Abstract: Provided is a display device comprising a substrate, a first data line and a second data line disposed on the substrate and extended in a first direction, an anode electrode disposed on the first data line and the second data line, a pixel-defining film disposed over the anode electrode and defining an emission area, an organic light-emitting layer disposed on the anode electrode, and a cathode electrode disposed on the organic light-emitting layer, wherein each of the first data line and the second data line has a curved shape when viewed from a top where the first anode electrode and the second anode electrode overlap the anode electrode.

Abstract: A display device includes a light emitting element including a pixel electrode, a light emitting layer, and a common electrode. A capping layer is disposed on the common electrode. An auxiliary layer is disposed on the capping layer. A thin film encapsulation layer includes a first encapsulation layer, a second encapsulation layer, and a third encapsulation layer. The first encapsulation layer includes a first inorganic insulating layer including silicon nitride; a second inorganic insulating layer including silicon oxide; and a third inorganic insulating layer including silicon oxynitride. The auxiliary layer has a thickness of 200 ? to 1400 ?, the first inorganic insulating layer has a thickness of 400 ? to 3500 ?, the second inorganic insulating layer has a thickness of 200 ? to 2400 ?, and the third inorganic insulating layer has a thickness of 4000 ? or more.

Abstract: A display device includes: a base layer; a pixel defining film on the base layer; a light emitting element including a light emitting layer in an opening in the pixel defining film; a capping layer on the light emitting element; and an encapsulation layer on the capping layer. The encapsulation layer includes: a first optical layer on the capping layer; a second optical layer on the first optical layer; and a stabilization layer on the second optical layer. A thickness of the stabilization layer is greater than a thickness of the first optical layer and a thickness of the second optical layer. A refractive index of the capping layer is higher than a refractive index of the first optical layer, and a refractive index of the second optical layer is higher than the refractive index of the first optical layer and a refractive index of the stabilization layer.

Abstract: A method is disclosed for increasing an intensity of a signal detected in a spectroscopy device using a vapor cell and a spectroscopy device using the same. An operation method of the spectroscopy device may include: causing a first light for exciting an atom trapped in a vapor cell in a first hyperfine ground state to a first excited state to be incident on the vapor cell; causing a second light for exciting an atom trapped in the vapor cell in a second hyperfine ground state to a second excited state to be incident on the vapor cell; causing a third light for exciting the atom in the second excited state to a third excited state to be incident on the vapor cell; and detecting fluorescence which is emitted while the atom in the third excited state returns to the ground state.

Abstract: A method is disclosed for increasing an intensity of a signal detected in a spectroscopy device using a vapor cell and a spectroscopy device using the same. An operation method of the spectroscopy device may include: causing a first light for exciting an atom trapped in a vapor cell in a first hyperfine ground state to a first excited state to be incident on the vapor cell; causing a second light for exciting an atom trapped in the vapor cell in a second hyperfine ground state to a second excited state to be incident on the vapor cell; causing a third light for exciting the atom in the second excited state to a third excited state to be incident on the vapor cell; and detecting fluorescence which is emitted while the atom in the third excited state returns to the ground state.

Abstract: An embodiment of the inventive concept provides a physics module of a chip-scale atomic clock. The physics module includes: a housing; a laser source disposed in the housing and generating a laser beam; a vapor cell disposed above the laser source to generate a transmitted beam from the laser beam; and a detector disposed above the vapor cell to detect the transmitted beam. Here, the vapor cell may include a plurality of optical patterns configured to polarize the laser beam.

Abstract: An embodiment of the inventive concept provides a physics module of a chip-scale atomic clock. The physics module includes: a housing; a laser source disposed in the housing and generating a laser beam; a vapor cell disposed above the laser source to generate a transmitted beam from the laser beam; and a detector disposed above the vapor cell to detect the transmitted beam. Here, the vapor cell may include a plurality of optical patterns configured to polarize the laser beam.

Abstract: An infrared detector may be configured to detect a wide bandwidth of infrared spectrum using a broadband surface plasmon resonator. The infrared detector may include a substrate; a thermistor member disposed spaced from the substrate, the thermistor member having a resistance value that varies according to temperature; a resonator disposed on the thermistor member, the resonator configured to generate surface plasmon resonance; a pair of thermal legs configured to support the thermistor member such that the thermistor member is disposed spaced from the substrate; and a pair of conductive lead wires respectively disposed on the pair of thermal legs. The conductive lead wires may be configured to transmit signals to the substrate from the thermistor member and the resonator. The resonator may have a plurality of resonant frequencies and be configured to generate the surface plasmon resonance in a plurality of resonant modes.

Abstract: An infrared detector may be configured to detect a wide bandwidth of infrared spectrum using a broadband surface plasmon resonator. The infrared detector may include a substrate; a thermistor member disposed spaced from the substrate, the thermistor member having a resistance value that varies according to temperature; a resonator disposed on the thermistor member, the resonator configured to generate surface plasmon resonance; a pair of thermal legs configured to support the thermistor member such that the thermistor member is disposed spaced from the substrate; and a pair of conductive lead wires respectively disposed on the pair of thermal legs. The conductive lead wires may be configured to transmit signals to the substrate from the thermistor member and the resonator. The resonator may have a plurality of resonant frequencies and be configured to generate the surface plasmon resonance in a plurality of resonant modes.

Abstract: An infrared detector capable of detecting an infrared spectrum having a wide bandwidth using a broadband light absorber. The infrared detector including a substrate, a light absorber disposed apart from the substrate at a distance, and a pair of thermal legs configured to support the light absorber such that the light absorber is spaced apart from the substrate by the distance. The light absorber includes at least one thermistor layer having a resistance value that varies according to temperature and at least two resonator layers disposed on at least one of upper and lower surfaces of the at least one thermistor layer.

Abstract: An infrared detector includes at least one infrared absorber provided on a substrate and a plurality of thermocouples. The at least one infrared absorber may include one of a plasmonic resonator and a metamaterial resonator. The plurality of thermocouples may be configured to generate electromotive forces in response to thermal energy generated by the at least one infrared absorber.

Abstract: An infrared detector includes at least one infrared absorber provided on a substrate and a plurality of thermocouples. The at least one infrared absorber may include one of a plasmonic resonator and a metamaterial resonator. The plurality of thermocouples may be configured to generate electromotive forces in response to thermal energy generated by the at least one infrared absorber.

Abstract: An infrared detector capable of detecting an infrared spectrum having a wide bandwidth using a broadband light absorber. The infrared detector including a substrate, a light absorber disposed apart from the substrate at a distance, and a pair of thermal legs configured to support the light absorber such that the light absorber is spaced apart from the substrate by the distance. The light absorber includes at least one thermistor layer having a resistance value that varies according to temperature and at least two resonator layers disposed on at least one of upper and lower surfaces of the at least one thermistor layer.