Abstract: According to the present invention, provided is a Dutch coffee capsule comprising: a cylindrical cylinder (10) for accommodating coffee grains (G); a coffee extraction part (20) which is coupled to one end of the cylinder (10) such that a coffee extract flows out; a water inlet part (30) which is coupled to the other end of the cylinder (10) such that water enters therethrough; and a compressive spray part (40) which applies a compressive force to the accommodated coffee grains (G) by coming into close contact with an inner wall of the cylinder (10), and which enables a uniform amount of water to permeate therethrough.

Abstract: A mask for crystallizing silicon includes a first, a second, and a third pattern part arranged in a longitudinal direction, each of the first, second, and third pattern parts including a plurality of unit blocks for transmitting and blocking a portion of light. At least two of the first, second and third pattern parts have a corresponding pattern to each other. Advantageously, scans using the aforementioned mask effectively remove a boundary on the silicon formed by the difference in the amount of laser beam irradiation received by the silicon, thereby improving electronic characteristics of the silicon.

Abstract: A mask for crystallizing silicon includes a first, a second, and a third pattern part arranged in a longitudinal direction, each of the first, second, and third pattern parts including a plurality of unit blocks for transmitting and blocking a portion of light. At least two of the first, second and third pattern parts have a corresponding pattern to each other. Advantageously, scans using the aforementioned mask effectively remove a boundary on the silicon formed by the difference in the amount of laser beam irradiation received by the silicon, thereby improving electronic characteristics of the silicon.

Abstract: A mask for crystallizing silicon includes a first, a second, and a third pattern part arranged in a longitudinal direction, each of the first, second, and third pattern parts including a plurality of unit blocks for transmitting and blocking a portion of light. At least two of the first, second and third pattern parts have a corresponding pattern to each other. Advantageously, scans using the aforementioned mask effectively remove a boundary on the silicon formed by the difference in the amount of laser beam irradiation received by the silicon, thereby improving electronic characteristics of the silicon.

Abstract: A mask for crystallizing silicon includes a first, a second, and a third pattern part arranged in a longitudinal direction, each of the first, second, and third pattern parts including a plurality of unit blocks for transmitting and blocking a portion of light. At least two of the first, second and third pattern parts have a corresponding pattern to each other. Advantageously, scans using the aforementioned mask effectively remove a boundary on the silicon formed by the difference in the amount of laser beam irradiation received by the silicon, thereby improving electronic characteristics of the silicon.

Abstract: A method of fabricating poly crystalline silicon type thin film transistor is disclosed. In the method, before the step of re-crystallization of amorphous silicon to form polycrystalline silicon active pattern, a step for injecting predetermined amount of oxygen atom into the surface part of the amorphous silicon layer. By this addition of step, the surface part of the silicon layer is to be oxidized and the crystal defect in the interface between the gate insulating layer and poly crystalline silicon layer can be cured and the mobility of charge carrier can be improved in the channel of the thin film transistor.

Abstract: A method of fabricating poly crystalline silicon type thin film transistor is disclosed. In the method, before the step of re-crystallization of amorphous silicon to form polycrystalline silicon active pattern, a step for injecting predetermined amount of oxygen atom into the surface part of the amorphous silicon layer. By this addition of step, the surface part of the silicon layer is to be oxidized and the crystal defect in the interface between the gate insulating layer and poly crystalline silicon layer can be cured and the mobility of charge carrier can be improved in the channel of the thin film transistor.

Abstract: A method of fabricating poly crystalline silicon type thin film transistor is disclosed. In the method, before the step of re-crystallization of amorphous silicon to form polycrystalline silicon active pattern, a step for injecting predetermined amount of oxygen atom into the surface part of the amorphous silicon layer. By this addition of step, the surface part of the silicon layer is to be oxidized and the crystal defect in the interface between the gate insulating layer and poly crystalline silicon layer can be cured and the mobility of charge carrier can be improved in the channel of the thin film transistor.

