Abstract: Disclosed are: (i) a method for forming an intermetal dielectric layer between metal wirings using a low-k dielectric material, and (ii) a semiconductor device with an intermetal dielectric layer comprising a low-k dielectric material. The method comprises the steps of: (a) forming a metal layer on a semiconductor substrate; (b) forming a plurality of metal wiring patterns by etching the metal layer selectively; (c) forming a first dielectric layer on the substrate and the plurality of metal wiring patterns; (d) forming a low-k dielectric layer on the first dielectric layer, the low-k dielectric layer having a lower dielectric constant than the first dielectric layer; and (e) forming a second dielectric layer on the low-k dielectric layer.

Abstract: A method for updating a memory is disclosed to increase a memory update rate. The method for updating a memory includes detecting a memory block to be updated among a plurality of memory blocks of a memory; and updating only the detected memory block.

Abstract: Canting or falling of an upper metal line may be prevented by improving adhesion between an insulation layer and a metal layer. A method for forming a semiconductor which improves adhesion between an insulation layer and a metal layer includes: preparing a substrate formed with a lower metal layer; forming an insulation layer on the substrate; forming a plug after etching the insulation layer; performing a silicon ion implantation process from above the insulation layer; forming an upper metal layer on the insulation layer, the upper metal layer having a bottom layer of a Ti layer or a TiN layer; and siliciding a predetermined region of the bottom layer of the upper metal layer by heat treatment of the substrate.

Abstract: A method for updating a memory is disclosed to increase a memory update rate. The method for updating a memory includes detecting a memory block to be updated among a plurality of memory blocks of a memory; and updating only the detected memory block.

Abstract: Canting or falling of an upper metal line may be prevented by improving adhesion between an insulation layer and a metal layer. A method for forming a semiconductor which improves adhesion between an insulation layer and a metal layer includes: preparing a substrate formed with a lower metal layer; forming an insulation layer on the substrate; forming a plug after etching the insulation layer; performing a silicon ion implantation process from above the insulation layer; forming an upper metal layer on the insulation layer, the upper metal layer having a bottom layer of a Ti layer or a TiN layer; and siliciding a predetermined region of the bottom layer of the upper metal layer by heat treatment of the substrate.

Abstract: Methods of manufacturing semiconductor devices are disclosed. In an illustrated method, a contact hole in an insulating layer is filled with a copper layer and the copper layer is planarized. During the planarzing, a CuO layer is parasitically formed on the surface of the copper layer. The CuO layer is removed by plasma processing using ammonia or nitrogen. A conductive CuN layer is formed on the surface of the copper layer. Stability of the removal process of CuO layer is secured.

Abstract: Disclosed is a method for manufacturing a silicide layer of semiconductor device. The disclosed comprises the steps of: depositing a lower metal layer on the surface of semiconductor substrate and then, performing a plasma treatment; and depositing an upper metal layer on the plasma-treated lower metal layer and then, performing a thermal treatment process, thereby forming a silicide layer on the surface of semiconductor substrate.

Abstract: Methods of manufacturing semiconductor devices are disclosed. In an illustrated method, a contact hole in an insulating layer is filled with a copper layer and the copper layer is planarized. During the planarzing, a CuO layer is parasitically formed on the surface of the copper layer. The CuO layer is removed by plasma processing using ammonia or nitrogen. A conductive CuN layer is formed on the surface of the copper layer. Stability of the removal process of CuO layer is secured.

Abstract: Disclosed is a method for manufacturing a silicide layer of semiconductor device. The disclosed comprises the steps of: depositing a lower metal layer on the surface of semiconductor substrate and then, performing a plasma treatment; and depositing an upper metal layer on the plasma-treated lower metal layer and then, performing a thermal treatment process, thereby forming a silicide layer on the surface of semiconductor substrate.

Abstract: Disclosed is a system for utilizing a mobile communication terminal as a wireless headset, comprising: a personal computer (PC) adapted to access to an Internet phone service through an Internet network; and mobile communication terminal for performing a function of a wireless headset of the PC when the PC accesses the Internet phone service, wherein the mobile communication terminal have a bluetooth function. The present invention allows a user to utilize a mobile communication terminal having a Bluetooth function built therein as a wireless headset of the PC, making it possible for him/her to conveniently use an Internet phone call service. Further, when an operation mode of the mobile communication terminal is set to a headset mode, a speech signal of a user inputted through a microphone is transmitted to the PC directly via a Bluetooth device and the speech signal of a counterpart inputted to the mobile communication terminal from the PC is applied to a speaker via the Bluetooth device.