Abstract: The present invention relates to a device for regenerating nerve cells and suppressing immune diseases, and more particularly, to a device for regenerating nerve cells and suppressing immune diseases, which uses a contact lens containing a conductive material to increase the effect of microcurrent on nerve cell regeneration and immune response suppression. The device for regenerating nerve cells and suppressing immune diseases comprises: a contact lens comprising a body configured to be worn on a cornea, and a conductive material inserted into the body and serving to induce a microcurrent generated outside the body; a plurality of channels configured to come into close contact with skins around eyes and to generate a flow of microcurrent on upper part of the contact lens; and a signal supply unit configured to supply electrical signals to the plurality of channels.

Abstract: A computer-readable storage medium stores instructions for execution by one or more processors of a UE. The instructions configure the UE for small data transmission (SDT) in a 5G NR network and cause the UE to perform operations comprising detecting while in an RRC_Inactive state, a radio link failure during a first SDT of UL data to a base station. A secure key for a second SDT is generated based on the radio link failure. A configuration message including an indication of the second SDT is transmitted to the base station. A response message including a UL grant is received from the base station. The UL data is encoded for the second SDT using the secure key. The second SDT is performed using the UL grant while the UE is in the RRC_Inactive state.

Abstract: A semiconductor device, in which a cell array region and an extension region are arranged along a first direction, and in which contact regions and through regions are alternately arranged along the first direction in the extension region, including: a mold structure including a plurality of first insulating patterns and a plurality of gate electrodes, which are alternately stacked on a first substrate; a channel structure penetrating the mold structure in the cell array region to intersect the plurality of gate electrodes; respective gate contacts that are on the mold structure in the contact regions and are connected to each of the gate electrodes; and a plurality of second insulating patterns, the second insulating patterns being stacked alternately with the first insulating patterns in the mold structure in the through regions, the plurality of second insulating patterns including a different material from the plurality of first insulating patterns.

Abstract: A semiconductor device includes: first and second active patterns spaced apart from each other in a third direction; a gate electrode covering the first and second active patterns and extending in a second direction; a first source/drain region disposed on opposing sides of the gate electrode and connected to the first active pattern; a second source/drain region disposed on opposing sides of the gate electrode and connected to the second active pattern; a plurality of first upper metal lines extending in a first direction on the second active pattern and spaced apart from each other in the second direction; and a lower metal line extending in the first direction on the first active pattern, wherein the first direction, the second direction and the third direction intersect each other.

Abstract: Disclosed is a method of manufacturing a cathode for a solid oxide fuel cell (SOFC) including preparing an electrode composition containing urea, ultrasonically spraying the electrode composition onto a GDC scaffold, and drying the scaffold. By using urea, calcination (?700° C.) after each infiltration cycle can be omitted, the next infiltration cycle is performed immediately after the drying (?100° C.), and thus the cathode manufacturing process time can be greatly reduced. Disclosed is also a solid oxide fuel cell including an anode support, an anode functional layer disposed on the anode support, an electrolyte disposed on the anode functional layer, and a cathode disposed on the electrolyte, wherein the cathode is formed by ultrasonic spraying using an electrode composition containing urea.

Abstract: A voltage drop compensation system and a display driving device for compensating for a voltage drop of a display panel. The voltage drop compensation system generates a voltage drop compensation value for each of a plurality of regions into which a test image of a panel is divided, and the display driving device compensates for a voltage drop for each region of image data using the voltage drop compensation value.

Abstract: A voltage drop compensation system and a display driving device for compensating for a voltage drop of a display panel. The voltage drop compensation system generates a voltage drop compensation value for each of a plurality of regions into which a test image of a panel is divided, and the display driving device compensates for a voltage drop for each region of image data using the voltage drop compensation value.

Abstract: Disclosed is a method for manufacturing a large-area thin-film solid oxide fuel cell, the method including: preparing an anode support slurry, an anode functional layer slurry, an electrolyte slurry, and a buffer layer slurry for tape casting; preparing an anode support green film, an anode functional layer green film, an electrolyte green film, and a buffer layer green film by tape casting the slurries onto carrier films; staking the green films, followed by hot press and warm iso-static press (WIP), to prepare a laminated body; and co-sintering the laminated body.

Abstract: A voltage drop compensation system and a display driving device for compensating for a voltage drop of a display panel. The voltage drop compensation system generates a voltage drop compensation value for each of a plurality of regions into which a test image of a panel is divided, and the display driving device compensates for a voltage drop for each region of image data using the voltage drop compensation value.

Abstract: A massage module according to an embodiment includes: a support plate including a circular opening therein; a massage body provided in the circular opening of the support plate; and a rotating mechanism for rotating the massage body relative to the support plate, wherein the massage body includes: a massage unit which provides a massage to a user through mechanical stimulation; a rotating plate provided to be rotatably moved relative to the support plate by the rotating mechanism; and a moving mechanism provided in the rotating plate to move the massage unit in a direction perpendicular to the rotation plane of the rotating plate. The rotating plate includes a through-opening through which the moving mechanism can pass, and the moving mechanism can pass through the through-opening to move the massage unit between a first position and a second position.

Abstract: Provided is an interconnect for a solid oxide fuel cell including ferritic stainless steel dispersed with nano-CeO2 and Nb2O5. The interconnect for the solid oxide fuel cell of the present disclosure includes nano-CeO2 and Nb2O5 having specific particle sizes in specific contents, thereby suppressing the formation of the insulating layer SiO2 and exhibiting an excellent improvement effect of high-temperature characteristics such as oxidation resistance and sheet resistance.

