Abstract: The present invention provides a component for a semiconductor device fabrication apparatus, a semiconductor device fabrication apparatus including the same, and a method of fabricating a semiconductor device, wherein the component includes single-crystal silicon, wherein, on at least one surface thereof, a water contact angle is 45° to 74° and a diiodomethane contact angle is 41° to 57°.

Abstract: A portable terminal and a method for managing items on a clipboard of the portable terminal are provided for a user to copy text and data items simultaneously onto the clipboard and paste the copied items individually where the user desires. The clipboard control method includes displaying a first screen of source data, copying at least a part of the source data in response to a user request, saving the copied source data as a clip data item, displaying a second screen in response to a user request, presenting a clipboard window on the second screen in response to a user request, and pasting the clip data item selected from the clip window onto the second screen in response to a user request.

Abstract: A portable terminal and a method for managing items on a clipboard of the portable terminal are provided for a user to copy text and data items simultaneously onto the clipboard and paste the copied items individually where the user desires. The portable terminal of the present invention includes a touchscreen and a control unit which controls presenting a display region showing a screen corresponding to user command on the touchscreen in response to an execution of at least one application, presenting a clipboard region at a part of the touchscreen in response to a user command, and displaying clip data selected by the user among at least one clip data appearing in the clipboard region on the display region.

Abstract: A method of fabricating a phase inverted mask comprising the steps of forming a shielding layer pattern on a substrate, injecting oxygen ions into a surface of the shielding layer pattern, and converting the shielding layer pattern having the oxygen ions injected therein into an oxidation layer to thereby form a phase inverted layer.