Patents by Inventor Hyoung-ryeol In

Hyoung-ryeol In has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11133327
    Abstract: A three-dimensional semiconductor device includes: a common source line passing between a first channel structure and a second channel structure and between a first dummy channel structure and a second dummy channel structure, in which a distance in a first direction between the common source line and the first channel structure is equal to a distance in the first direction between the common source line and the second channel structure, and a distance in the first direction between the common source line and the first dummy channel structure is different from a distance in the first direction between the common source line and the second dummy channel structure.
    Type: Grant
    Filed: April 15, 2019
    Date of Patent: September 28, 2021
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Young-jin Jung, Hyoung-ryeol In, Sung-han Cho
  • Publication number: 20200083250
    Abstract: A three-dimensional semiconductor device includes: a common source line passing between a first channel structure and a second channel structure and between a first dummy channel structure and a second dummy channel structure, in which a distance in a first direction between the common source line and the first channel structure is equal to a distance in the first direction between the common source line and the second channel structure, and a distance in the first direction between the common source line and the first dummy channel structure is different from a distance in the first direction between the common source line and the second dummy channel structure.
    Type: Application
    Filed: April 15, 2019
    Publication date: March 12, 2020
    Inventors: YOUNG-JIN JUNG, Hyoung-ryeol In, Sung-han Cho