Abstract: A method of forming a molded interconnect device (MID) is provided. The method includes the steps of performing a molding stage, performing a circuit forming stage, and performing a plate stage. As a part of the molding stage, a palladium-catalyzed material is injection molded into a palladium-catalyzed substrate of a desired shape. As a part of the circuit forming stage, both a metallization step and a circuit patterning step are performed. As a part of the plating stage, both an electrolytic plating step and a circuit isolation step are performed.

Abstract: In some embodiments, a manufacturing process includes injection molding a palladium-catalyzed material into a substrate, forming a thin copper film over exterior and exposed surfaces of the substrate; ablating or removing copper film from the substrate to provide first, second and optional third portions of the copper film and ablated sections; electrolytically plating each portion to form metallic-plated portions; and ablating or removing the second portion in order to isolate the first portion. The metallic-plated first portion comprises a circuit portion of a molded interconnect device (MID), and where the metallic-plated third portion comprises a Faraday cage portion of a MID. A soft etching step may be included. A solder resist application step can be added, along with an associated solder resist removal step.

Abstract: In some embodiments, a manufacturing process includes injection molding a palladium-catalyzed material into a substrate, forming a thin copper film over exterior and exposed surfaces of the substrate; ablating or removing copper film from the substrate to provide first, second and optional third portions of the copper film and ablated sections; electrolytically plating each portion to form metallic-plated portions; and ablating or removing the second portion in order to isolate the first portion. The metallic-plated first portion comprises a circuit portion of a molded interconnect device (MID), and where the metallic-plated third portion comprises a Faraday cage portion of a MID. A soft etching step may be included. A solder resist application step can be added, along with an associated solder resist removal step.