Abstract: The present invention relates to a positive electrode active material for a lithium secondary battery and a lithium secondary battery including the same. The positive electrode active material according to the present invention reduces the specific surface area and grain boundary of a secondary particle in which a side reaction with an electrolyte solution occurs to improve the high-temperature stability of the positive electrode active material and reduce gas generation caused by the positive electrode active material.

Abstract: The present invention relates to a positive electrode active material and a lithium secondary battery including the same, and more particularly, to a bimodal-type positive electrode active material including a first lithium composite oxide, which is a small particle, and a second lithium composite oxide, which is a large particle, these particles having different particle diameters, wherein the positive electrode active material makes it possible to prevent deterioration in electrochemical properties and stability thereof, which are generated due to non-uniform formation of a coating layer at least partially coating surfaces of the small and large particles, a positive electrode including the positive electrode active material, and a lithium secondary battery using the same.

Abstract: A semiconductor device may include a first film and a second film defining parts of a trench, a plug conductive film, a via, and a wiring in the trench. The trench may include a second sub-trench having a second width below a first sub-trench having a first width. The plug conductive film may extend from a first side of the first film to penetrate a bottom face of the trench. An uppermost face of the plug conducive film may be in the trench. The via may include an insulating liner between the plug conductive film and the first film. The uppermost face of the plug conductive film and at least a part of a side wall of the plug conductive film may be in contact with the wiring. An upper face of the insulating liner may be exposed by a bottom face of the second sub-trench.

Abstract: An optional key map operation and apparatus of a portable terminal are provided for compensating for the fixedness of a key map to facilitate generating input signals. A method for operating an optional key map of a portable terminal according to the present invention includes displaying at least one basic key map generated according to a predetermined standard, and displaying at least one optional key map linked to the at least one basic key map along with the at least one basic key map.

Abstract: An optional key map operation and apparatus of a portable terminal are provided for compensating for the fixedness of a key map to facilitate generating input signals. A method for operating an optional key map of a portable terminal according to the present invention includes displaying at least one basic key map generated according to a predetermined standard, and displaying at least one optional key map linked to the at least one basic key map along with the at least one basic key map.

Abstract: Disclosed is an electronic ballast for a HID lamp of a high wattage. A conventional AC voltage is filtered for rejecting a noise and is full-wave rectified. The rectified voltage is provided to a power-factor correction circuit. The power-factor correction circuit produces a boosted DC voltage with a high power-factor by charging capacitors while the rectified voltage transferred by a transformer is switched in a high frequency by a MOSFET. A high-frequency driving circuit produces a charge voltage with the boosted DC voltage, flows a discharge current by alternately switching in a high-frequency two switching circuits which use bipolar transistors coupled in a half-bridge type to discharge the charge voltage, and provides a driving power to the HID lamp while generating a resonance with an energy transferred by the discharge current. In order to drive a HID lamp of a high rating power, the switching circuits further includes transformers which enhance base currents of the bipolar transistors, respectively.