Abstract: A process for fabricating a field emitter electrode includes: impregnating a cathode and anode in an electrolyte containing carbon nanotubes dispersed therein and applying a predetermined voltage to the cathode and anode so as to deposit carbon nanotubes on a substrate provided on the anode; recovering the substrate and applying a conductive polymer onto the surface of the substrate having carbon nanotubes deposited thereon; and heat treating the conductive polymer having carbon nanotubes deposited thereon, so as to completely cure it.

Abstract: The present invention provides a method of manufacturing a field emitter electrode using self-assembling carbon nanotubes as well as a field emitter electrode manufactured thereby. The method comprises anodizing an aluminum substrate to form an anodized aluminum oxide film having a plurality of uniform pores on the aluminum substrate, preparing an electrolyte solution having carbon nanotubes dispersed therein, immersing the anodized aluminum substrate in the electrolyte solution and applying a given voltage to the aluminum substrate as one electrode, so as to attach the carbon nanotubes to the pores, and fixing the attached carbon nanotubes to the pores.

Abstract: A process for fabricating a field emitter electrode includes: impregnating a cathode and anode in an electrolyte containing carbon nanotubes dispersed therein and applying a predetermined voltage to the cathode and anode so as to deposit carbon nanotubes on a substrate provided on the anode; recovering the substrate and applying a conductive polymer onto the surface of the substrate having carbon nanotubes deposited thereon; and heat treating the conductive polymer having carbon nanotubes deposited thereon, so as to completely cure it.

Abstract: The present invention provides a wavelength-convertible LED which has first and second surfaces, including first and second conductivity-type cladding layers and an active layer formed between the first and second conductivity-type cladding layers to emit a specific wavelength light. The invention also includes at least a piezoelectric layer on at least one of the first and second surfaces of the semiconductor LED with its thickness variable according to the applied voltage, and a rigid frame made of substantially non-resilient rigid material surrounding the semiconductor LED and the at least one piezoelectric layer such that the increase of the thickness of the piezoelectric layer is applied to the semiconductor LED as pressure. The invention further includes a plurality of terminals on the rigid frame, connected to the first and second conductivity-type cladding layers, and the piezoelectric layer.