished by forming, on an upper part of a upper clad layer made of p-GaN, an ohmic contact forming layer using MIO, ZIO and CIO (In2O3 including one of Mg, Zn and Cu), and then a transparent electrode layer and a second electrode with ITO thereon, so as to improve contact resistance between the upper clad layer and the second electrode while providing high transparency.

Abstract: Disclosed herein are a flip chip type nitride semiconductor light emitting device, which comprises a substrate for growing a nitride semiconductor material, an n-type nitride semiconductor layer formed on the substrate, an active layer formed on at least a part of the n-type nitride semiconductor layer, a p-type nitride semiconductor layer formed on the active layer, a bonding force providing layer formed on the p-type nitride semiconductor layer and adapted to provide a bonding force relative to the p-type nitride semiconductor layer, a reflective electrode layer formed on the bonding force providing layer, and adapted to reflect light produced in the active layer toward the substrate and to diffuse electric current, and a cap layer formed on the reflective electrode layer, and adapted to provide a bonding force between the reflective electrode layer and a bonding metal and to reduce contact resistance.

Abstract: A blowing fan includes: a hub connected to a rotational shaft of a motor and receiving a driving force of the motor; and a plurality of blades connected at equal intervals in a circumferential direction of the hub and generating a blowing force, in which a connection between the blades and the hub has an area-reduced form in order to reduce a rigidity of the connection portion. The rigidity between a hub where a rotational shaft is fixed and a blade is weakened to lower a torsional resonant frequency of the rotational shaft. Thus, a noise of a refrigerator is considerably reduced.

Abstract: An apparatus for fabricating semiconductor devices includes a spin chuck configured for mounting a wafer thereon and operative to rotate the wafer. A nozzle is arranged above the spin chuck, through which a solution is supplied to a surface of the wafer mounted on the spin chuck. A bowl surrounds the spin chuck to prevent the solution from reaching an inner wall of a process chamber. A cover is spaced apart from and confronts the spin chuck having the wafer mounted thereon. The cover has an opening through which a distal end of the nozzle passes so as to spray the solution onto the wafer surface while the cover is disposed over the wafer surface. The cover prevents any solution reflected back from the bowl from reaching the wafer surface.