Patents by Inventor Hyun A Kim

Hyun A Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240313184
    Abstract: A light emitting diode includes a first conductivity type semiconductor layer, a mesa disposed on the first conductivity type semiconductor layer, and including an active layer and a second conductivity type semiconductor layer, and a lower insulation layer covering the mesa and at least a portion of the first conductivity type semiconductor layer exposed around the mesa, and having a first opening for allowing electrical connection to the first conductivity type semiconductor layer and a second opening for allowing electrical connection to the second conductivity type semiconductor layer. The active layer generates light having a peak wavelength of about 500 nm or less, and the lower insulation layer includes a distributed Bragg reflector.
    Type: Application
    Filed: May 22, 2024
    Publication date: September 19, 2024
    Inventors: Jae Kwon KIM, Min Chan HEO, Kyoung Wan KIM, Jong Kyu KIM, Hyun A KIM, Joon Sup LEE
  • Patent number: 12015112
    Abstract: A light emitting diode includes a first conductivity type semiconductor layer, a mesa disposed on the first conductivity type semiconductor layer, and including an active layer and a second conductivity type semiconductor layer, and a lower insulation layer covering the mesa and at least a portion of the first conductivity type semiconductor layer exposed around the mesa, and having a first opening for allowing electrical connection to the first conductivity type semiconductor layer and a second opening for allowing electrical connection to the second conductivity type semiconductor layer. The active layer generates light having a peak wavelength of about 500 nm or less, and the lower insulation layer includes a distributed Bragg reflector.
    Type: Grant
    Filed: July 29, 2021
    Date of Patent: June 18, 2024
    Assignee: SEOUL VIOSYS CO., LTD.
    Inventors: Jae Kwon Kim, Min Chan Heo, Kyoung Wan Kim, Jong Kyu Kim, Hyun A Kim, Joon Sup Lee
  • Publication number: 20230079200
    Abstract: A light emitting diode chip having improved light extraction efficiency is provided. The light emitting diode chip includes a substrate, a first conductivity type semiconductor layer, a mesa, a side coating layer, and a reflection structure. The first conductivity type semiconductor layer is disposed on the substrate. The mesa includes an active layer and a second conductivity type semiconductor layer. The mesa is disposed on a partial region of the first conductivity type semiconductor layer to expose an upper surface of the first conductivity type semiconductor layer along an edge of the first conductivity type semiconductor layer. The side coating layer(s) covers a side surface of the mesa. The reflection structure is spaced apart from the side coating layer(s) and disposed on the exposed first conductivity type semiconductor layer.
    Type: Application
    Filed: November 15, 2022
    Publication date: March 16, 2023
    Inventors: Se Hee OH, Jae Kwon KIM, Jong Kyu KIM, Hyun A KIM, Joon Sup LEE
  • Patent number: 11587972
    Abstract: A light emitting device including a substrate, first and second light emitting diodes (LEDs) each including first and second semiconductor layers, a first upper electrode disposed on the second LED, electrically connected to the first LED, and insulated from the second semiconductor layer of the first LED, and a second upper electrode disposed on the second LED, electrically connected to the second LED, and insulated from the second semiconductor layer of the second LED, in which a portion of the substrate between the LEDs does not overlap the semiconductor layers, the first upper electrode has a portion electrically connected to the second semiconductor layer of the second LED and covering the first portion and portions of the LEDs, and the second upper electrode has a groove partially enclosing the portion of the first upper electrode in a plan view.
    Type: Grant
    Filed: October 4, 2021
    Date of Patent: February 21, 2023
    Assignee: Seoul Viosys Co., Ltd.
    Inventors: Jong Min Jang, Jong Hyeon Chae, Joon Sup Lee, Daewoong Suh, Hyun A Kim, Won Young Roh, Min Woo Kang
  • Patent number: 11515451
    Abstract: A light emitting diode chip having improved light extraction efficiency is provided. The light emitting diode chip includes a substrate, a first conductivity type semiconductor layer, a mesa, a side coating layer, and a reflection structure. The first conductivity type semiconductor layer is disposed on the substrate. The mesa includes an active layer and a second conductivity type semiconductor layer. The mesa is disposed on a partial region of the first conductivity type semiconductor layer to expose an upper surface of the first conductivity type semiconductor layer along an edge of the first conductivity type semiconductor layer. The side coating layer(s) covers a side surface of the mesa. The reflection structure is spaced apart from the side coating layer(s) and disposed on the exposed first conductivity type semiconductor layer.
    Type: Grant
    Filed: March 19, 2020
    Date of Patent: November 29, 2022
    Assignee: SEOUL VIOSYS CO., LTD.
