Abstract: A wafer aligning apparatus includes a laser sensor that generates a trigger signal, a CCD camera imaging a wafer in response to the trigger signal, a signal processing unit that calculates a center alignment correction value for the wafer, and a robot controller that receives the center alignment correction value to control movement of a transfer robot. The laser sensor generates the trigger signal in accordance with a change in reflected light detected by the laser sensor, the change in the amount of reflected light being detected by the laser sensor when a boundary between a blade of the transfer robot and a coupler of the transfer robot passes under the laser sensor.

Abstract: A wafer aligning apparatus includes a laser sensor that generates a trigger signal, a CCD camera imaging a wafer in response to the trigger signal, a signal processing unit that calculates a center alignment correction value for the wafer, and a robot controller that receives the center alignment correction value to control movement of a transfer robot. The laser sensor generates the trigger signal in accordance with a change in reflected light detected by the laser sensor, the change in the amount of reflected light being detected by the laser sensor when a boundary between a blade of the transfer robot and a coupler of the transfer robot passes under the laser sensor.

Abstract: Embodiments of the invention provide a wafer aligning apparatus and a wafer aligning method. In one embodiment, the wafer aligning apparatus comprises an imaging unit adapted to take an image of a wafer being transferred from a load lock chamber to a transfer chamber and adapted to convert the image into digital signals, and a signal processing unit adapted to calculate a center alignment correction value for the wafer by comparing the digital signals to a master image stored in the signal processing unit. The wafer aligning apparatus further comprises a robot controller adapted to receive the center alignment correction value from the signal processing unit and adapted to control a transfer robot in accordance with the center alignment correction value to provide the wafer to a process chamber such that the center of the wafer is substantially aligned.

Abstract: A deposition apparatus includes a gas inflow tube, a plasma electrode, a substrate support functioning as an opposite electrode to the plasma electrode and mounting a substrate thereon, a plasma connector terminal connected to the plasma electrode, a first voltage application unit connected to the plasma connector terminal to apply a voltage thereto in a continuous mode, and a second voltage application unit connected to the plasma connector terminal to apply a voltage thereto in a pulse mode. The voltage applied by the first voltage application unit is an RF voltage of about 13.56 MHz, and the voltage applied by the second voltage application unit is a VHF voltage ranged from about 27 MHz to about 100 MHz.

Abstract: Embodiments of the invention provide a wafer aligning apparatus and a wafer aligning method. In one embodiment, the wafer aligning apparatus comprises an imaging unit adapted to take an image of a wafer being transferred from a load lock chamber to a transfer chamber and adapted to convert the image into digital signals, and a signal processing unit adapted to calculate a center alignment correction value for the wafer by comparing the digital signals to a master image stored in the signal processing unit. The wafer aligning apparatus further comprises a robot controller adapted to receive the center alignment correction value from the signal processing unit and adapted to control a transfer robot in accordance with the center alignment correction value to provide the wafer to a process chamber such that the center of the wafer is substantially aligned.