Patents by Inventor Hyuk-Lyong GWON

Hyuk-Lyong GWON has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for forming amorphous thin film
    Patent number: 10246773
    Abstract: A method for forming an amorphous thin film comprises: forming a seed layer on a surface of a base by supplying aminosilane-based gas on the base; forming the first boron-doped amorphous thin film by supplying the first source gas including boron-based gas on the seed layer; and forming the second boron-doped amorphous thin film by supplying the second source gas including boron-based gas on the first amorphous thin film.
    Type: Grant
    Filed: May 9, 2016
    Date of Patent: April 2, 2019
    Assignee: EUGENE TECHNOLOGY CO., LTD.
    Inventors: Seung-Woo Shin, Cha-Young Yoo, Woo-Duck Jung, Ho-Min Choi, Wan-Suk Oh, Koon-Woo Lee, Hyuk-Lyong Gwon, Ki-Ho Kim
  • METHOD FOR FORMING AMORPHOUS THIN FILM
    Publication number: 20180112307
    Abstract: According to an embodiment of the present invention, provided is a method for forming an amorphous thin film, the method comprising: forming a seed layer on a surface of a base by supplying aminosilane-based gas on the base; forming the first boron-doped amorphous thin film by supplying the first source gas including boron-based gas on the seed layer; and forming the second boron-doped amorphous thin film by supplying the second source gas including boron-based gas on the first amorphous thin film.
    Type: Application
    Filed: May 9, 2016
    Publication date: April 26, 2018
    Applicant: EUGENE TECHNOLOGY CO., LTD.
    Inventors: Seung-Woo SHIN, Cha-young YOO, Woo-Duck JUNG, Ho-Min CHOI, Wan-Suk OH, Koon-Woo LEE, Hyuk-Lyong GWON, Ki-Ho KIM
  • Method for forming polysilicon film
    Patent number: 9741562
    Abstract: Provided is a method for forming a silicon film, and more particularly, to a method for forming a polycrystalline silicon film including pretreatment process in a process for forming a silicon film. According to an embodiment of the present invention, a method for forming a polycrystalline silicon film by annealing a amorphous silicon film deposited on a base, the method includes a pretreatment process of allowing a pretreatment gas including at least one of N, C, O and B to flow.
    Type: Grant
    Filed: January 27, 2015
    Date of Patent: August 22, 2017
    Assignee: EUGENE TECHNOLOGY CO., LTD.
    Inventors: Seung-Woo Shin, Woo Duck Jung, Sung-Kil Cho, Ho Min Choi, Wan Suk Oh, Koon Woo Lee, Hyuk Lyong Gwon, Seong Jin Park, Ki Ho Kim, Kang-Wook Lee
  • METHOD FOR FORMING POLYSILICON FILM
    Publication number: 20170178906
    Abstract: Provided is a method for forming a silicon film, and more particularly, to a method for forming a polycrystalline silicon film including pretreatment process in a process for forming a silicon film. According to an embodiment of the present invention, a method for forming a polycrystalline silicon film by annealing a amorphous silicon film deposited on a base, the method includes a pretreatment process of allowing a pretreatment gas including at least one of N, C, O and B to flow.
    Type: Application
    Filed: January 27, 2015
    Publication date: June 22, 2017
    Applicant: EUGENE TECHNOLOGY CO., LTD.
    Inventors: Seung-Woo SHIN, Woo Duck JUNG, Sung-kil CHO, Ho Min CHOI, Wan Suk OH, Koon Woo LEE, Hyuk-Lyong GWON, Seong Jin PARK, Ki Ho KIM, Kang-Wook LEE