Abstract: The present disclosure relates to an organic electroluminescent device. The organic electroluminescent device of the present disclosure shows high luminous efficiency and good lifespan by comprising a specific combination of the plural kinds of host compounds and a specific hole transport compound.

Abstract: A motor-driving apparatus for driving a motor having a plurality of windings respectively corresponding to a plurality of phases is provided. The motor-driving apparatus includes a first inverter having a plurality of first switching devices and connected to first ends of the plurality of windings and a second inverter having a plurality of second switching devices and connected to second ends of the plurality of windings. A third switching device is configured to selectively connect and disconnect points at which a number of turns of each of the windings is divided in a preset ratio. A controller is configured to adjust an on/off state of the first to third switching devices based on required output of the motor.

Abstract: A semiconductor memory device includes a substrate including a cell region, a core region, and a boundary region between the cell region and the core region, a boundary element isolation layer in the boundary region, the boundary element isolation layer being in a boundary element isolation recess and including first and second boundary liner layers extending along a profile of the boundary element isolation recess and a first gate structure on the core region and at least a part of the boundary element isolation layer, wherein the first gate structure includes a first high dielectric layer, and a first gate insulating pattern below the first high dielectric layer, with a top surface of the substrate being a base reference level, the first gate insulating pattern does not overlap a top surface of the first boundary liner layer, and wherein the first gate insulating pattern includes a first_1 gate insulating pattern between a top surface of the second boundary liner layer and a bottom surface of the first high

Abstract: A method for producing a copper composite structure is disclosed. The method for producing a copper composite structure includes a first step of forming a copper pillar structure; and a second step of annealing the copper pillar structure under a nitrogen atmosphere.

Abstract: A computing method and device with data sharing are provided. The method includes loading, by a loader, input data of an input feature map stored in a memory in loading units according to a loading order, storing, by a buffer controller, the loaded input data in a reuse buffer of an address rotationally allocated according to the loading order, and transmitting, by each of a plurality of senders, to an executer respective input data corresponding to each output data of respective convolution operations among the input data stored in the reuse buffer, wherein portions of the transmitted respective input data overlap other.

Abstract: Disclosed is a 5G NR antenna device. An antenna module includes an antenna material formed of a metal material and having a semi-planar inverted-F antenna (PIFA) structure, and a support formed in the shape of a hexahedron with side and bottom faces that are bent from the antenna material by stamping, wherein the support and the antenna material are formed as an integral body.

Abstract: A positive electrode active material for a secondary battery includes a lithium composite transition metal oxide including nickel (Ni), cobalt (Co), and manganese (Mn), wherein the lithium composite transition metal oxide has a layered crystal structure of space group R3m, includes the nickel (Ni) in an amount of 60 mol % or less based on a total amount of transition metals, includes the cobalt (Co) in an amount greater than an amount of the manganese (Mn), and is composed of single particles.

Abstract: In this specification, a image decoding method is disclosed. The image decoding method of the present invention comprises, decoding block partition information of a current block included in a current picture, determining a partitioning scheme for the current block according to the block partition information and partitioning the current block using the partitioning scheme determined, wherein the partitioning scheme is determined according to whether the current block includes a boundary of the current picture.

Abstract: A semiconductor device includes a line; a source structure on the line; a stack structure on the source structure; a first slit structure penetrating the stack structure; a second slit structure penetrating the stack structure; and a contact plug adjacent to the first slit structure in a first direction. The first slit structure and the second slit structure may be spaced apart from each other by a first distance in a second direction that is perpendicular to the first direction. The contact plug penetrates the source structure, the contact plug being electrically connected to the lower line. The first slit structure and the contact plug may be spaced apart from each other by a second distance in the first direction, and the second distance may be longer than the first distance.

Abstract: A light-emitting element includes a first end portion and a second end portion disposed in a length direction of the light-emitting element, a first electrode corresponding to the first end portion, a first semiconductor layer on the first electrode, an active layer on the first semiconductor layer, a second semiconductor layer on the active layer, and a second electrode on the second semiconductor layer and corresponding to the second end portion. The second electrode includes a first layer on the first semiconductor layer, and a second layer on the first layer. The first semiconductor layer includes a p-type semiconductor layer doped with a p-type dopant. The second semiconductor layer includes an n-type semiconductor layer doped with an n-type dopant. The first electrode is in ohmic contact with the first semiconductor layer. The second electrode is in ohmic contact with the second semiconductor layer.

