Patents by Inventor Hyun Ji YANG

Hyun Ji YANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • MULTILAYER ELECTRONIC COMPONENT
    Publication number: 20240153710
    Abstract: A multilayer electronic component includes: a body including a dielectric layer and an internal electrode; and external electrodes disposed on the body. An average content of indium (In) relative to titanium (Ti) satisfies 0.3 at % or more and 3.8 at % or less in a region of the dielectric layer that is spaced apart by 2 nm from an interface thereof with the internal electrode.
    Type: Application
    Filed: August 25, 2023
    Publication date: May 9, 2024
    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Jun Oh KIM, Byung Kun KIM, Yu Hong OH, Hyun Ji YANG
  • Thin film transistor and vertical non-volatile memory device including metal oxide channel layer having bixbyite crystal
    Patent number: 11588057
    Abstract: A thin film transistor and a non-volatile memory device are provided. The thin film transistor comprises a gate electrode, and a metal oxide channel layer traversing the upper or lower portions of the gate electrode. The metal oxide channel layer has semiconductor properties while having bixbyite crystals. An insulating layer is disposed between the gate electrode and the metal oxide channel layer. Source and drain electrodes are electrically connected to both ends of the metal oxide channel layer, respectively.
    Type: Grant
    Filed: April 22, 2020
    Date of Patent: February 21, 2023
    Assignee: Industry-University Cooperation Foundation Hanyang University
    Inventors: Jae Kyeong Jeong, Hyun Ji Yang, Hyeon Joo Seul
  • THIN FILM TRANSISTOR AND VERTICAL NON-VOLATILE MEMORY DEVICE INCLUDING METAL OXIDE CHANNEL LAYER HAVING BIXBYITE CRYSTAL
    Publication number: 20210408290
    Abstract: A thin film transistor and a non-volatile memory device are provided. The thin film transistor comprises a gate electrode, and a metal oxide channel layer traversing the upper or lower portions of the gate electrode. The metal oxide channel layer has semiconductor properties while having bixbyite crystals. An insulating layer is disposed between the gate electrode and the metal oxide channel layer. Source and drain electrodes are electrically connected to both ends of the metal oxide channel layer, respectively.
    Type: Application
    Filed: April 22, 2020
    Publication date: December 30, 2021
    Applicant: Industry- University Cooperation Foundation Hanyang University
    Inventors: Jae Kyeong JEONG, Hyun Ji YANG, Hyeon Joo SEUL