Abstract: An embodiment of the present invention includes: a gallium nitride substrate; and a light-emitting structure disposed on the other surface of the substrate, wherein the substrate includes a plurality of light extraction structures formed on one surface thereof, the thickness of the substrate is 80 ?m or more, and the average height of the plurality of light extraction structures is 10 ?m or more.

Abstract: A light emitting device according to embodiments includes a substrate, a light emitting structure disposed under the substrate and including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, a submount disposed to face the substrate, first and second metal pads disposed on the submount to be spaced apart from each other, a first bump disposed on the first metal pad, a plurality of second bumps disposed on the second metal pad to be spaced apart from each other, a first ohmic layer interposed between the first conductive semiconductor layer and the first bump, a second ohmic layer interposed between the second conductive semiconductor layer and the plurality of second bumps, a first spreading layer interposed between the first ohmic layer and the first bump, a second spreading layer interposed between the second ohmic layer and the plurality of second bumps, and a current blocking layer disposed in a maximum heating area of the second ohmic layer overlapping

Abstract: Disclosed in an embodiment is a light emitting device comprising: a substrate; a light emitting structure, which includes a first semiconductor layer, an active layer, a second semiconductor layer, and a first groove penetrating through the second semiconductor layer and the active layer and disposed up until a partial region of the first semiconductor layer; a reflective electrode layer covering a lower part of the second semiconductor layer and a sidewalls of the first groove; a first ohmic electrode disposed inside the first groove and electrically connected to the first semiconductor layer; and a first insulation layer for electrically insulating the first ohmic electrode and the reflective electrode layer.

Abstract: Disclosed in an embodiment is a light emitting device comprising: a substrate; a light emitting structure, which includes a first semiconductor layer, an active layer, a second semiconductor layer, and a first groove penetrating through the second semiconductor layer and the active layer and disposed up until a partial region of the first semiconductor layer; a reflective electrode layer covering a lower part of the second semiconductor layer and a sidewalls of the first groove; a first ohmic electrode disposed inside the first groove and electrically connected to the first semiconductor layer; and a first insulation layer for electrically insulating the first ohmic electrode and the reflective electrode layer.

Abstract: A light emitting device according to embodiments includes a substrate, a light emitting structure disposed under the substrate and including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, a submount disposed to face the substrate, first and second metal pads disposed on the submount to be spaced apart from each other, a first bump disposed on the first metal pad, a plurality of second bumps disposed on the second metal pad to be spaced apart from each other, a first ohmic layer interposed between the first conductive semiconductor layer and the first bump, a second ohmic layer interposed between the second conductive semiconductor layer and the plurality of second bumps, a first spreading layer interposed between the first ohmic layer and the first bump, a second spreading layer interposed between the second ohmic layer and the plurality of second bumps, and a current blocking layer disposed in a maximum heating area of the second ohmic layer overlapping

Abstract: An embodiment of the present invention includes: a gallium nitride substrate; and a light-emitting structure disposed on the other surface of the substrate, wherein the substrate includes a plurality of light extraction structures formed on one surface thereof, the thickness of the substrate is 80 ?m or more, and the average height of the plurality of light extraction structures is 10 ?m or more.

Abstract: A light emitting device includes a body having a cavity and a step difference structure around the cavity, a plurality of electrodes in the cavity, a light emitting chip in the cavity, a transparent window having an outer portion provided on the step difference structure to cover the cavity, and an adhesive member between the transparent window and the body. The adhesive member includes a first adhesive member between an outer bottom surface of the transparent window and a bottom of the step difference structure and a second adhesive member between the outer portion of the transparent window and the body.

Abstract: A light emitting device having an enhanced surface property and an electrical property is provided. The light emitting device includes a light emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer, a first electrode disposed on one side of the light emitting structure and electrically connected to the first semiconductor layer, a second electrode disposed on one side of the light emitting structure and electrically connected to the second semiconductor layer, and an ohmic contact including a first layer disposed between the second electrode and the second semiconductor layer and having aluminum (Al), a second layer including at least one MxAly alloy formed by a reaction with Al included in the first layer, and a third layer disposed on the second layer and having gold (Au) is provided.

Abstract: A light emitting device is provided that may include a substrate, a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer provided on the substrate, a first electrode on the first conductive semiconductor layer, and a schottky guide ring configured to surround the first electrode and directly connect with the first conductive semiconductor layer.

Abstract: A light emitting device includes a light emitting structure provided over a first substrate and including at least a first conductive semiconductor layer; an active layer and a second conductive semiconductor layer. A first electrode is provided over the first conductive semiconductor layer; and a second electrode is provided over the second conductive semiconductor layer. A MIM (metal-insulator-metal) structure is provided over at least one of the first and second electrodes.

