Patents by Inventor Hyun Goo
Hyun Goo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20250230502Abstract: An Interferon Gamma Inducible Protein 16 (IFI16) mutant gene and its use as a marker for predicting, diagnosing, or prognosticating risk or severity of chronic liver disease is described. As a result of performing genomic analysis on NAFLD and NASH patient groups, it was confirmed that the frequency of IFI16 single-nucleotide variants (SNVs) including rs2276404, rs73021847, rs7532207, and rs6940 was increased, and the expression of the IFI16 mutant gene was increased depending on the disease stage of liver disease. The IFI16 SNV was highly expressed in infiltrating macrophages, playing a role in macrophage-induced inflammatory processes, and the IFI16 variant bound more strongly to dsDNA than wild-type IFI16, exacerbating the impaired mitochondrial DNA-sensing response signaling of the IFI16-PYCARD-CASP1 pathway. Thus, the IFI16 mutant gene may be used for predicting, diagnosing, or prognosticating risk or severity of chronic liver disease.Type: ApplicationFiled: March 30, 2023Publication date: July 17, 2025Applicants: NATIONAL CANCER CENTER, AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION, SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION, DONG-A UNIVERSITY RESEARCH FOUNDATION FOR INDUSTRY-ACADEMY COOPERATION, ON HOSPITALInventors: Yeon Su LEE, Gaeul PARK, Yong Sun LEE, Hyun Goo WOO, Do Yoon KIM, Rho Hyun SEONG, Yang Hyun BAEK, Sang Young HAN
-
Publication number: 20250174612Abstract: An exemplary semiconductor device can comprise (a) a substrate comprising a substrate dielectric structure between the substrate top side and the substrate bottom side, conductive pads at the substrate bottom side, and a substrate cavity through the substrate dielectric structure, (b) a base electronic component comprising inner short bumps; outer short bumps bounding a perimeter around the inner short bumps, and tall bumps between the outer short bumps and an edge of the base component top side, and (c) a mounted electronic component coupled to the inner short bumps of the base electronic component. The tall bumps of the base component can be coupled to the conductive pads of the substrate. The mounted electronic component can be located in the substrate cavity. The substrate bottom side can cover at least a portion of the outer short bumps of the base electronic component. Other examples and related methods are disclosed herein.Type: ApplicationFiled: December 2, 2024Publication date: May 29, 2025Applicant: Amkor Technology Singapore Holding Pte. Ltd.Inventors: Hyun Goo Cha, Dong Hee Kang, Sang Yun Ma, Sang Hyeok Cho, Jae Yeong Bae, Ron Huemoeller
-
POLISHING COMPOSITION FOR SEMICONDUCTOR PROCESS AND MANUFACTURING METHOD OF SUBSTRATE USING THE SAME
Publication number: 20250145860Abstract: A polishing composition for a semiconductor process includes polishing particles, a polishing pad protectant, and a fluorinated surfactant. The polishing composition for the semiconductor process has an Rm/e value of 2.5% or less, which is a ratio of a number of defects derived from an organic substance as calculated by Equation 1 below. Rm / e = Dm De × 100 ? ( % ) [ Equation ? 1 ] In the Equation 1, a De value is a number of defects detected from a top surface of a substrate after polishing the top surface with the polishing composition for the semiconductor process and etching back the top surface, and a Dm value is a number of defects derived from the organic substance among 100 defects randomly selected from the defects detected from the top surface after the polishing and etching back of the top surface. In these cases, polished and etched surfaces can prevent contamination by particles, especially organic particles.Type: ApplicationFiled: November 6, 2024Publication date: May 8, 2025Applicants: SK enpulse Co., Ltd., SK HYNIX INC.Inventors: Deok Su HAN, Jong Young CHO, Woo Joo KIM, Hyun Goo KANG, Dong Kyun LEE -
