Abstract: A multilayer electronic component may include: a multilayer body including a plurality of insulating layers; an internal coil part provided by electrically connecting respective conductive patterns disposed on the plurality of insulating layers to each other; and first and second external electrodes disposed on both end surfaces of the multilayer body, respectively. A perimeter of at least one conductive pattern disposed in peripheral regions of the multilayer body may be smaller than a perimeter of a conductive pattern disposed in a central region of the multilayer body.

Abstract: The present invention relates to a negative electrode active material for a secondary battery, a conductive composition for a secondary battery, a negative electrode material including the same, a negative electrode structure and secondary battery including the same, and a method for manufacturing the same. The present invention includes: a silicon particle; and an amorphous surface layer formed on the surface of the silicon particle. According to the present invention, the negative electrode structure is formed of a composite of a silicon particle and carbon or lithium ion, the oxygen contents of the solid electrolyte and silicon particles are low, and thus aggregation of silicon particles is inhibited. Therefore, in the event of using the negative electrode structure in a negative electrode, a power storage device such as a lithium secondary battery may have high energy density, high output density, and a longer charging/discharging life cycle.

Abstract: There are provided a film-type negative electrode filled with an active material and a method of manufacturing the same. The negative electrode according to the present invention includes a porous base film and a negative active material nanoparticle filled in pores of the porous base film According to the present invention, an excessive change in volume of a negative active material can be minimized during charging and discharging so as to improve a lifespan characteristic.

Abstract: A microfluidic device and a control method, the microfluidic device including a platform including a chamber configured to accommodate a sample, a channel connected to the chamber, and a metering unit connected to the chamber by the channel and configured to meter an amount of the sample, wherein the metering unit includes a metering chamber configured to measure the amount of the sample, and an accommodation chamber connected to the metering chamber and configured to accommodate the sample to prevent the sample from overflowing out of the metering chamber.

Abstract: The present invention relates to htSNPs for determining a genotype of cytochrome P450 1A2 (CYP1A2), 2A6 (CYP2A6) and 2D6 (CYP2D6), PXR and UDP-glucuronosyltransferase 1a (UGT1A) genes and a gene chip using the same, and more particularly, to a selection method of htSNPs for determining a haplotype of human CYP1A2, CYP2A6, CYP2D6, PXR and UGT1A genes, a method of determining a genotype of the genes by using the htSNPs and a gene chip therefor.

Abstract: The present invention relates to htSNPs for determining a genotype of cytochrome P450 1A2 (CYP1A2), 2A6 (CYP2A6) and 2D6 (CYP2D6), PXR and UDP-glucuronosyltransferase 1a (UGT1A) genes and a gene chip using the same, and more particularly, to a selection method of htSNPs for determining a haplotype of human CYP1A2, CYP2A6, CYP2D6, PXR and UGT1A genes, a method of determining a genotype of the genes by using the htSNPs and a gene chip therefor.

Abstract: The present invention relates to htSNPs for determining a genotype of cytochrome P450 1A2 (CYP1A2), 2A6 (CYP2A6) and 2D6 (CYP2D6), PXR and UDP-glucuronosyltransferase Ia (UGT1A) genes and a gene chip using the same, and more particularly, to a selection method of htSNPs for determining a haplotype of human CYP1A2, CYP2A6, CYP2D6, PXR and UGT1A genes, a method of determining a genotype of the genes by using the htSNPs and a gene chip therefor.