Abstract: A method of a terminal may comprise: receiving, from a CU of a base station, configuration information of one or more candidate cells and configuration information for measurement; performing L1 measurement on the candidate cells based on the configuration information for measurement; acquiring uplink synchronization for the candidate cells by performing an uplink synchronization management procedure for the candidate cells based on the configuration information of the candidate cells; reporting a result of the L1 measurement to a DU of the base station; receiving, from the DU of the base station, information on a target cell, being the target cell to switch among the candidate cells, based on the result of the L1 measurement; and applying the uplink synchronization acquired through the uplink synchronization management procedure to the target cell.

Abstract: An overlay mark forming a Moire pattern, an overlay measurement method using the overlay mark, an overlay measurement apparatus using the overlay mark, and a manufacturing method of a semiconductor device using the overlay mark are provided. The overlay mark for measuring an overlay based on an image is configured to determine a relative misalignment between at least two pattern layers. The overlay mark includes a first overlay mark including a pair of first grating patterns which has a first pitch along a first direction and which is rotationally symmetrical by 180 degrees, and includes a second overlay mark including a pair of second grating patterns and a pair of third grating patterns. The second grating patterns partially overlap the first grating patterns and are rotationally symmetrical by 180 degrees, and the third grating patterns partially overlap the first grating patterns and are rotationally symmetrical by 180 degrees.

Abstract: A method of a terminal may comprise: receiving a first message including state information of a base station from the base station; identifying preliminary inactive state information included in the first message when the state information of the base station indicates a preliminary inactive state; and performing a cell selection based on the preliminary inactive state information.

Abstract: A transmitter and a receiver are provided. The transmitter includes a processing unit configured to receive a clock signal and a data signal, set a value of a consecutive identical digit (CID) value related to the data signal and generate a modulation signal during a unit interval (UI) based on the data signal and the CID value, and a transmitter driver configured to output output signals having different voltage levels during the unit interval by receiving the modulation signal.

Abstract: An overlay mark, an overlay measurement method using the same, and a manufacturing method of a semiconductor device using the same are provided. The overlay mark is for measuring an overlay based on an image, is configured to determine a relative misalignment between at least two pattern layers, and includes first to fourth overlay marks. The first overlay mark has a pair of first Moire patterns disposed on a center portion of the overlay mark. The second overlay mark has a pair of second Moire patterns disposed so as to face each other with the first Moire patterns interposed therebetween. The third overlay mark has a pair of third Moire patterns disposed on a first diagonal line with the first Moire patterns interposed therebetween. The fourth overlay mark has a pair of fourth Moire patterns disposed on a second diagonal line with the first Moire patterns interposed therebetween.

Abstract: Provided are an overlay mark, and an overlay measurement method and a semiconductor device manufacturing method using the overlay mark. Specifically, provided is an overlay mark for determining relative misalignment between two or more pattern layers or between two or more patterns separately formed in one pattern layer, the overlay mark including a first overlay mark positioned in the center, a second overlay mark positioned above and below the first overlay mark or on the left and right thereof, and a third overlay mark and a fourth overlay mark each positioned in a diagonal line with the first overlay mark in between.

Abstract: Provided are an overlay mark, and an overlay measurement method and a semiconductor device manufacturing method using the overlay mark. Specifically, provided is an overlay mark for determining relative misalignment between two or more pattern layers or between two or more patterns separately formed in one pattern layer, the overlay mark including a first overlay mark positioned in the center, a second overlay mark positioned above and below the first overlay mark or on the left and right thereof, and a third overlay mark and a fourth overlay mark each positioned in a diagonal line with the first overlay mark in between.

Abstract: A semiconductor device includes at least one trench extending into a semiconductor substrate and lined with a gate dielectric layer; a dipole inducing layer covering a lowermost portion of the lined trench; a gate electrode covering the dipole inducing layer and filled in the lined trench; and doping regions, in the semiconductor substrate, separated from each other by the lined trench and separated from the dipole inducing layer.