    Inventors: Se Hee Oh, Jae Kwon Kim, Jong Kyu Kim, Hyun A Kim, Joon Sup Lee
  • Publication number: 20220208851
    Abstract: A light-emitting element includes a light-emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first contact electrode and a second contact electrode located on the light-emitting structure, and respectively making ohmic contact with the first conductive semiconductor layer and the second conductive semiconductor layer; an insulation layer for covering a part of the first contact electrode and the second contact electrode so as to insulate the first contact electrode and the second contact electrode; a first electrode pad and a second electrode pad electrically connected to each of the first contact electrode and the second contact electrode; and a radiation pad formed on the insulation layer, and radiating heat generated from the light-emitting structure.
    Type: Application
    Filed: March 17, 2022
    Publication date: June 30, 2022
    Inventors: Jong Kyu KIM, So Ra LEE, Yeo Jin YOON, Jae Kwon KIM, Joon Sup LEE, Min Woo KANG, Se Hee OH, Hyun A. KIM, Hyoung Jin LIM
  • Publication number: 20220158056
    Abstract: A light emitting diode having a plurality of light emitting cells is provided. The light emitting diode according to an exemplary embodiment includes a lower insulation layer covering an ohmic reflection layer, connectors disposed on the lower insulation layer to connect the light emitting cells, and an upper insulation layer covering the connectors and the lower insulation layer. An edge of the lower insulation layer is spaced apart farther from an edge of the upper insulation layer than an edge of the light emitting cell. The lower insulation layer susceptible to moisture may be protected and reliability of the light emitting diode may improve.
    Type: Application
    Filed: November 15, 2021
    Publication date: May 19, 2022
    Inventors: Se Hee OH, Hyun A. KIM, Jong Kyu KIM, Jong Hyeon CHAE
  • Patent number: 11282892
    Abstract: A light-emitting element includes a light-emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first contact electrode and a second contact electrode located on the light-emitting structure, and respectively making ohmic contact with the first conductive semiconductor layer and the second conductive semiconductor layer; an insulation layer for covering a part of the first contact electrode and the second contact electrode so as to insulate the first contact electrode and the second contact electrode; a first electrode pad and a second electrode pad electrically connected to each of the first contact electrode and the second contact electrode; and a radiation pad formed on the insulation layer, and radiating heat generated from the light-emitting structure.
    Type: Grant
    Filed: October 7, 2019
    Date of Patent: March 22, 2022
    Assignee: SEOUL VIOSYS CO., LTD.
    Inventors: Jong Kyu Kim, So Ra Lee, Yeo Jin Yoon, Jae Kwon Kim, Joon Sup Lee, Min Woo Kang, Se Hee Oh, Hyun A. Kim, Hyoung Jin Lim
  • Publication number: 20220052244
    Abstract: A display apparatus includes a display panel, a panel guide supporting a lower edge of the display panel, and a backlight unit supplying light to the display panel. The backlight unit includes at least one first substrate, a plurality of light emitting elements, and a plurality of light guide structures disposed on the at least first one substrate and arranged relative to one or more of the plurality of light emitting elements.
    Type: Application
    Filed: November 1, 2021
    Publication date: February 17, 2022
    Applicant: SEOUL VIOSYS CO., LTD.
    Inventors: Se Hee OH, Hyun A KIM, Jong Kyu KIM, Jong Hyeon CHAE
  • Publication number: 20220028921
    Abstract: A light emitting device including a substrate, first and second light emitting diodes (LEDs) each including first and second semiconductor layers, a first upper electrode disposed on the second LED, electrically connected to the first LED, and insulated from the second semiconductor layer of the first LED, and a second upper electrode disposed on the second LED, electrically connected to the second LED, and insulated from the second semiconductor layer of the second LED, in which a portion of the substrate between the LEDs does not overlap the semiconductor layers, the first upper electrode has a portion electrically connected to the second semiconductor layer of the second LED and covering the first portion and portions of the LEDs, and the second upper electrode has a groove partially enclosing the portion of the first upper electrode in a plan view.
    Type: Application
    Filed: October 4, 2021
    Publication date: January 27, 2022
    Inventors: Jong Min Jang, Jong Hyeon Chae, Joon Sup Lee, Daewoong Suh, Hyun A Kim, Won Young Roh, Min Woo Kang
  • Patent number: 11183620
    Abstract: A light emitting diode having a plurality of light emitting cells is provided. The light emitting diode according to an exemplary embodiment includes a lower insulation layer covering an ohmic reflection layer, connectors disposed on the lower insulation layer to connect the light emitting cells, and an upper insulation layer covering the connectors and the lower insulation layer. An edge of the lower insulation layer is spaced apart farther from an edge of the upper insulation layer than an edge of the light emitting cell. The lower insulation layer susceptible to moisture may be protected and reliability of the light emitting diode may improve.
