Abstract: The present invention relates to a method for operating a first communication node in a wireless local area network (WLAN) supporting a multi-link operation, comprising the steps of: setting a first transmit window size of a first link for transmitting a plurality of frames to a second communication node; transmitting the plurality of frames through the first link; when the state of a channel detected through channel sensing in the second link is an idle state, setting a transmit opportunity (TXOP) in the channel; and when the transmit opportunity is set, performing an agreement with the second communication node on the size of a second transmit window for transmitting the plurality of frames. Therefore, it is possible to improve the performance of a communication system.

Abstract: Provided are an optical display device protecting film and an optical display device comprising the same, the optical display device protecting film comprising: a first substrate layer; and a hard coating layer formed on the first substrate layer, wherein the substrate layer is made of a thermoplastic polyurethane film, and the first substrate layer has a thickness of 100 ?m to 200 ?m and has a Shore hardness of 95 A to 98 A.

Abstract: An information management apparatus may include a storage device that separately stores ontology information of an intelligent robot that provides a service and includes a plurality of repositories each having meta information. A storage management device sorts and stores ontology information of the intelligent robot in the plurality of repositories based on a prefix of the ontology information of the intelligent robot and the meta information.

Abstract: An apparatus includes a potential failure information generation circuit configured to generate potential failure inforrnation by detecting, based on first failure information on a first faded signal line and second failure information on a second faded signal line, whether the first failed signal line and the second faded signal line are adjacent to each other; and a flag generation circuit configured to generate a flag by comparing the potential failure information with redundancy repair information.

Abstract: A system and method for detecting a hands-off state of a steering wheel may include acquiring, by a controller, a steering torque, a steering angle and a steering angular speed while driving of a vehicle, determining, by the controller, a variance value of the steering angular speed through cumulation for a designated time, determining, by the controller, a difference value between a steering angular speed estimated through a steering system model determined on an assumption that the steering wheel is in the hands-off state and a measured steering angular speed through cumulation for a designated time, when the variance value of the steering angular speed is less than a first threshold value, and divisionally determining, by the controller, whether or not the steering wheel is in the hands-off state or in the hands-on state according to the difference value between the measured and estimated steering angular speeds.

Abstract: A memory device includes an at least one first normal mat and an at least one second normal mat, a first redundancy mat configured to provide one or more first redundancy column lines for repairing one or more column lines disposed in the at least one first normal mat, a second redundancy mat configured to provide one or more second redundancy column lines for repairing one or more column lines disposed in the at least one second normal mat, and a redundancy segmented input/output (I/O) line coupled to both of the first redundancy mat and the second redundancy mat.

Abstract: A manufacturing apparatus of a precursor for positive electrode active material includes a reactor configured to receive a reaction solution and produce a precursor for positive electrode active material through a co-precipitation reaction of the reaction solution, a filtration unit disposed inside the reactor and configured to discharge a filtrate excluding solids in the reaction solution to the outside of the reactor when the reaction solution reaches a predetermined solution level, an extraction unit configured to extract a portion of the reaction solution when the size of a precursor particle in the reaction solution reaches a predetermined size, and a storage tank configured to receive a reaction solution extracted from the reactor through the extraction unit. A method of manufacturing and the precursor are also provided.

Abstract: Apparatuses, systems, and techniques to perform effective tone management for image data. In an embodiment, a set of contrast gain curves are generated corresponding to a set of tonal ranges of an input image. An output image may then be generated by at least applying corresponding contrast gain curves to tonal ranges of the input image.

Abstract: The present invention relates to an operating method of a first communication node in a communication system, comprising the steps of: negotiating with a second communication node with respect to a parameter for multi-link transmission; determining, on the basis of the parameter, a plurality of links for performing the multi-link transmission, and the transmission method by which the multi-link transmission is performed; and transmitting, in the plurality of links, a data frame to the second communication node by means of the transmission method. Therefore, the communication node can efficiently set and change links.

Abstract: A method of peeling off the protective film includes: providing a panel lower sheet, where a protective film is provided on one surface of the plane lower sheet and the protective film has a bending line extending in a first direction parallel to opposing sides thereof; gripping a portion of the protective film; moving the gripped portion of the protective film in a second direction which is a thickness direction thereof; and moving the panel lower sheet in a third direction perpendicular to the bending line.

Abstract: An optical display includes an optical display element including a second substrate, a first substrate facing the second substrate, a dummy region and a metal interconnection layer thereon. A first polarizing plate on an upper surface of the optical display element has a light shielding layer therein including printed patterns separated from each other. A first printed layer includes a first point at an interface between the display and non-display regions and a second point at a vertex closest to the first point. A second printed layer includes a third point at the interface and a fourth point at a vertex closes to the third point. The light shielding layer satisfies H?P/2, where H is a minimum value among a distance from the interface to the second point and a distance from the interface to the fourth point, and P is a width of the dummy region.

