Patents by Inventor Hyuk Ho KWON
Hyuk Ho KWON has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11345998Abstract: A deposition apparatus includes an upper shower head and a lower shower head within a process chamber, the upper shower head and the lower shower head facing each other, a support structure between the upper shower head and the lower shower head, the support structure being connected to the lower shower head to support a wafer, and a plasma process region between the wafer supported by the support structure and the lower shower head, wherein the lower shower head includes lower holes to jet a lower gas in a direction of the wafer, wherein the upper shower head includes upper holes to jet an upper gas in a direction of the wafer, and wherein the support structure includes through opening portions to discharge a portion of the lower gas jetted through the lower holes to a space between the support structure and the upper shower head.Type: GrantFiled: May 24, 2018Date of Patent: May 31, 2022Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Byung Sun Park, Ji Youn Seo, Ji Woon Im, Hyun Seok Lim, Byung Ho Chun, Yu Seon Kang, Hyuk Ho Kwon, Sung Jin Park, Tae Yong Eom, Dong Hyeop Ha
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Patent number: 11018045Abstract: A deposition apparatus for depositing a material on a wafer, the apparatus including a lower shower head; an upper shower head disposed on the lower shower head, the upper shower head facing the lower shower head; and a support structure between the upper shower head and the lower shower head, the wafer being supportable by the support structure, wherein the upper shower head includes upper holes for providing an upper gas onto the wafer, the lower shower head includes lower holes for providing a lower gas onto the wafer, the support structure includes a ring body surrounding the wafer; a plurality of ring support shafts between the ring body and the lower shower head; and a plurality of wafer supports extending inwardly from a lower region of the ring body to support the wafer, and the plurality of wafer supports are spaced apart from one another.Type: GrantFiled: May 31, 2018Date of Patent: May 25, 2021Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Ji Youn Seo, Byung Sun Park, Sung Jin Park, Ji Woon Im, Hyun Seok Lim, Byung Ho Chun, Yu Seon Kang, Hyuk Ho Kwon, Tae Yong Eom, Dae Hun Choi, Dong Hyeop Ha
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Patent number: 10971521Abstract: A three-dimensional semiconductor device includes: a peripheral circuit structure disposed on a lower substrate, and including an internal peripheral pad portion; an upper substrate disposed on the peripheral circuit structure; a stack structure disposed on the upper substrate, and including gate horizontal patterns; a vertical channel structure passing through the stack structure in a first region on the upper substrate; a first vertical support structure passing through the stack structure in a second region on the upper substrate; and an internal peripheral contact structure passing through the stack structure and the upper substrate, and electrically connected to the internal peripheral pad portion, wherein an upper surface of the first vertical support structure is disposed on a different level from an upper surface of the vertical channel structure, and is coplanar with an upper surface of the internal peripheral contact structure.Type: GrantFiled: September 28, 2020Date of Patent: April 6, 2021Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Han Vit Yang, Yong Hoon Son, Moon Jong Kang, Hyuk Ho Kwon, Sung Soo Ahn, So Yoon Lee
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Publication number: 20210036014Abstract: A three-dimensional semiconductor device includes: a peripheral circuit structure disposed on a lower substrate, and including an internal peripheral pad portion; an upper substrate disposed on the peripheral circuit structure; a stack structure disposed on the upper substrate, and including gate horizontal patterns; a vertical channel structure passing through the stack structure in a first region on the upper substrate; a first vertical support structure passing through the stack structure in a second region on the upper substrate; and an internal peripheral contact structure passing through the stack structure and the upper substrate, and electrically connected to the internal peripheral pad portion, wherein an upper surface of the first vertical support structure is disposed on a different level from an upper surface of the vertical channel structure, and is coplanar with an upper surface of the internal peripheral contact structure.Type: ApplicationFiled: September 28, 2020Publication date: February 4, 2021Applicant: Samsung Electronics Co., Ltd.Inventors: Han Vit YANG, Yong Hoon SON, Moon Jong KANG, Hyuk Ho KWON, Sung Soo AHN, So Yoon LEE
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Patent number: 10804289Abstract: A three-dimensional semiconductor device includes: a peripheral circuit structure disposed on a lower substrate, and including an internal peripheral pad portion; an upper substrate disposed on the peripheral circuit structure; a stack structure disposed on the upper substrate, and including gate horizontal patterns; a vertical channel structure passing through the stack structure in a first region on the upper substrate; a first vertical support structure passing through the stack structure in a second region on the upper substrate; and an internal peripheral contact structure passing through the stack structure and the upper substrate, and electrically connected to the internal peripheral pad portion, wherein an upper surface of the first vertical support structure is disposed on a different level from an upper surface of the vertical channel structure, and is coplanar with an upper surface of the internal peripheral contact structure.Type: GrantFiled: January 2, 2019Date of Patent: October 13, 2020Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Han Vit Yang, Yong Hoon Son, Moon Jong Kang, Hyuk Ho Kwon, Sung Soo Ahn, So Yoon Lee