Abstract: A light emitting device includes a semiconductor structure layer including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer. A plurality of lower refractive layers is provided on an outer surface of the semiconductor structure layer. The lower refractive layers includes a first lower refractive layer having a first refractive index lower than a refractive index of the semiconductor structure layer on a surface of the semiconductor structure layer, and a second lower refractive layer having a second refractive index lower than the first refractive index on an outer surface of the first lower refractive layer. The second refractive index of the second lower refractive layer is 1.5 or less, and the second lower refractive layer is provided on an outer surface thereof with a plurality of protrusions. The second lower refractive layer includes a plurality of metallic oxide powders.

Abstract: A light emitting device having an enhanced surface property and an electrical property is provided. The light emitting device includes a light emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer, a first electrode disposed on one side of the light emitting structure and electrically connected to the first semiconductor layer, a second electrode disposed on one side of the light emitting structure and electrically connected to the second semiconductor layer, and an ohmic contact including a first layer disposed between the second electrode and the second semiconductor layer and having aluminum (Al), a second layer including at least one MxAly alloy formed by a reaction with Al included in the first layer, and a third layer disposed on the second layer and having gold (Au) is provided.

Abstract: A light emitting device is provided that may include a substrate, a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer provided on the substrate, a first electrode on the first conductive semiconductor layer, and a schottky guide ring configured to surround the first electrode and directly connect with the first conductive semiconductor layer.

Abstract: A light emitting device includes a body having a cavity and a step difference structure around the cavity, a plurality of electrodes in the cavity, a light emitting chip in the cavity, a transparent window having an outer portion provided on the step difference structure to cover the cavity, and an adhesive member between the transparent window and the body. The adhesive member includes a first adhesive member between an outer bottom surface of the transparent window and a bottom of the step difference structure and a second adhesive member between the outer portion of the transparent window and the body.

Abstract: A light emitting device (LED), an LED package, and a lighting system including the LED package are provided. The light emitting device (LED) may include a light emitting structure, a carrier injection layer, and an electrode layer. The light emitting structure may include a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer. The carrier injection layer may be positioned over the light emitting structure, and the electrode layer may be positioned over the carrier injection layer.

Abstract: A light emitting device is described, including a second conductive type semiconductor layer; an active layer over the second conductive type semiconductor layer; a first conductive type semiconductor layer over the active layer; a second electrode in a first region under the second conductive type semiconductor layer; a current blocking layer including a metal; and a first electrode over the first conductive type semiconductor layer. Further, the first electrode has at least one portion that vertically overlaps the current blocking layer.

Abstract: A light-emitting device, according to one embodiment, comprises a light-emitting structure having a silicon substrate, a first conductive type semiconductor layer disposed on the silicon substrate, an active layer, and a second conductive type semiconductor layer, a conductive layer facing the active layer between the silicon substrate and the first conductive type semiconductor layer, a first electrode which is disposed on the first conductive type semiconductor layer, penetrates or bypasses the first conductive type semiconductor layer, and is electrically connected to the conductive layer, and a second electrode disposed on the second conductive type semiconductor layer.

Abstract: A light emitting device includes a semiconductor structure layer including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer. A plurality of lower refractive layers is provided on an outer surface of the semiconductor structure layer. The lower refractive layers includes a first lower refractive layer having a first refractive index lower than a refractive index of the semiconductor structure layer on a surface of the semiconductor structure layer, and a second lower refractive layer having a second refractive index lower than the first refractive index on an outer surface of the first lower refractive layer. The second refractive index of the second lower refractive layer is 1.5 or less, and the second lower refractive layer is provided on an outer surface thereof with a plurality of protrusions. The second lower refractive layer includes a plurality of metallic oxide powders.

Abstract: A light emitting device is described, including a second conductive type semiconductor layer; an active layer over the second conductive type semiconductor layer; a first conductive type semiconductor layer over the active layer; a second electrode in a first region under the second conductive type semiconductor layer; a current blocking layer including a metal; and a first electrode over the first conductive type semiconductor layer. Further, the first electrode has at least one portion that vertically overlaps the current blocking layer.

Abstract: A light emitting device includes a light emitting structure provided over a first substrate and including at least a first conductive semiconductor layer; an active layer and a second conductive semiconductor layer. A first electrode is provided over the first conductive semiconductor layer; and a second electrode is provided over the second conductive semiconductor layer. A MIM (metal-insulator-metal) structure is provided over at least one of the first and second electrodes.