Abstract: A display apparatus includes a substrate including a display area where a plurality of display elements are disposed, and a display circuit board disposed outside the display area. The display circuit board includes a first pad and a second pad, which are disposed on the display circuit board and connected to the substrate, and an insulating layer disposed between the first pad and the second pad, and the first pad overlaps the second pad and a thickness of at least a portion of the second pad is different from a thickness of the first pad.

Abstract: A method of operating a non-volatile memory device, which is configured to communicate with a storage controller includes: receiving a first request indicating a read reclaim determination and including environment information from the storage controller, performing a first on-chip read operation for generating first distribution information based on the first request, determining whether a read reclaim is required based on the first distribution information, and providing the storage controller with a determination result having a first bit value in response to determining that the read reclaim is required.

Abstract: Disclosed is a storage controller which includes a history table and communicates with a non-volatile memory device. A method of operating the storage controller includes determining whether history data of a target memory block are registered at the history table, providing a history read request for the target memory block based on the history data when it is determined that the history data are registered, receiving first raw data corresponding to the history read request from the non-volatile memory device, generating skew information of the target memory block based on the first raw data and the history data, and determining whether to perform a read reclaim operation of the target memory block, based on the skew information.

Abstract: Disclosed is a method of operating a storage controller which communicates with a non-volatile memory device. The method includes providing a read command to the non-volatile memory device, receiving first read data and first distribution information corresponding to the read command from the non-volatile memory device, determining whether an error of the first read data is uncorrectable, and updating offset information of a history table in the storage controller based on the first distribution information, in response to determining that the error of the first read data is correctable.

Abstract: A display apparatus includes a base substrate including a display region in which an image is displayed and a peripheral region that is a non-display region adjacent to the display region, a plurality of pixels disposed on the base substrate in the display region, each of the pixels including a thin film transistor that includes an oxide semiconductor pattern, a data driver disposed in the peripheral region and configured to provide a data voltage to the pixels, and a plurality of test patterns disposed on the base substrate in the peripheral region, each of the test patterns including a test thin film transistor that includes a test oxide semiconductor pattern.

Abstract: Disclosed is a method of operating a storage controller which communicates with a non-volatile memory device. The method includes providing a read command to the non-volatile memory device, receiving first read data and first distribution information corresponding to the read command from the non-volatile memory device, determining whether an error of the first read data is uncorrectable, and updating offset information of a history table in the storage controller based on the first distribution information, in response to determining that the error of the first read data is correctable.

Abstract: A storage controller communicates with a non-volatile memory device, and an operation method of the storage controller includes determining whether a first read voltage is registered at a history table, when it is determined that the first read voltage is registered at the history table, performing a first direct memory access (DMA) read operation on data stored in the non-volatile memory device, based on the first read voltage, obtaining a page count value, based on the first DMA read operation, determining a second read voltage different from the first read voltage based on a difference between the page count value and an idle count value, without an additional read operation for the data stored in the non-volatile memory device, and updating the first read voltage of the history table based on the second read voltage.

Abstract: Disclosed is a method of operating a storage controller which communicates with a non-volatile memory device. The method includes outputting a first command including a request for on-chip valley search (OVS) count data of a memory region of the non-volatile memory device to the non-volatile memory device, wherein the OVS count data includes a first count value and a second count value of a first read voltage and a third count value and a fourth count value of a second read voltage, receiving the OVS count data from the non-volatile memory device, determining a distribution type of the memory region to be a predicted distribution type, from among a plurality of distribution types, based on the OVS count data, and determining a subsequent operation, based on the predicted distribution type.

Abstract: A method of operating a non-volatile memory device, which is configured to communicate with a storage controller includes: receiving a first request indicating a read reclaim determination and including environment information from the storage controller, performing a first on-chip read operation for generating first distribution information based on the first request, determining whether a read reclaim is required based on the first distribution information, and providing the storage controller with a determination result having a first bit value in response to determining that the read reclaim is required.

Abstract: Disclosed is a method of operating a storage controller which communicates with a non-volatile memory device. The method includes providing a read command to the non-volatile memory device, receiving first read data and first distribution information corresponding to the read command from the non-volatile memory device, determining whether an error of the first read data is uncorrectable, and updating offset information of a history table in the storage controller based on the first distribution information, in response to determining that the error of the first read data is correctable.

