Patents by Inventor Hyun Jee OH

Hyun Jee OH has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10734547
    Abstract: An embodiment relates to a semiconductor device, a semiconductor device package, and a method for producing a semiconductor device, the semiconductor device comprising a light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, and an intermediate layer disposed between the first conductivity type semiconductor layer and the active layer, or disposed inside the first conductivity type semiconductor layer, wherein the first conductivity type semiconductor layer, the intermediate layer, the active layer, and the second conductivity type semiconductor layer include aluminum, and the intermediate layer includes a first intermediate layer having a lower aluminum composition than that of the first conductivity type semiconductor layer.
    Type: Grant
    Filed: June 23, 2017
    Date of Patent: August 4, 2020
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Rak Jun Choi, Byeoung Jo Kim, Hyun Jee Oh, Jung Yeop Hong
  • Publication number: 20190326473
    Abstract: An embodiment relates to a semiconductor device, a semiconductor device package, and a method for producing a semiconductor device, the semiconductor device comprising a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and an intermediate layer disposed between the first conductive semiconductor layer and the active layer, or disposed inside the first conductive semiconductor layer, wherein the first conductive semiconductor layer, the intermediate layer, the active layer, and the second conductive semiconductor layer include aluminum, and the intermediate layer includes a first intermediate layer having a lower aluminum composition than that of the first conductive semiconductor layer.
    Type: Application
    Filed: June 23, 2017
    Publication date: October 24, 2019
    Inventors: Rak Jun CHOI, Byeoung Jo KIM, Hyun Jee OH, Jung Yeop HONG
  • Publication number: 20190280154
    Abstract: A semiconductor device includes a semiconductor structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer provided between the first conductive semiconductor layer and the second conductive semiconductor layer, and a semiconductor device package including the semiconductor device. The active layer includes a plurality of barrier layers and a plurality of well layers. The second conductive semiconductor layer includes a conductive second semiconductor layer and a conductive first semiconductor layer provided on the conductive second semiconductor layer. The conductive second semiconductor layer has a higher aluminum composition than the well layers, and the conductive first semiconductor layer has a lower aluminum composition than the well layers.
    Type: Application
    Filed: May 17, 2019
    Publication date: September 12, 2019
    Inventors: Hyun Jee OH, Rak Jun Choi, Byeoung Jo Kim
  • Publication number: 20190267514
    Abstract: An embodiment discloses a semiconductor device including a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first electrode electrically connected with the first conductive semiconductor layer; and a second electrode electrically connected with the second conductive semiconductor layer, and a semiconductor device package including the same. The second conductive semiconductor layer includes a first surface on which the second electrode is disposed. The second conductive semiconductor layer has a ratio of a second shortest distance W2, which is a distance from the first surface to a second point, to a first shortest distance W1, which is a distance from the first surface to a first point, (W2:W1) ranging from 1:1.25 to 1:100.
    Type: Application
    Filed: September 13, 2017
    Publication date: August 29, 2019
    Applicant: LG INNOTEK CO., LTD.
    Inventors: Rak Jun CHOI, Byeoung Jo KIM, Hyun Jee OH, Sung Ho JUNG
  • Patent number: 10340415
    Abstract: A semiconductor device includes a semiconductor structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer provided between the first conductive semiconductor layer and the second conductive semiconductor layer, and a semiconductor device package including the semiconductor device. The active layer includes a plurality of barrier layers and a plurality of well layers. The second conductive semiconductor layer includes a conductive second semiconductor layer and a conductive first semiconductor layer provided on the conductive second semiconductor layer. The conductive second semiconductor layer has a higher aluminum composition than the well layers, and the conductive first semiconductor layer has a lower aluminum composition than the well layers.
    Type: Grant
    Filed: August 31, 2017
    Date of Patent: July 2, 2019
    Assignee: LG Innotek Co., Ltd.
    Inventors: Hyun Jee Oh, Rak Jun Choi, Byeoung Jo Kim
  • Publication number: 20180145219
    Abstract: A light emitting structure that includes: first and second semiconductor layers having aluminum; and an active layer having aluminum between the first and the second semiconductor layers, the intensity exhibited in the second semiconductor layer range between a first minimum intensity of the secondary ions and a first maximum intensity of the secondary ions, and the intensity exhibited in the first semiconductor layer include a second minimum intensity of the secondary ions, the second minimum intensity being different from the first minimum intensity, and at a first prescribed distance from a surface of the second semiconductor layer, the second semiconductor layer exhibits a first intermediate intensity of the secondary ions corresponding to the second minimum intensity, which is between the first minimum intensity and the first maximum intensity, wherein the first maximum intensity occurs at a second prescribed distance from the first prescribed distance, wherein a ratio of the second prescribed distance (
    Type: Application
    Filed: November 22, 2017
    Publication date: May 24, 2018
    Inventors: Byeong Jo Kim, Rak Jun Choi, Hyun Jee Oh
  • Publication number: 20180069150
    Abstract: A semiconductor device includes a semiconductor structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer provided between the first conductive semiconductor layer and the second conductive semiconductor layer, and a semiconductor device package including the semiconductor device. The active layer includes a plurality of barrier layers and a plurality of well layers. The second conductive semiconductor layer includes a conductive second semiconductor layer and a conductive first semiconductor layer provided on the conductive second semiconductor layer. The conductive second semiconductor layer has a higher aluminum composition than the well layers, and the conductive first semiconductor layer has a lower aluminum composition than the well layers.
    Type: Application
    Filed: August 31, 2017
    Publication date: March 8, 2018
    Inventors: Hyun Jee OH, Rak Jun CHOI, Byeoung Jo KIM