Abstract: Embodiments herein generally relate to chemical mechanical polishing (CMP) systems and methods for reducing non-uniform material removal rate at or near the peripheral edge of a substrate when compared to radially inward regions therefrom. In one embodiment, a polishing system includes a substrate carrier comprising an annular retaining ring which is used to surround a to-be-processed substrate during a polishing process and a polishing platen. The polishing platen includes cylindrical metal body having a pad-mounting surface. The pad-mounting surface comprises a plurality of polishing zones which include a first zone having a circular or annular shape, a second zone circumscribing the first zone, and a third zone circumscribing the second zone. A surface of the second zone is recessed from surfaces of the first and third zones adjacent thereto, and a width of the second zone is less than an outer diameter of the annular retaining ring.

Abstract: Embodiments herein generally relate to chemical mechanical polishing (CMP) systems and methods for reducing non-uniform material removal rate at or near the peripheral edge of a substrate when compared to radially inward regions therefrom. In one embodiment, a polishing system includes a substrate carrier comprising an annular retaining ring which is used to surround a to-be-processed substrate during a polishing process and a polishing platen. The polishing platen includes cylindrical metal body having a pad-mounting surface. The pad-mounting surface comprises a plurality of polishing zones which include a first zone having a circular or annular shape, a second zone circumscribing the first zone, and a third zone circumscribing the second zone. A surface of the second zone is recessed from surfaces of the first and third zones adjacent thereto, and a width of the second zone is less than an outer diameter of the annular retaining ring.