Abstract: A display device including a pixel circuit, an insulation layer covering the pixel circuit, an etching prevention layer disposed on the insulation layer, a first guide layer, a second guide layer, a first electrode, a second electrode, and a light emitting element. The first guide layer and the second guide layer may be disposed on the etching prevention layer and spaced apart from each other. The first electrode may be disposed on the first guide layer and electrically connected to the pixel circuit. The second electrode may be disposed on the first guide layer and insulated from the first electrode. The light emitting element may be in contact with the top surface of the etching prevention layer, disposed between the first guide layer and the second guide layer on a plane, and electrically connected to the first electrode and the second electrode.

Abstract: Disclosed is a method of operating a storage controller which communicates with a non-volatile memory device. The method includes outputting a first command including a request for on-chip valley search (OVS) count data of a memory region of the non-volatile memory device to the non-volatile memory device, wherein the OVS count data include a first count value of a first read voltage and a second count value of a second read voltage, receiving the OVS count data from the non-volatile memory device, determining a first error count value for the first read voltage and a second error count value for the second read voltage, based on the OVS count data, and determining a subsequent operation, based on the first and second error count values.

Abstract: A display device includes a substrate, a first electrode disposed on the substrate, a second electrode disposed on the substrate and spaced apart from the first electrode, a plurality of first protruding electrodes disposed on the first electrode, a plurality of second protruding electrodes disposed on the second electrode, and a plurality of light emitting elements electrically connected to the plurality of first protruding electrodes and the plurality of second protruding electrodes.

Abstract: Provided is a display device including a substrate, a first electrode disposed on the substrate, a second electrode disposed on the substrate and spaced apart from the first electrode, a plurality of first sub-insulating layers extending in a first direction, disposed on the substrate and on the first and second electrodes, and arranged in a second direction crossing the first direction, and a plurality of light emitting elements disposed between the first sub-insulating layers and electrically connected to the first electrode and the second electrode.

Abstract: Disclosed is a storage controller which includes a history table and communicates with a non-volatile memory device. A method of operating the storage controller includes determining whether history data of a target memory block are registered at the history table, providing a history read request for the target memory block based on the history data when it is determined that the history data are registered, receiving first raw data corresponding to the history read request from the non-volatile memory device, generating skew information of the target memory block based on the first raw data and the history data, and determining whether to perform a read reclaim operation of the target memory block, based on the skew information.

Abstract: A display device includes a pixel circuit, a first insulating layer covering the pixel circuit, a first electrode disposed on the first insulating layer, a second electrode disposed on the first insulating layer and spaced apart from the first electrode in a first direction, and a light emitting element electrically connected to the first electrode and the second electrode and disposed between the first electrode and the second electrode. A recess is provided in a first region of the first insulating layer between the first electrode and the second electrode when viewed in a plan view, and a width of the recess in the first direction is greater than a length of the light emitting element in the first direction. The first electrode and the second electrode do not overlap the recess when viewed in a plan view.

Abstract: Disclosed is a method of operating a storage controller which communicates with a non-volatile memory device. The method includes outputting a first command including a request for on-chip valley search (OVS) count data of a memory region of the non-volatile memory device to the non-volatile memory device, wherein the OVS count data include a first count value of a first read voltage and a second count value of a second read voltage, receiving the OVS count data from the non-volatile memory device, determining a first error count value for the first read voltage and a second error count value for the second read voltage, based on the OVS count data, and determining a subsequent operation, based on the first and second error count values.

Abstract: Disclosed is a method of operating a storage controller which communicates with a non-volatile memory device. The method includes outputting a first command including a request for on-chip valley search (OVS) count data of a memory region of the non-volatile memory device to the non-volatile memory device, wherein the OVS count data includes a first count value and a second count value of a first read voltage and a third count value and a fourth count value of a second read voltage, receiving the OVS count data from the non-volatile memory device, determining a distribution type of the memory region to be a predicted distribution type, from among a plurality of distribution types, based on the OVS count data, and determining a subsequent operation, based on the predicted distribution type.

Abstract: A display device includes a substrate, a first electrode disposed on the substrate, a second electrode disposed on the substrate and spaced apart from the first electrode, a plurality of first protruding electrodes disposed on the first electrode, a plurality of second protruding electrodes disposed on the second electrode, and a plurality of light emitting elements electrically connected to the plurality of first protruding electrodes and the plurality of second protruding electrodes.

Abstract: A display device includes a substrate, a first electrode disposed on the substrate, a second electrode disposed on the substrate and spaced apart from the first electrode, a plurality of first protruding electrodes disposed on the first electrode, a plurality of second protruding electrodes disposed on the second electrode, and a plurality of light emitting elements electrically connected to the plurality of first protruding electrodes and the plurality of second protruding electrodes.