Patents by Inventor Hyuk Min Lee

Hyuk Min Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7977134
    Abstract: A nitride-based semiconductor LED includes a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer and a p-type nitride semiconductor layer that are sequentially formed on a predetermined region of the n-type nitride semiconductor layer; a transparent electrode formed on the p-type nitride semiconductor layer; a p-electrode pad formed on the transparent electrode, the p-electrode pad being spaced from the outer edge line of the p-type nitride semiconductor layer by 50 to 200 ?m; and an n-electrode pad formed on the n-type nitride semiconductor layer.
    Type: Grant
    Filed: October 6, 2006
    Date of Patent: July 12, 2011
    Assignee: Samsung LED Co., Ltd.
    Inventors: Hyuk Min Lee, Hyun Kyung Kim, Dong Joon Kim, Hyoun Soo Shin
  • Publication number: 20110084305
    Abstract: A nitride-based semiconductor LED includes a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer and a p-type nitride semiconductor layer that are sequentially formed on a predetermined region of the n-type nitride semiconductor layer; a transparent electrode formed on the p-type nitride semiconductor layer; a p-electrode pad formed on the transparent electrode, the p-electrode pad being spaced from the outer edge line of the p-type nitride semiconductor layer by 50 to 200 ?m; and an n-electrode pad formed on the n-type nitride semiconductor layer.
    Type: Application
    Filed: December 14, 2010
    Publication date: April 14, 2011
    Applicant: SAMSUNG LED CO., LTD.
    Inventors: Hyuk Min LEE, Hyun Kyung Kim, Dong Joon Kim, Hyoun Soo Shin
  • Patent number: 7893447
    Abstract: A nitride-based semiconductor LED includes a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer and a p-type nitride semiconductor layer that are sequentially formed on a predetermined region of the n-type nitride semiconductor layer; a transparent electrode formed on the p-type nitride semiconductor layer; a p-electrode pad formed on the transparent electrode, the p-electrode pad being spaced from the outer edge line of the p-type nitride semiconductor layer by 50 to 200 ?m; and an n-electrode pad formed on the n-type nitride semiconductor layer.
    Type: Grant
    Filed: May 27, 2008
    Date of Patent: February 22, 2011
    Assignee: Samsung LED Co., Ltd.
    Inventors: Hyuk Min Lee, Hyun Kyung Kim, Dong Joon Kim, Hyoun Soo Shin
  • Patent number: 7456438
    Abstract: A nitride-based semiconductor LED which is flip-chip bonded on a lead pattern of a sub-mount through a bump ball comprises a substrate; a light-emitting structure formed on the substrate; an electrode formed on the light-emitting structure; a protective film formed on the resulting structure having the electrode formed therein, the protective film exposing the electrode surface corresponding to a portion which is connected to the lead pattern of the sub-mount through a bump ball; and a grid-shape buffer film formed on the electrode surface exposed through the protective film.
    Type: Grant
    Filed: October 17, 2006
    Date of Patent: November 25, 2008
    Assignee: Samsung Electro-Mechanics Co., ltd.
    Inventors: Hyuk Min Lee, Hyoun Soo Shin, Chang Wan Kim, Yong Chun Kim
  • Publication number: 20080224168
    Abstract: A nitride-based semiconductor LED includes a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer and a p-type nitride semiconductor layer that are sequentially formed on a predetermined region of the n-type nitride semiconductor layer; a transparent electrode formed on the p-type nitride semiconductor layer; a p-electrode pad formed on the transparent electrode, the p-electrode pad being spaced from the outer edge line of the p-type nitride semiconductor layer by 50 to 200 ?m; and an n-electrode pad formed on the n-type nitride semiconductor layer.
    Type: Application
    Filed: May 27, 2008
    Publication date: September 18, 2008
    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Hyuk Min Lee, Hyun Kyung Kim, Dong Joon Kim, Hyoun Soo Shin