Abstract: Disclosed is a method for manufacturing a large-area thin-film solid oxide fuel cell, the method including: preparing an anode support slurry, an anode functional layer slurry, an electrolyte slurry, and a buffer layer slurry for tape casting; preparing an anode support green film, an anode functional layer green film, an electrolyte green film, and a buffer layer green film by tape casting the slurries onto carrier films; staking the green films, followed by hot press and warm iso-static press (WIP), to prepare a laminated body; and co-sintering the laminated body.

Abstract: An immersed hollow fiber membrane module according to an embodiment of the present disclosure includes a hollow fiber membrane bundle formed by fixing a plurality of hollow fiber membranes by a potting agent, and a module supporting unit provided at one side of the hollow fiber membrane bundle to support the hollow fiber membrane bundle, the module supporting unit having an air cleaning time delaying portion configured to delay or intermittently maintain an air cleaning time for air introduced therein and discharged out.

Abstract: An immersed hollow fiber membrane module according to an embodiment of the present disclosure includes a hollow fiber membrane bundle formed by fixing a plurality of hollow fiber membranes by a potting agent, and a module supporting unit provided at one side of the hollow fiber membrane bundle to support the hollow fiber membrane bundle, the module supporting unit having an air cleaning time delaying portion configured to delay or intermittently maintain an air cleaning time for air introduced therein and discharged out.

Abstract: A method of testing a semiconductor memory device is provided. Data is written to a plurality of memory cells disposed in a memory cell block of the semiconductor memory device. A first driving voltage is applied to a first group of word lines. A second driving voltage is applied to a second group of word lines. Each word line of the first group of the word lines is interposed between two neighboring word lines of the second group of the word lines. The first driving voltage has a voltage level different from that of the second driving voltage. The data is read from first memory cells coupled to the first group to determine whether each of the first memory cells is defective.

Abstract: The present invention relates to a method of methane steam reforming using a nickel/alumina nanocomposite catalyst. More specifically, the present invention relates to a method of carrying out methane steam reforming using a nickel/alumina nanocomposite catalyst wherein nickel metal nanoparticles are uniformly loaded in a high amount on a support via a melt infiltration method with an excellent methane conversion even under a relatively severe reaction condition of a high gas hourly space velocity or low steam supply, and to a catalyst for this method. In addition, the present invention prepares a nickel/silica-alumina hybrid nanocatalyst by mixing the catalyst prepared by the melt infiltration method as the first catalyst and the nickel silica yolk-shell catalyst as the second catalyst, and applies it to the steam reforming of methane to provide a still more excellent catalytic activity even under the higher temperature of 700° C. or more with the excellent methane conversion.

Abstract: A logic semiconductor device includes a plurality of active patterns extending in a horizontal direction and being spaced apart from each other in a vertical direction, an isolation layer defining the active patterns, a plurality of gate patterns extending in the vertical direction on the active patterns and the isolation layer, the gate patterns being spaced apart from each other in the horizontal direction, a plurality of lower wirings extending in the horizontal direction over the gate patterns, a plurality of upper wirings extending in the vertical direction over the lower wirings, a through contact connecting at least one upper wiring of the upper wirings and at least one gate pattern of the gate patterns, the through contact extending from a bottom surface of the upper wiring to a position under a bottom surface of one of the lower wirings relative to the active patterns.

Abstract: Provided are particle size-controlled, chromium oxide particles or composite particles of iron oxide-chromium alloy and chromium oxide; a preparation method thereof; and use thereof, in which the chromium oxide particles or the composite particles of iron oxide-chromium alloy and chromium oxide having a desired particle size are prepared in a simpler and more efficient manner by using porous carbon material particles having a large pore volume as a sacrificial template. When the chromium oxide particles or the composite particles of iron oxide-chromium alloy and chromium oxide thus obtained are applied to gas-phase and liquid-phase catalytic reactions, they are advantageous in terms of diffusion of reactants due to particle uniformity, high-temperature stability may be obtained, and excellent reaction results may be obtained under severe reaction environment.

Abstract: The present invention relates to a coelectrolysis module which can produce synthesis gas from water and carbon dioxide and, more particularly, to a pressure coelectrolysis module having a tube-type cell mounted thereon. The pressure coelectrolysis module according to the present invention comprises a coelectrolysis cell which uses fuel gas consisting of hydrogen, nitrogen, and carbon dioxide; a pressure chamber for pressurizing the coelectrolysis cell; a vaporizer for providing steam to the coelectrolysis cell; and a mass flow controller for providing fuel gas to the coelectrolysis cell, wherein the pressure coelectrolysis module has excellent performance and durability and can improve the production yield of synthesis gas.

Abstract: A logic semiconductor device includes a plurality of active patterns extending in a horizontal direction and being spaced apart from each other in a vertical direction, an isolation layer defining the active patterns, a plurality of gate patterns extending in the vertical direction on the active patterns and the isolation layer, the gate patterns being spaced apart from each other in the horizontal direction, a plurality of lower wirings extending in the horizontal direction over the gate patterns, a plurality of upper wirings extending in the vertical direction over the lower wirings, a through contact connecting at least one upper wiring of the upper wirings and at least one gate pattern of the gate patterns, the through contact extending from a bottom surface of the upper wiring to a position under a bottom surface of one of the lower wirings relative to the active patterns.