    Type: Grant
    Filed: May 28, 2019
    Date of Patent: November 23, 2021
    Assignee: SEOUL VIOSYS CO., LTD.
    Inventors: Se Hee Oh, Hyun A Kim, Jong Kyu Kim, Jong Hyeon Chae
  • Publication number: 20210359188
    Abstract: A light emitting diode includes a first conductivity type semiconductor layer, a mesa disposed on the first conductivity type semiconductor layer, and including an active layer and a second conductivity type semiconductor layer, and a lower insulation layer covering the mesa and at least a portion of the first conductivity type semiconductor layer exposed around the mesa, and having a first opening for allowing electrical connection to the first conductivity type semiconductor layer and a second opening for allowing electrical connection to the second conductivity type semiconductor layer. The active layer generates light having a peak wavelength of about 500 nm or less, and the lower insulation layer includes a distributed Bragg reflector.
    Type: Application
    Filed: July 29, 2021
    Publication date: November 18, 2021
    Applicant: SEOUL VIOSYS CO., LTD.
    Inventors: Jae Kwon KIM, Min Chan HEO, Kyoung Wan KIM, Jong Kyu KIM, Hyun A KIM, Joon Sup LEE
  • Patent number: 11139338
    Abstract: A light emitting device including a substrate, first and second light emitting diodes disposed thereon and including a first semiconductor layer, an active layer, and a second semiconductor layer, a first upper electrode electrically connected to the first semiconductor layer and insulated from the second semiconductor layer of the first light emitting diode, a second upper electrode electrically connected to the first semiconductor layer and insulated from the second semiconductor layer of the second light emitting diode, in which the first and second light emitting diodes are spaced apart from each other to expose the substrate, the first upper electrode has a protrusion electrically connected to the second semiconductor layer of the second light emitting diode and covering portions of the exposed substrate, the first light emitting diode, and the second light emitting diode, and the second upper electrode has a groove.
    Type: Grant
    Filed: April 24, 2020
    Date of Patent: October 5, 2021
    Assignee: Seoul Viosys Co., Ltd.
    Inventors: Jong Min Jang, Jong Hyeon Chae, Joon Sup Lee, Daewoong Suh, Hyun A Kim, Won Young Roh, Min Woo Kang
  • Publication number: 20210257528
    Abstract: A light emitting diode includes a first conductivity type semiconductor layer, a mesa with an active layer and a second conductivity type semiconductor layer disposed thereon, a first contact layer comprising an outer contact portion contacting the first conductivity type semiconductor layer near an edge thereof and an inner contact portion contacting the first conductivity type semiconductor layer in a region surrounded by the outer contact portion; a second contact layer disposed on the mesa and contacting the second conductivity type semiconductor layer; a first insulation layer covering the mesa, insulating the first contact layer, and exposing the first conductivity type semiconductor layer for the outer contact portion and the inner contact portion to contact the first conductivity type semiconductor layer, wherein the outer contact portion and the first insulation layer alternately contact the first conductivity type semiconductor layer along a side surface of the mesa.
    Type: Application
    Filed: May 3, 2021
    Publication date: August 19, 2021
    Inventors: Se Hee OH, Hyun A KIM, Jong Kyu KIM, Hyoung Jin LIM
  • Patent number: 10998479
    Abstract: A light emitting diode includes a first light emitting cell and a second light emitting cell comprising an n-type semiconductor layer, and a p-type semiconductor layer, respectively; reflection structures contacting the p-type semiconductor layers; a first contact layer in ohmic contact with the n-type semiconductor layer of the first light emitting cell; a second contact layer in ohmic contact with the n-type semiconductor layer of the second light emitting cell and connected to the reflection structure on the first light emitting cell. An n-electrode pad is connected to the first contact layer; and a p-electrode pad is connected to the reflection structure on the second light emitting cell. The first light emitting cell and the second light emitting cell are isolated from each other, and their outer side surfaces are inclined steeper than the inner sides. Therefore, a forward voltage may be lowered and light output may be improved.
    Type: Grant
    Filed: October 12, 2018
    Date of Patent: May 4, 2021
    Assignee: Seoul Viosys Co., Ltd.
    Inventors: Se Hee Oh, Hyun A Kim, Jong Kyu Kim, Hyoung Jin Lim
  • Patent number: 10991851
    Abstract: Provided are a light emitting diode (LED) in which a conductive barrier layer surrounding a reflective metal layer is defined by a protective insulating layer, and a method of manufacturing the same. A reflection pattern including a reflective metal layer and a conductive barrier layer is formed on an emission structure in which a first semiconductor layer, an active layer, and a second semiconductor layer are formed. The conductive barrier layer prevents diffusion of a reflective metal layer and extends to a protective insulating layer recessed under a photoresist pattern having an overhang structure during a forming process. Accordingly, a phenomenon where the conductive barrier layer is in contact with sidewalls of the photoresist pattern having an over-hang structure and the reflective metal layer forms points is prevented. Thus, LED modules having various shapes may be manufactured.
