Patents by Inventor Hyun Kyo Choi

Hyun Kyo Choi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Silicon single crystal growing furnace supplemented with low melting point dopant feeding instrument and the low melting point dopant feeding method thereof
    Patent number: 6899760
    Abstract: A silicon single crystal growing apparatus supplemented with a low melting point dopant feeding instrument and a low melting point dopant feeding method thereof for producing a heavily doped silicon single crystal with a dopant of low melting point. The apparatus includes a quartz crucible containing molten silicon liquid, a heating unit supplying the quartz crucible with a radiant heat, a crystal pulling lifter pulling up a silicon single crystal from a molten silicon liquid contained in the quartz crucible, and a low melting point dopant feeding instrument. The low melting point dopant feeding instrument includes a sidewall portion, an upper portion, and an open bottom portion with net-like structure having many holes, the sidewall and upper portions being vacuum-tight sealed.
    Type: Grant
    Filed: December 13, 2002
    Date of Patent: May 31, 2005
    Assignee: Siltron, Inc.
    Inventors: Ill Soo Choi, Hyun Kyo Choi
  • Silicon single crystal growing furnace supplemented with low melting point dopant feeding instrument and a low melting point dopant feeding method thereof
    Publication number: 20040069214
    Abstract: A silicon single crystal growing apparatus supplemented with a low melting point dopant feeding instrument and a low melting point dopant feeding method thereof for producing a heavily doped silicon single crystal with a dopant of low melting point. The apparatus includes a quartz crucible containing molten silicon liquid, a heating unit supplying the quartz crucible with a radiant heat, a crystal pulling lifter pulling up a silicon single crystal from a molten silicon liquid contained in the quartz crucible, and a low melting point dopant feeding instrument. The low melting point dopant feeding instrument includes a sidewall portion, an upper portion, and an open bottom portion with net-like structure having many holes, the sidewall and upper portions being vacuum-tight sealed and a low melting point dopant being loaded inside the low melting point dopant feeding instrument.
    Type: Application
    Filed: December 13, 2002
    Publication date: April 15, 2004
    Inventors: Ill Soo Choi, Hyun Kyo Choi