Patents by Inventor Hyoung-Chan Ha

Hyoung-Chan Ha has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHOD FOR DEPOSITING AN AMORPHOUS CARBON FILM WITH IMPROVED DENSITY AND STEP COVERAGE
    Publication number: 20080153311
    Abstract: A method for depositing an amorphous carbon layer on a substrate includes the steps of positioning a substrate in a chamber, introducing a hydrocarbon source into the processing chamber, introducing a heavy noble gas into the processing chamber, and generating a plasma in the processing chamber. The heavy noble gas is selected from the group consisting of argon, krypton, xenon, and combinations thereof and the molar flow rate of the noble gas is greater than the molar flow rate of the hydrocarbon source. A post-deposition termination step may be included, wherein the flow of the hydrocarbon source and the noble gas is stopped and a plasma is maintained in the chamber for a period of time to remove particles therefrom.
    Type: Application
    Filed: March 5, 2008
    Publication date: June 26, 2008
    Inventors: Deenesh Padhi, Hyoung-Chan Ha, Sudha Rathi, Derek R. Witty, Chiu Chan, Sohyun Park, Ganesh Balasubramanian, Karthik Janakiraman, Martin Jay Seamons, Visweswaren Sivaramakrishnan, Bok Hoen Kim, Hichem M'Saad
  • Method For Depositing an Amorphous Carbon Film with Improved Density and Step Coverage
    Publication number: 20080003824
    Abstract: A method for depositing an amorphous carbon layer on a substrate includes the steps of positioning a substrate in a chamber, introducing a hydrocarbon source into the processing chamber, introducing a heavy noble gas into the processing chamber, and generating a plasma in the processing chamber. The heavy noble gas is selected from the group consisting of argon, krypton, xenon, and combinations thereof and the molar flow rate of the noble gas is greater than the molar flow rate of the hydrocarbon source. A post-deposition termination step may be included, wherein the flow of the hydrocarbon source and the noble gas is stopped and a plasma is maintained in the chamber for a period of time to remove particles therefrom.
    Type: Application
    Filed: June 28, 2006
    Publication date: January 3, 2008
    Inventors: Deenesh Padhi, Hyoung-Chan Ha, Sudha Rathi, Derek R. Wtty, Chiu Chan, Sohyun Park, Ganesh Balasubramanian, Karthik Janakiraman, Martin Jay Seamons, Visweswaren Sivaramakrishnan, Bok Hoen Kim, Hichem M'Saad
  • Method of titanium and titanium nitride layer deposition
    Publication number: 20030072884
    Abstract: A method of forming a film structure (e.g., film stacks) comprising titanium (Ti) and/or titanium nitride (TiN). The Ti film structure is formed by alternately depositing and then plasma treating thin films (less than about 100 Å thick) of titanium. The TiN film structure is formed by alternately depositing and then plasma treating thin films (less than about 300 Å thick) of titanium nitride. The titanium films are formed using a plasma reaction of titanium tetrachloride (TiCl4) and a hydrogen-containing gas. The titanium nitride films are formed by thermally reacting titanium tetrachloride with a nitrogen-containing gas. The subsequent plasma treatment steps comprise a nitrogen/hydrogen-containing plasma.
    Type: Application
    Filed: October 15, 2001
    Publication date: April 17, 2003
    Applicant: Applied Materials, Inc.
    Inventors: Tong Zhang, Hyoung-Chan Ha, Jeong Soo Byun, Avgerinos Gelatos, Frederick C. Wu