    Type: Grant
    Filed: June 1, 2020
    Date of Patent: April 27, 2021
    Assignee: SEOUL VIOSYS CO., LTD.
    Inventors: Jong Hyeon Chae, Jong Min Jang, Won Young Roh, Dae Woong Suh, Min Woo Kang, Joon Sub Lee, Hyun A. Kim
  • Patent number: 10985304
    Abstract: A light emitting diode including a first semiconductor layer, a mesa disposed thereon and including a second semiconductor layer and an active layer, an ohmic reflection layer disposed on the mesa to form an ohmic contact with the second semiconductor layer, a lower insulation layer covering the mesa and the ohmic reflection layer and partially exposing the first semiconductor layer and the ohmic reflection layer, a first pad metal layer disposed on the lower insulation layer and electrically connected to the first semiconductor layer, a metal reflection layer disposed on the lower insulation layer and laterally spaced apart from the first pad metal layer, and an upper insulation layer covering the first pad metal layer and the metal reflection layer, and having a first opening exposing the first pad metal layer, in which at least a portion of the metal reflection layer covers a side surface of the mesa.
    Type: Grant
    Filed: October 11, 2017
    Date of Patent: April 20, 2021
    Assignee: Seoul Viosys Co., Ltd.
    Inventors: Se Hee Oh, Hyun A Kim, Joon Sup Lee, Min Woo Kang, Hyoung Jin Lim
  • Patent number: 10950755
    Abstract: A light emitting diode is provided to include a first conductive-type semiconductor layer; a mesa including a second conductive-type semiconductor layer disposed on the first conductive-type semiconductor layer and an active layer interposed between the first and the second conductive-type semiconductor layers; and a first electrode disposed on the mesa, wherein the first conductive-type semiconductor layer includes a first contact region disposed around the mesa along an outer periphery of the first conductive-type semiconductor layer; and a second contact region at least partially surrounded by the mesa, the first electrode is electrically connected to at least a portion of the first contact region and at least a portion of the second contact region, and a linewidth of an adjoining region between the first contact region and the first electrode is greater than the linewidth of an adjoining region between the second contact region and the first electrode.
    Type: Grant
    Filed: September 17, 2020
    Date of Patent: March 16, 2021
    Assignee: SEOUL VIOSYS CO., LTD.
    Inventors: Jong Hyeon Chae, Joon Sup Lee, Daewoong Suh, Won Young Roh, Min Woo Kang, Jong Min Jang, Se Hee Oh, Hyun A Kim
  • Patent number: 10937938
    Abstract: A light emitting device includes a first light emitting cell, a second light emitting cell, a first conductive pattern, a second conductive pattern, and a connection pattern. The connection pattern includes contact portions electrically connected to a second conductivity type semiconductor layer of the first light emitting cell and a first conductivity type semiconductor layer of the second light emitting cell. At an edge of a first region facing the second light emitting cell, one contact portion of the first conductive pattern is disposed between the contact portions of the connection pattern electrically connected to the second conductivity type semiconductor layer of the first light emitting cell, and one contact portion of the first conductive pattern is open outwards.
    Type: Grant
    Filed: August 9, 2019
    Date of Patent: March 2, 2021
    Assignee: SEOUL VIOSYS CO., LTD.
    Inventors: Se Hee Oh, Min Woo Kang, Jong Kyu Kim, Hyun A Kim
  • Publication number: 20210005785
    Abstract: A light emitting diode is provided to include a first conductive-type semiconductor layer; a mesa including a second conductive-type semiconductor layer disposed on the first conductive-type semiconductor layer and an active layer interposed between the first and the second conductive-type semiconductor layers; and a first electrode disposed on the mesa, wherein the first conductive-type semiconductor layer includes a first contact region disposed around the mesa along an outer periphery of the first conductive-type semiconductor layer; and a second contact region at least partially surrounded by the mesa, the first electrode is electrically connected to at least a portion of the first contact region and at least a portion of the second contact region, and a linewidth of an adjoining region between the first contact region and the first electrode is greater than the linewidth of an adjoining region between the second contact region and the first electrode.
    Type: Application
    Filed: September 17, 2020
    Publication date: January 7, 2021
    Inventors: Jong Hyeon CHAE, Joon Sup LEE, Daewoong SUH, Won Young ROH, Min Woo KANG, Jong Min JANG, Se Hee OH, Hyun A KIM