Patents by Inventor Hyoung-Suk OH

Hyoung-Suk OH has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11031385
    Abstract: An integrated circuit including a first standard cell including, first transistors, the first transistors being first unfolded transistors, a first metal pin, a second metal pin, and a third metal pin on a first layer, the first metal pin and the second metal pin having a first minimum metal center-to-metal center pitch therebetween less than or equal to 80 nm, a fourth metal pin and a fifth metal pin at a second layer, the fourth metal pin and the fifth metal pin extending in a second direction, the second direction being perpendicular to the first direction, a first via between the first metal pin and the fourth metal pin, and a second via between the third metal pin and the fifth metal pin such that a first via center-to-via center space between the first via and the second via is greater than double the first minimum metal center-to-metal center pitch.
    Type: Grant
    Filed: December 23, 2019
    Date of Patent: June 8, 2021
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jae-Woo Seo, Jin Tae Kim, Tae Joong Song, Hyoung-Suk Oh, Keun Ho Lee, Dal Hee Lee, Sung We Cho
  • Patent number: 10720909
    Abstract: A flip-flop includes an input interface, a first latch, a third inverter, and a second latch. The third inverter and the fifth inverter include first transistors of a first type formed between a first power contact and a second power contact supplied with a power supply voltage on first-type fins, and second transistors of a second type formed between a first ground contact and a second ground contact supplied with a ground voltage on second-type fins.
    Type: Grant
    Filed: July 26, 2019
    Date of Patent: July 21, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Ha-Young Kim, Dalhee Lee, Hyoung-Suk Oh, Keunho Lee, Taejoong Song, Sungwe Cho
  • Publication number: 20200126968
    Abstract: An integrated circuit including a first standard cell including, first transistors, the first transistors being first unfolded transistors, a first metal pin, a second metal pin, and a third metal pin on a first layer, the first metal pin and the second metal pin having a first minimum metal center-to-metal center pitch therebetween less than or equal to 80 nm, a fourth metal pin and a fifth metal pin at a second layer, the fourth metal pin and the fifth metal pin extending in a second direction, the second direction being perpendicular to the first direction, a first via between the first metal pin and the fourth metal pin, and a second via between the third metal pin and the fifth metal pin such that a first via center-to-via center space between the first via and the second via is greater than double the first minimum metal center-to-metal center pitch.
    Type: Application
    Filed: December 23, 2019
    Publication date: April 23, 2020
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Jae-Woo SEO, Jin Tae KIM, Tae Joong SONG, Hyoung-Suk OH, Keun Ho LEE, Dal Hee LEE, Sung We CHO
  • Patent number: 10553574
    Abstract: An integrated circuit including a first standard cell including, first transistors, the first transistors being first unfolded transistors, a first metal pin, a second metal pin, and a third metal pin on a first layer, the first metal pin and the second metal pin having a first minimum metal center-to-metal center pitch therebetween less than or equal to 80 nm, a fourth metal pin and a fifth metal pin at a second layer, the fourth metal pin and the fifth metal pin extending in a second direction, the second direction being perpendicular to the first direction, a first via between the first metal pin and the fourth metal pin, and a second via between the third metal pin and the fifth metal pin such that a first via center-to-via center space between the first via and the second via is greater than double the first minimum metal center-to-metal center pitch.
    Type: Grant
    Filed: October 20, 2016
    Date of Patent: February 4, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jae-Woo Seo, Jin Tae Kim, Tae Joong Song, Hyoung-Suk Oh, Keun Ho Lee, Dal Hee Lee, Sung We Cho
  • Publication number: 20190348972
    Abstract: A flip-flop includes an input interface, a first latch, a third inverter, and a second latch. The third inverter and the fifth inverter include first transistors of a first type formed between a first power contact and a second power contact supplied with a power supply voltage on first-type fins, and second transistors of a second type formed between a first ground contact and a second ground contact supplied with a ground voltage on second-type fins.
    Type: Application
    Filed: July 26, 2019
    Publication date: November 14, 2019
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Ha-Young Kim, Dalhee Lee, Hyoung-Suk Oh, Keunho Lee, Taejoong Song, Sungwe Cho
  • Patent number: 10411677
    Abstract: A flip-flop includes an input interface, a first latch, a third inverter, and a second latch. The third inverter and the fifth inverter include first transistors of a first type formed between a first power contact and a second power contact supplied with a power supply voltage on first-type fins, and second transistors of a second type formed between a first ground contact and a second ground contact supplied with a ground voltage on second-type fins.
    Type: Grant
    Filed: July 14, 2017
    Date of Patent: September 10, 2019
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Ha-Young Kim, Dalhee Lee, Hyoung-Suk Oh, Keunho Lee, Taejoong Song, Sungwe Cho
  • Publication number: 20180019736
    Abstract: A flip-flop includes an input interface, a first latch, a third inverter, and a second latch. The third inverter and the fifth inverter include first transistors of a first type formed between a first power contact and a second power contact supplied with a power supply voltage on first-type fins, and second transistors of a second type formed between a first ground contact and a second ground contact supplied with a ground voltage on second-type fins.
    Type: Application
    Filed: July 14, 2017
    Publication date: January 18, 2018
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Ha-Young KIM, DALHEE LEE, Hyoung-Suk OH, Keunho LEE, TAEJOONG SONG, SUNGWE CHO
  • Publication number: 20170294430
    Abstract: An integrated circuit including a first standard cell including, first transistors, the first transistors being first unfolded transistors, a first metal pin, a second metal pin, and a third metal pin on a first layer, the first metal pin and the second metal pin having a first minimum metal center-to-metal center pitch therebetween less than or equal to 80 nm, a fourth metal pin and a fifth metal pin at a second layer, the fourth metal pin and the fifth metal pin extending in a second direction, the second direction being perpendicular to the first direction, a first via between the first metal pin and the fourth metal pin, and a second via between the third metal pin and the fifth metal pin such that a first via center-to-via center space between the first via and the second via is greater than double the first minimum metal center-to-metal center pitch.
    Type: Application
    Filed: October 20, 2016
    Publication date: October 12, 2017
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Jae-Woo SEO, Jin Tae KIM, Tae Joong SONG, Hyoung-Suk OH, Keun Ho LEE, Dal Hee LEE, Sung We CHO