Abstract: A memory device having an improved operation speed includes: a memory cell; a page buffer circuit connected to the memory cell through a bit line; and a program operation controller for controlling an operation of the page buffer circuit. The page buffer circuit includes: a bit line voltage supply for providing a precharge voltage to the bit line; a sensing node voltage supply for providing a sensing node precharge voltage to a sensing node connected to the bit line; a first latch for storing first verify data; a sensing node connector for releasing connection between the bit line and the sensing node, after the first verify data is stored; and a second latch for storing second verify data determined according to the voltage of the sensing node, after the connection between the bit line and the sensing node is released.

Abstract: The present invention provides a tin oxide forming composition and a tin oxide forming method using the tin oxide forming composition. The tin oxide forming composition of the present invention is easy to manufacture and is capable of forming a tin oxide with a high yield.

Abstract: The present technology relates to an electronic device. According to the present technology, a method of operating a memory device including a program operation speed in which an effect of a disturbance is reduced, and including a plurality of memory blocks each including a plurality of memory cell strings each including a plurality of memory cells connected in series between a bit line and a source line, a plurality of source select transistors connected in series between the source line and the plurality of memory cells, and a plurality of drain select transistors connected in series between the bit line and the plurality of memory cells, includes applying a precharge voltage to the source line, and applying the precharge voltage to a first source select line connected to a source select transistor adjacent to the source line among source select transistors included in an unselected memory block among the plurality of memory blocks.

Abstract: A memory device having an improved operation speed may include a memory block including memory cells, a peripheral circuit configured to perform a program operation of increasing each of threshold voltages of the memory cells, and a control logic configured to control the peripheral circuit to perform the program operation. The program operation may include a plurality of program loops, each of the plurality of program loops may include a program voltage apply operation and a verify operation, and the control logic may control the peripheral circuit to perform verification on a highest program state during a verify operation included in a next program loop of any one program loop, when verification of a next higher program state among the plurality of program states is passed during a verify operation included in the any one program loop among the plurality of program loops.

Abstract: A semiconductor memory device includes a memory cell array, a page buffer, a control logic, and a voltage generator. The memory cell array includes memory cells. The page buffer is connected to the memory cells through a bit line and configure to read data of the memory cells. The control logic generates control signals for controlling the page buffer. The voltage generator generates activation voltages of the control signals. The page buffer includes a first transistor between the bit line and a first node, a second transistor between a power voltage and a second node, a third transistor between the first node and the second node, a fourth transistor between the second node and a third node, and a fifth transistor between the first node and the third node. The voltage generator controls a first control signal controlling the fifth transistor based on temperature of the semiconductor memory device.

Abstract: A memory module includes: a plurality of memories, wherein each of the memories comprises: an encryption key storage circuit suitable for storing an encryption key; an address encryption circuit suitable for generating an encrypted address by encrypting an address transferred from a memory controller by using the encryption key stored in the encryption key storage circuit; and a cell array accessed by the encrypted address, wherein the encryption key storage circuits of the memories store different encryption keys.

Abstract: Provided herein may be a memory device having improved overshoot management performance, and a method of operating the memory device. The method may include: applying a select voltage to a select line coupled in common to respective select transistors in a plurality of cell strings; and applying a program voltage to a selected word line coupled in common to selected memory cells among a plurality of memory cells in the plurality of cell strings. The applying of the select voltage may include applying a first select voltage to the select line during a first time period. The applying of the program voltage may include applying, to the select line, a second select voltage having a voltage level higher than a voltage level of the first select voltage.

Abstract: Provided is an electrode for electrolysis and a preparation method of the same. The electrode for electrolysis has an improved needle-like structure of a rare earth metal compared to conventional electrodes, and thus detachment of catalytic materials is reduced, so that the electrode is excellent in durability such as exhibiting stable performance even in a reverse current flow. Further, since the electrode for electrolysis has a low overvoltage value, an overvoltage required amount of the electrolytic cell can be remarkably reduced. In addition, an electrode for electrolysis having the above effect can be prepared without introducing additional precursors or changing manufacturing facilities.

Abstract: There is provided a semiconductor device capable of improving the performance and/or reliability of the element, by increasing the capacitance of the capacitor, using a capacitor dielectric film including a ferroelectric material and a paraelectric material. The semiconductor device includes first and second electrodes disposed to be spaced apart from each other, and a capacitor dielectric film disposed between the first electrode and the second electrode and including a first dielectric film and a second dielectric film. The first dielectric film includes one of a first monometal oxide film and a first bimetal oxide film, the first dielectric film has an orthorhombic crystal system, the second dielectric film includes a paraelectric material, and a dielectric constant of the capacitor dielectric film is greater than a dielectric constant of the second dielectric film.