Abstract: Provided are a polishing pad including a porous protrusion pattern, a polishing device including the same, and a manufacturing method of a polishing pad. The polishing pad includes a support layer, and a pattern layer disposed directly on the support layer, the pattern layer comprising a protrusion pattern having a plurality of pores. The pores contribute to an increase in perimeter length of the protrusion pattern in plan view, and a perimeter length of a polishing surface formed by the protrusion pattern per unit area is in a range of 1.0 mm/mm2 to 50.0 mm/mm2.

Abstract: The present invention relates to a chemical mechanical polishing pad having a pattern structure. The configuration of the present invention provides a chemical mechanical polishing pad having a pattern structure including a polishing pad configured to polish a wafer placed thereon; and a plurality of figure units formed on the polishing pad and formed to protrude from an upper portion of the polishing pad. The figure units are formed to have a predetermined contact area ratio and a predetermined circumferential length per unit area which correspond to a target polishing characteristic.

Abstract: A polishing pad, a polishing device including the same, and a method of preparing a polishing pad are provided. The polishing pad includes a support layer, and a pattern layer disposed on one surface of the support layer, and the pattern layer includes a plurality of protrusion patterns spaced apart from each other on the support layer, and has a greater rigidity than a rigidity of the support layer.

Abstract: The present invention provides the device for detecting an island position of an ingot growing furnace, comprising a control means for detecting the position of an island by analyzing the image obtained by the photographing means, wherein the control means derives a plurality of singularities with respect to the temperature or brightness from the image, derives a plurality of connection lines respectively forming straight lines by the mutual connection of a series of the singularities, considers an area in which the most intersections are generated as an island among areas in which the plurality of connection lines intersect each other, and determines whether the island is positioned in a seed contact area in which the seed is set to be lowered.

Abstract: A method for treating water using a salt desorption process of gas hydrates according to the present invention includes: (a) introducing water containing impurities and a plurality of guest gases into a reactor; (b) forming gas hydrates by causing the water and the plurality of guest gases to react under a first condition; and (c) dissociating a gas hydrate of one guest gas from among the plurality of guest gases by changing the first condition to a second condition, wherein the first condition refers to temperature and pressure conditions under which all of the plurality of guest gases form gas hydrates and the second condition refers to temperature and pressure conditions under which the gas hydrate of the one guest gas from the mixed gas hydrates is dissociated.

Abstract: Provided is a wire saw (1) that cuts an ingot (I) while swinging the ingot. The wire saw (1) includes a first driving block (100), a second driving block (110), and an ingot holder (120). When the first driving block (100) moves, the second driving block (110) moves in a direction perpendicular to a moving direction of the first driving block (100), and simultaneously the ingot holder (120) is swung. The ingot holder (120) is transferred to a z-axial direction in which the ingot is cut by a lifting block (73), and the lifting block (73) moves independently of the first or second driving block (100 or 1110). Thus, the ingot (I) can be swung separately from the lifting block (73), and be inhibited from moving left and right. Since only the first driving block (100) is controlled, easy control and a simple structure are provided.

Abstract: The present invention provides the device for detecting an island position of an ingot growing furnace, comprising a control means for detecting the position of an island by analyzing the image obtained by the photographing means, wherein the control means derives a plurality of singularities with respect to the temperature or brightness from the image, derives a plurality of connection lines respectively forming straight lines by the mutual connection of a series of the singularities, considers an area in which the most intersections are generated as an island among areas in which the plurality of connection lines intersect each other, and determines whether the island is positioned in a seed contact area in which the seed is set to be lowered.

Abstract: Provided is a wire saw (1) that cuts an ingot (I) while swinging the ingot. The wire saw (1) includes a first driving block (100), a second driving block (110), and an ingot holder (120). When the first driving block (100) moves, the second driving block (110) moves in a direction perpendicular to a moving direction of the first driving block (100), and simultaneously the ingot holder (120) is swung. The ingot holder (120) is transferred to a z-axial direction in which the ingot is cut by a lifting block (73), and the lifting block (73) moves independently of the first or second driving block (100 or 1110). Thus, the ingot (I) can be swung separately from the lifting block (73), and be inhibited from moving left and right. Since only the first driving block (100) is controlled, easy control and a simple structure are provided.

Abstract: A method for treating water using a salt desorption process of gas hydrates according to the present invention includes: (a) introducing water containing impurities and a plurality of guest gases into a reactor; (b) forming gas hydrates by causing the water and the plurality of guest gases to react under a first condition; and (c) dissociating a gas hydrate of one guest gas from among the plurality of guest gases by changing the first condition to a second condition, wherein the first condition refers to temperature and pressure conditions under which all of the plurality of guest gases form gas hydrates and the second condition refers to temperature and pressure conditions under which the gas hydrate of the one guest gas from the mixed gas hydrates is dissociated.

Abstract: Disclosed herein is an apparatus for continuously producing and pelletizing gas hydrates. The apparatus includes a gas supply unit, a water supply unit and a reactor. Gas and water are respectively supplied from the gas supply unit and the water supply unit into the reactor. The gas and water react with each other in the reactor. The reactor includes a dual cylinder unit which forms a gas hydrate in such a way as to squeeze a slurry of reaction water formed by the reaction between the gas and water. The dual cylinder unit includes an upper cylinder, a lower cylinder and a connection pipe which connects the upper cylinder to the lower cylinder. The connection pipe has passing holes through which the reaction water in the reactor flows into and out of the connection pipe.

Abstract: Disclosed herein is an apparatus for continuously producing and pelletizing gas hydrates. The apparatus includes a gas supply unit, a water supply unit and a reactor. Gas and water are respectively supplied from the gas supply unit and the water supply unit into the reactor. The gas and water react with each other in the reactor. The reactor includes a dual cylinder unit which forms a gas hydrate in such a way as to squeeze a slurry of reaction water formed by the reaction between the gas and water. The dual cylinder unit includes an upper cylinder, a lower cylinder and a connection pipe which connects the upper cylinder to the lower cylinder. The connection pipe has passing holes through which the reaction water in the reactor flows into and out of the connection pipe.

Abstract: The present invention relates to a chemical mechanical polishing (CMP) pad with a micro-mold, and a production method thereof. More particularly, the present invention relates to a CMP pad with a micro-mold, in which the surface of the CMP pad is uniformly formed so as to avoid the glazing of the polishing pad, prevent a change in slurry flow and maintain the contact area between the polishing pad and a semiconductor wafer constant, thus allowing the wafer to be polished in a continuous and stable manner, and permitting the semiconductor wafer to be polished into the desired shape, as well as a production method thereof.

Abstract: Disclosed is a thermoplastic polyurethane for slash molding, excellent in moldability, capable of providing a skin material having a uniform thickness, and capable of allowing a minute laser processing or the like to be vehicleried out thereon. Also, the present invention discloses a skin material comprising the thermoplastic polyurethane. The thermoplastic polyurethane of the present invention is prepared in a form of a powdery resin by mixing and then condensing an amount of 15-60 parts by weight of one or more isocyanate compounds; an amount of 30-70 parts by weight of an ether-containing polyester polyol; and an amount of 5-40 parts by weight of one or more chain extenders.