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Publication number: 20200027893Abstract: A three-dimensional semiconductor device includes: a peripheral circuit structure disposed on a lower substrate, and including an internal peripheral pad portion; an upper substrate disposed on the peripheral circuit structure; a stack structure disposed on the upper substrate, and including gate horizontal patterns; a vertical channel structure passing through the stack structure in a first region on the upper substrate; a first vertical support structure passing through the stack structure in a second region on the upper substrate; and an internal peripheral contact structure passing through the stack structure and the upper substrate, and electrically connected to the internal peripheral pad portion, wherein an upper surface of the first vertical support structure is disposed on a different level from an upper surface of the vertical channel structure, and is coplanar with an upper surface of the internal peripheral contact structure.Type: ApplicationFiled: January 2, 2019Publication date: January 23, 2020Inventors: Han Vit YANG, Yong Hoon SON, Moon Jong KANG, Hyuk Ho KWON, Sung Soo AHN, So Yoon LEE
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Publication number: 20190148211Abstract: A deposition apparatus for depositing a material on a wafer, the apparatus including a lower shower head; an upper shower head disposed on the lower shower head, the upper shower head facing the lower shower head; and a support structure between the upper shower head and the lower shower head, the wafer being supportable by the support structure, wherein the upper shower head includes upper holes for providing an upper gas onto the wafer, the lower shower head includes lower holes for providing a lower gas onto the wafer, the support structure includes a ring body surrounding the wafer; a plurality of ring support shafts between the ring body and the lower shower head; and a plurality of wafer supports extending inwardly from a lower region of the ring body to support the wafer, and the plurality of wafer supports are spaced apart from one another.Type: ApplicationFiled: May 31, 2018Publication date: May 16, 2019Inventors: Ji Youn SEO, Byung Sun PARK, Sung Jin PARK, Ji Woon IM, Hyun Seok LIM, Byung Ho CHUN, Yu Seon KANG, Hyuk Ho KWON, Tae Yong EOM, Dae Hun CHOI, Dong Hyeop HA
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Publication number: 20190145001Abstract: A deposition apparatus includes an upper shower head and a lower shower head within a process chamber, the upper shower head and the lower shower head facing each other, a support structure between the upper shower head and the lower shower head, the support structure being connected to the lower shower head to support a wafer, and a plasma process region between the wafer supported by the support structure and the lower shower head, wherein the lower shower head includes lower holes to jet a lower gas in a direction of the wafer, wherein the upper shower head includes upper holes to jet an upper gas in a direction of the wafer, and wherein the support structure includes through opening portions to discharge a portion of the lower gas jetted through the lower holes to a space between the support structure and the upper shower head.Type: ApplicationFiled: May 24, 2018Publication date: May 16, 2019Inventors: Byung Sun PARK, Ji Youn SEO, Ji Woon IM, Hyun Seok LIM, Byung Ho CHUN, Yu Seon KANG, Hyuk Ho KWON, Sung Jin PARK, Tae Yong EOM, Dong Hyeop HA
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Patent number: 8562544Abstract: A pen type device for ultrasound guided fine needle aspiration cytology and biopsy comprises a hollow body having a needle hole, a sliding part slidably mounted inside the body, elastic members mounted inside the body, a syringe having a cylinder mounted, a rotating part disposed inside the sliding part and the body, a head screw-coupled to the rear end of the sliding part and drawn out from the body, and a negative pressure generating part mounted on the body to generate negative pressure to the syringe by pulling a piston of the syringe when a button located on the outer face of the body is pushed.Type: GrantFiled: January 27, 2012Date of Patent: October 22, 2013Inventor: Hyuk Ho Kwon
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Publication number: 20130172777Abstract: A pen type device for ultrasound guided fine needle aspiration cytology and biopsy comprises a hollow body having a needle hole, a sliding part slidably mounted inside the body, elastic members mounted inside the body, a syringe having a cylinder mounted, a rotating part disposed inside the sliding part and the body, a head screw-coupled to the rear end of the sliding part and drawn out from the body, and a negative pressure generating part mounted on the body to generate negative pressure to the syringe by pulling a piston of the syringe when a button located on the outer face of the body is pushed.Type: ApplicationFiled: January 27, 2012Publication date: July 4, 2013Inventor: Hyuk Ho KWON
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Publication number: 20130115346Abstract: A method for preparing a purified beverage for renal failure patients and a purified beverage for renal failure patients prepared by the method comprises: introducing a raw beverage containing a high concentration of phosphorus or potassium into a filter unit such that the raw beverage flows through the inner side of the filter unit in a first direction; and introducing a perfusion into the filter unit such that the perfusion flows through the outside of the filter unit in a second direction, and the raw beverage and the perfusion are circulating in opposite direction, whereby phosphorus or potassium in the raw beverage moves to the perfusion effectively, thereby preparing a purified beverage containing a low concentration of phosphorus or potassium.Type: ApplicationFiled: December 2, 2011Publication date: May 9, 2013Inventor: Hyuk Ho KWON