Publication number: 20250145861Abstract: A polishing composition for a semiconductor process according to one embodiment of the present disclosure includes a polishing particle and a corrosion inhibitor. The corrosion inhibitor includes a first corrosion inhibitor, which is an amino azole-based compound and a second corrosion inhibitor, which is a diazole-based compound. The polishing composition for a semiconductor process has a pH of 2 to 5. A static etch rate for a tungsten film of the polishing composition for a semiconductor process is 6 ?/min or less. When polishing a substrate comprising a tungsten film and the silicon oxide film, such a polishing composition may provide a defect-reduced polished surface while exhibiting excellent polishing rate for a silicon oxide film.Type: ApplicationFiled: November 5, 2024Publication date: May 8, 2025Applicants: SK enpulse Co., Ltd., SK HYNIX INC.Inventors: Deok Su HAN, Jong Young CHO, Woo Joo KIM, Hyun Goo KANG, Dong Kyun LEE
-
Publication number: 20250054853Abstract: In one example, a semiconductor device comprises a first dielectric comprising a first side and a second side, a first conductive tier in the first dielectric and comprising a first conductive path integral with a first conductive via, wherein the first conductive path and the first conductive via extend between the first side and the second side of the first dielectric, a second dielectric comprising a first side and a second side, and a first barrier covering the first conductive tier and covering the first dielectric, wherein the first barrier is between the second side of the first dielectric and the first side of the second dielectric. The first conductive tier comprises a trench barrier coupled with the first dielectric structure. Other examples and related methods are also disclosed herein.Type: ApplicationFiled: August 8, 2023Publication date: February 13, 2025Applicant: Amkor Technology Singapore Holding Pte. Ltd.Inventors: Sang Hyun Jin, Hyun Goo Cha, Yun Kyung Jeong, Jin Suk Jeong
-
Publication number: 20250026960Abstract: The present invention relates to a polishing slurry composition, and more specifically to a polishing slurry composition for polysilicon polishing, the composition comprising: colloidal silica abrasive particles; a quaternary ammonium cationic monomer; and an acidic material.Type: ApplicationFiled: December 1, 2022Publication date: January 23, 2025Applicant: KCTECH CO.,LTD.Inventors: Bo Hyeok CHOI, Hyun Goo KONG, Ji Hye KIM
-
Patent number: 12187919Abstract: A polishing slurry composition is provided. The polishing slurry composition includes polishing particles, a first polishing inhibitor containing a hydrophobic amino acid, and a second polishing inhibitor containing a cyclic polymer, and the first polishing inhibitor and the second polishing inhibitor are different.Type: GrantFiled: December 16, 2021Date of Patent: January 7, 2025Assignee: KCTECH Co., Ltd.Inventors: Jin Sook Hwang, Hyun Goo Kong, Yun Su Kim
-
Publication number: 20250002755Abstract: The present invention relates to a slurry composition for metal polishing, comprising: colloidal silica; and an oxidizing agent; and at least one selected from among a polishing catalyst, a metal polishing enhancer, a polishing inhibitor, and a dishing and erosion reducer, wherein the colloidal silica has a particle size distribution of colloidal silica according to equation 1.Type: ApplicationFiled: August 8, 2022Publication date: January 2, 2025Applicant: KCTECH CO., LTD.Inventors: Jin Sook HWANG, Hyun Goo KONG, Yun Su KIM
-
Publication number: 20240413056Abstract: A capacitor component includes a substrate having first and second surfaces opposing each other, a first interlayer disposed on the first surface of the substrate, the first interlayer including a first trench, a first trench capacitor disposed in the first trench, a second interlayer disposed on the second surface of the substrate, the second interlayer including a second trench, a second trench capacitor disposed in the second trench, and a through-via passing through the substrate to connect the first trench capacitor and the second trench capacitor to each other.Type: ApplicationFiled: February 6, 2024Publication date: December 12, 2024Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.Inventors: Chi Hyeon JEONG, Hyun Sang KWAK, Seong Hwan LEE, Hyun Goo JEON
-