Abstract: A microdevice for detecting aldehydes or ketones by utilizing a rotary platform, the microdevice comprising a disc-shaped rotary platform and a microfluidic structure disposed on the rotary platform, and the microfluidic structure comprising a sample storage part, an eluent storage part, a separation part, a first microfluid flow channel, a second microfluid flow channel, and an absorption pad.

Abstract: Provided is a thermoelectric module. The thermoelectric module includes a thermoelectric element including a first substrate, a first electrode disposed on the first substrate, a semiconductor structure disposed on the first electrode, a second electrode disposed on the semiconductor structure, and a second substrate disposed on the second electrode, a heat sink disposed on the second substrate, and an adhesive layer configured to bond the second substrate to the heat sink. The heat sink has a shape in which predetermined patterns are regularly repeated and connected. Each pattern includes a first surface disposed opposite to the second substrate, a in second surface which extends upward from one end of the first surface, a third surface which extends from the second surface to face the second substrate, and a fourth surface which extends upward from the other end opposite to the one end of the first surface and is connected to a third surface of an adjacent pattern.

Abstract: A railess variable seatback type rear seat includes: a linear movement device configured to convert a rotation of a motor into a linear movement; a sliding movement device configured to convert the linear movement into a sliding movement in which a seat cushion is pushed forward or backward; and a reclining angle change device configured to convert the sliding movement into a reclining movement, and to fold a seatback, which is connected to the seat cushion, forward or to recline the seatback backward.

Abstract: A semiconductor wafer cleaning composition for used in a semiconductor device manufacturing process and a method of cleaning a semiconductor wafer using the cleaning composition are provided. The cleaning composition includes surfactants represented by Formula 1 and Formula 2, respectively, an organic or inorganic acid, and water occupying for the remaining proportion. The cleaning method is a method of immersing a semiconductor wafer in the cleaning composition for 100 to 500 seconds. The cleaning composition and the cleaning method according to the present disclosure provide an incredibility improved removal rate and an effective cleaning power for contaminants, especially organic wax, during a process of polishing the surface of a wafer used to manufacture semiconductor devices, thereby providing a super-cleaned wafer surface, resulting in production of reliable semiconductor devices.

Abstract: Proposed is a precursor composition for forming a metal film including a zirconium compound represented by any one of Chemical Formulas 1 to 3 and a hafnium compound represented by any one of Chemical Formulas 4 to 6.

Abstract: A degassing apparatus for a secondary battery, and a degassing method using same, is provided. The degassing apparatus includes a drive motor and a jig arm configured to pressurize a first surface of a gas pocket of a battery cell and a second surface opposite the first surface by controlling a separation distance by the operation of a driving motor. The degassing apparatus is capable of performing an effective degassing and sealing process for the battery cell without positional movement of the battery cell during cell activation or after cell activation.

Abstract: Disclosed is a display device and a method of manufacturing the same having improved reliability. In the display device, at least one of a plurality of dielectric films disposed between an oxide semiconductor layer and a light-emitting device includes a lower region disposed on the oxide semiconductor layer and an upper region disposed on the lower region, the upper region including a trap element configured to trap hydrogen, whereby reliability of a thin film transistor including the oxide semiconductor layer is improved.

Abstract: A non-fungible token (NFT) information providing system includes: a first server configured to generate a virtual image, a second server configured to store NFT information, and a display device configured to communicate with the first server and the second server. The display device includes a sensing unit configured to sense an NFT object, a comparison unit including an image comparison processor and configured to determine the NFT information corresponding to the NFT object, from the second server using image comparison algorithm implemented by the image comparison processor, and a display unit configured to display the virtual image and the NFT information.

Abstract: Disclosed is a mechanochromic array patch that implements, as a color change, a strain applied to a skin surface due to musculoskeletal movement. The mechanochromic array patch may include stretchable mechanochromic color-changing parts, a polymer connection part that connects the mechanochromic color-changing parts, and a water-insoluble support part. The polymer connection part may have a higher elastic modulus compared to the mechanochromic color-changing parts.

Abstract: An electronic device includes a display unit including an active area configured to display an image, a peripheral area adjacent to the active area, and an input sensing unit disposed on the display unit within the active area. The input sensing unit includes a first sensing electrode disposed in the active area and a second sensing electrode spaced apart from the first sensing electrode and disposed in the active area.