Abstract: A method of manufacturing a semiconductor probe having a resistive tip. The method includes forming first and second mask films having a rectangular shape on a silicon substrate, first etching an upper surface of the silicon substrate, forming a third mask film corresponding to a width of a tip neck by etching the first mask film, forming the width of the tip neck to a predetermined width by second etching of the silicon substrate using the third mask film as a mask, and forming a peak forming portion of the tip by annealing the silicon substrate after removing the third mask film. A semiconductor probe having a uniform height and tips having a uniform neck width can be manufactured.

Abstract: The stackable semiconductor chip includes a semiconductor chip having pads on an upper surface thereof, and an adhesive formed on lateral surfaces of the semiconductor chip. A first insulation layer is formed over the upper surface of the semiconductor chip and the adhesive, and defines a plurality of through holes which expose the pads. Metal lines, formed on the first insulation layer, are connected to a respective one of the pads via a respective one of the through holes. A protective layer is formed on the metal lines and the first insulation layer. A plurality of stackable semiconductor chips are stacked by disposing double-sided adhesive between the stackable semiconductor chips. Then a plurality of external terminal pads are formed on one of the lateral surfaces of the stack of stackable semiconductor chips. Each external terminal pad is electrically connected to at least one of the metal lines in one of the stackable semiconductor chips.