Patent number: 12159863Abstract: An exemplary semiconductor device can comprise (a) a substrate comprising a substrate dielectric structure between the substrate top side and the substrate bottom side, conductive pads at the substrate bottom side, and a substrate cavity through the substrate dielectric structure, (b) a base electronic component comprising inner short bumps; outer short bumps bounding a perimeter around the inner short bumps, and tall bumps between the outer short bumps and an edge of the base component top side, and (c) a mounted electronic component coupled to the inner short bumps of the base electronic component. The tall bumps of the base component can be coupled to the conductive pads of the substrate. The mounted electronic component can be located in the substrate cavity. The substrate bottom side can cover at least a portion of the outer short bumps of the base electronic component. Other examples and related methods are disclosed herein.Type: GrantFiled: November 27, 2023Date of Patent: December 3, 2024Assignee: Amkor Technology Singapore Holding Pte. Ltd.Inventors: Hyun Goo Cha, Dong Hee Kang, Sang Yun Ma, Sang Hyeok Cho, Jae Yeong Bae, Ron Huemoeller
-
Publication number: 20240348137Abstract: An apparatus for operating simultaneously as DC (Direct Current) motor and DC generator is disclosed. Four permanent magnets (101, 102, 103, 104) are placed to be able to rotate with a shaft and two coils (201, 202) are placed outside the circumference of the permanent magnets and one secondary cell battery (301) is used to supply electric current to the coils. One device (501) for making electric current flow alternately in the coils is placed. If electric current flows in a first coil (201) by the secondary cell battery, the shaft rotates and the rotating permanent magnets generate electric power in a second coil (202). Electric current flows from the second coil to the first coil. Electric current always flows in one direction in the coils as the shaft rotates in one direction.Type: ApplicationFiled: June 27, 2022Publication date: October 17, 2024Inventor: Jei Hyun GOO
-
Patent number: 12094733Abstract: Disclosed is a substrate treatment apparatus including a rotation unit that supports and rotates a substrate, a chemical discharge unit that discharges a chemical solution to the rotation unit, a chemical recovery unit disposed close to the rotation unit and configured to recover the chemical solution scattering from the rotation unit, and a laser irradiation unit that applies a laser beam to the substrate and heats the substrate.Type: GrantFiled: October 17, 2020Date of Patent: September 17, 2024Assignee: SEMES CO., LTD.Inventors: Young Dae Chung, Won Geun Kim, Jee Young Lee, Ji Hoon Jeong, Tae Shin Kim, Se Hoon Oh, Pil Kyun Heo, Hyun Goo Park
-
Publication number: 20240271006Abstract: A slurry composition may include an abrasive, a solvent, and polyol. The abrasive may include any one of metal oxide, metal nitride, metal oxynitride, and a combination thereof. The polyol may have about 0.01 mM to about 500 mM of a concentration. Thus, high polishing selectivities may be provided between a B—Si layer, a TiN layer and a SiN layer by controlling a polishing rate of the TIN layer.Type: ApplicationFiled: August 31, 2023Publication date: August 15, 2024Inventors: Cheol Min Shin, Hyun Goo Kang, Ungyu Paik, Taeseup Song, Hojin Jeong
-
Publication number: 20240262674Abstract: A cold water tank for a direct water purifier is provided.Type: ApplicationFiled: February 8, 2022Publication date: August 8, 2024Applicant: COWAY CO., LTD.Inventors: Hee Joo KANG, Hee Do JUNG, Chan Jung PARK, Jong Hwan LEE, Hyun Kang LEE, Hyun Goo KIM, Yoo Won OH, Da Woon JUNG, Min Chul YONG, Dong Min OH, Seong Min PARK
-
Publication number: 20240222154Abstract: A substrate processing apparatus using a supercritical fluid that can remove floating particles is provided. The substrate processing apparatus comprises a vessel including a processing space for processing a substrate, and a first vessel and a second vessel configured to be combined to be open and closed, wherein the first vessel and the second vessel seal the processing space in a closed position, and the first vessel and the second vessel open the processing space in an open position; a clamping unit configured to clamp the first vessel and the second vessel in the closed position; and an intake unit configured to intake a particle by including an intake member positioned to correspond to an open space between the first vessel and the second vessel in the open position.Type: ApplicationFiled: November 10, 2023Publication date: July 4, 2024Inventors: Won Sik SON, Ho Jong HWANG, Hyun Goo PARK
