Abstract: Provided is a ceiling storage system capable of correcting a working position and constantly checking stability of a structure by detecting an amount of change in a facility. According to the ceiling storage system, a transport vehicle moves to an upper portion of a first storage area of a plurality of storage areas in a state of gripping an article, and the transport vehicle measures a first distance value between the transport vehicle and the first storage area using a distance sensor and measures a relative position value between the transport vehicle and the first storage area using a vision sensor, before unloading the article from the first storage area.

Abstract: A liquid crystal device including an array substrate facing an opposite substrate; and a liquid crystal layer between the array and opposite substrate, the array substrate including a gate electrode and gate line on a base substrate; a gate insulating layer covering the gate electrode and including a trench crossing the gate line; a semiconductor layer on the gate insulating layer and including a channel area overlapping the gate electrode, a source area at one side of the channel area, and a drain area at another side of the channel area; a pixel electrode on the gate insulating layer and spaced apart from the semiconductor layer; a source electrode connected to the source area; a drain electrode connected to the drain area and the pixel electrode; a data line connected to the source electrode and being inside the trench; and a common electrode insulated from the pixel electrode.

Abstract: A liquid crystal device including an array substrate facing an opposite substrate; and a liquid crystal layer between the array and opposite substrate, the array substrate including a gate electrode and gate line on a base substrate; a gate insulating layer covering the gate electrode and including a trench crossing the gate line; a semiconductor layer on the gate insulating layer and including a channel area overlapping the gate electrode, a source area at one side of the channel area, and a drain area at another side of the channel area; a pixel electrode on the gate insulating layer and spaced apart from the semiconductor layer; a source electrode connected to the source area; a drain electrode connected to the drain area and the pixel electrode; a data line connected to the source electrode and being inside the trench; and a common electrode insulated from the pixel electrode.

Abstract: A thin film transistor (TFT) array panel includes a substrate, a first signal line disposed on the substrate, a first insulating layer disposed on the first signal line, a second signal line disposed on the first insulating layer, a second insulating layer disposed on the second signal line, the second insulating layer comprising an organic layer, a connection bridge disposed on the second insulating layer, the connection bridge connecting the first signal line with the second signal line, an overcoat disposed on the connection bridge, a first contact hole formed in the first and second insulating layers, the first contact hole exposing a portion of the first signal line, and a second contact hole formed in the second insulating layer, the second contact hole exposing a portion of the second signal line, wherein the connection bridge connects the first and second signal lines through the first and second contact holes.

Abstract: An array substrate includes a substrate, an electrode pad, an insulating layer and a transparent electrode. The substrate includes a display region and a peripheral region adjacent to the display region. The electrode pad is in the peripheral region. The electrode pad includes a first metal layer and a second metal layer. The second metal layer is on the first metal layer, and includes an opening through which the first metal layer is partially exposed. The insulating layer is on the electrode pad and covers a side surface of the second metal layer in the opening and a portion of the exposed the first metal layer. The transparent electrode is on the insulating layer, and is electrically connected to the first metal layer through a via hole in the insulating layer.