Patents by Inventor Hyun-Do Yoon

Hyun-Do Yoon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Memory device and fabrication method thereof
    Patent number: 5977580
    Abstract: A memory device of the present invention allows high integration, improved operational speed, larger capacitance, improved isolation and/or reduced leakage current. The memory device includes a plurality of transistors parallel to each other and formed above a substrate. A bit line is perpendicular to each of the plurality of transistors, and is coupled to the transistors. A predetermined portion of each transistor is a storage node for a capacitor, and a plate surrounds the predetermined portion through a dielectric film.
    Type: Grant
    Filed: November 15, 1996
    Date of Patent: November 2, 1999
    Assignee: LG Semicon Co., Ltd.
    Inventor: Hyun-Do Yoon