Abstract: A monitor or display screen is disclosed, the display screen including a central screen with a width and lateral sides. A first lateral screen is pivotally attached to one of the lateral sides of the central screen. A second lateral screen is pivotally attached to the other of the lateral sides of the central screen. First and second screens are of substantially the same width as central screen. The pivotal attachment of the first and second screens may include an arc-shaped support structure that is hingedly attached at one end to the central screen. The support structure defines a plurality of slots therein and the structure is attached to the first or second screens with a plurality of bolts that engage in the slots. The bolts are adapted to slide in the slots thereby allowing for adjustment of the first and second screens relative to the central screen. First and second screens may be folded one-on-top-of-the-other over the central screen so that a compact unit is formed.

Abstract: A method of fabricating poly crystalline silicon type thin film transistor is disclosed. In the method, before the step of re-crystallization of amorphous silicon to form polycrystalline silicon active pattern, a step for injecting predetermined amount of oxygen atom into the surface part of the amorphous silicon layer. By this addition of step, the surface part of the silicon layer is to be oxidized and the crystal defect in the interface between the gate insulating layer and poly crystalline silicon layer can be cured and the mobility of charge carrier can be improved in the channel of the thin film transistor.

Abstract: A pixel in IPS LCDs according to the embodiments of the present invention is symmetrical with respect to a data line and a gate line. The data line longitudinally passes through the center of the pixel, and the gate line transversely passes through the center of the pixel. A pixel is confined to an area enclosed by two adjacent transverse common electrode lines and four longitudinal common electrodes which are branches of the common electrode lines. Among the four common electrodes, two are connected to one of the two common electrode lines, and the other two are connected to the other of the common electrode lines. Each pixel has two longitudinal common electrodes overlapped with the data line, four longitudinal pixel electrodes arranged between the common electrodes and two two-channel TFTs. Each pixel further has two storage electrodes overlapped with the pixel electrodes and electrically connected to the gate line. The storage electrode and the pixel electrode together form a storage capacitor.

Abstract: A pixel in IPS LCDs according to the embodiments of the present invention is symmetrical with respect to a data line and a gate line. The data line longitudinally passes through the center of the pixel, and the gate line transversely passes through the center of the pixel. A pixel is confined to an area enclosed by two adjacent transverse common electrode lines and four longitudinal common electrodes which are branches of the common electrode lines. Among the four common electrodes, two are connected to one of the two common electrode lines, and the other two are connected to the other of the common electrode lines. Each pixel has two longitudinal common electrodes overlapped with the data line, four longitudinal pixel electrodes arranged between the common electrodes, and two two-channel TFTs. Each pixel further has two storage electrodes overlapped with the pixel electrodes and electrically connected to the gate line. The storage electrode and the pixel electrode together form a storage capacitor.

Abstract: A panel for a liquid crystal display (LCD) includes a substrate having a plurality of pixel areas defined thereon. A first alignment layer is formed on the substrate, the first alignment layer providing a first pretilt angle for a liquid crystal material. A plurality of spaced apart second alignment regions is formed on the first alignment layer, the second alignment regions providing a second pretilt angle for the liquid crystal material, respective second alignment regions being separated by a portion of the first alignment layer such that a respective pixel area is covered by the first alignment region and partially covered by a second alignment region. Portions of the first alignment layer and the second alignment regions covering respective adjacent pixel areas have grooves formed therein which are substantially aligned along respective first and second directions. The first and second directions preferably are perpendicular.

Abstract: An apparatus for rubbing the alignment layer applied to a thin film transistor and a color filter glass plate of a liquid crystal display to set the molecular orientation of the liquid crystals includes a cylindrical roll with a round peripheral surface covered by a piled fabric having pile, and a table for supporting the thin film transistor or color filter glass plate. The cylindrical roll is rotated with the pile contacting the alignment layer of the thin film transistor or color filter glass plate while moving the table relative to the cylindrical roll so that the surface of the alignment layer is rubbed. The pile includes a plurality of properly defined sections having alternate short and long pile so as to alternately vary the rubbing strength of the piled fabric against the alignment layer.