-
Publication number: 20240222011Abstract: A capacitor component may include: first and second connection conductive layers; a plurality of conductive nanowires respectively connecting the first and second connection conductive layers; a conductive body disposed between the first and second connection conductive layers to have a plurality of through-holes in which the plurality of conductive nanowires are disposed; and a dielectric film disposed so that at least a portion thereof is disposed between the plurality of conductive nanowires and the conductive body in the plurality of through-holes, wherein an aspect ratio, which is a ratio of a length to a width of one of the plurality of conductive nanowires, may be 1000 or more.Type: ApplicationFiled: October 17, 2023Publication date: July 4, 2024Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.Inventors: Hae Suk CHUNG, Woon Kyung LEE, Jung Sub CHOI, Gwang Pyo PARK, Ji Hoon PARK, Jun Goo WON, Hyun Goo JEON, Kwang Mook LEE
-
Publication number: 20240198658Abstract: There are provided a control unit and a substrate treating apparatus including the same, which manage the quality and lifespan of an inkjet head unit based on the position reproducibility of a substrate treating solution ejected by the inkjet head unit. The substrate treating apparatus includes: a process treatment unit supporting a substrate; an inkjet head unit ejecting a substrate treating solution onto the substrate in the form of a droplet; a gantry unit moving the inkjet head unit; and a control unit controlling the inkjet head unit, wherein the control unit determines whether to replace the inkjet head unit based on a position reproducibility of the droplet.Type: ApplicationFiled: December 18, 2023Publication date: June 20, 2024Inventor: Hyun Goo KWON
-
Publication number: 20240170304Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes treating modules having an opening for taking in and taking out a substrate and which are stacked on each other; and an air flow generating member for generating a downward airflow at each treating module, and wherein the air flow generating member includes: a pan unit configured to supply an air; a spray unit configured to be provided above the treating module and which sprays an air supplied from the pan unit; and an exhaust unit configured to exhaust an air sprayed by the spray unit to outside of the treating module.Type: ApplicationFiled: November 21, 2023Publication date: May 23, 2024Applicant: SEMES CO., LTD.Inventors: Ho Jong HWANG, Hyun Goo PARK, Hyo Won YANG, Ki-Moon KANG, Sang Min LEE, Se Hoon OH, Won Sik SON
-
Publication number: 20240115982Abstract: Provided is a filter unit, including a frame fixed along a perimeter of an opening in a wall, a housing connected to the frame to form an inner space, a cover plate installed on the frame to cover the inner space, and a filter box provided with a filter and installed in the inner space.Type: ApplicationFiled: January 21, 2022Publication date: April 11, 2024Applicant: Samsung Biologics Co., Ltd.Inventors: Joo Soung KIM, Ja Hyun GOO
-
Publication number: 20240088114Abstract: An exemplary semiconductor device can comprise (a) a substrate comprising a substrate dielectric structure between the substrate top side and the substrate bottom side, conductive pads at the substrate bottom side, and a substrate cavity through the substrate dielectric structure, (b) a base electronic component comprising inner short bumps; outer short bumps bounding a perimeter around the inner short bumps, and tall bumps between the outer short bumps and an edge of the base component top side, and (c) a mounted electronic component coupled to the inner short bumps of the base electronic component. The tall bumps of the base component can be coupled to the conductive pads of the substrate. The mounted electronic component can be located in the substrate cavity. The substrate bottom side can cover at least a portion of the outer short bumps of the base electronic component. Other examples and related methods are disclosed herein.Type: ApplicationFiled: November 27, 2023Publication date: March 14, 2024Applicant: Amkor Technology Singapore Holding Pte. Ltd.Inventors: Hyun Goo Cha, Dong Hee Kang, Sang Yun Ma, Sang Hyeok Cho, Jae Yeong Bae, Ron Huemoeller