Abstract: The present invention relates to a method of determining a company related to news based on scoring and an apparatus for performing the method. A method of determining a company related to news based on scoring, comprises determining, by a news ticker mapping apparatus, a candidate ticker for a sentence and determining, by the news ticker mapping apparatus, a sentence ticker for the sentence on the basis of a candidate ticker score, which is a score for the candidate ticker.

Abstract: The present invention relates to a method of determining a news ticker related to news based on a sentence ticker and an apparatus for performing the method. The method of determining a news ticker related to news based on a sentence ticker, comprises determining, by a news ticker mapping apparatus, each of a plurality of sentences tickers for each of a plurality of sentences, determining, by the news ticker mapping apparatus, a weight for each of the plurality of sentences tickers and determining, by the news ticker mapping apparatus, the news ticker on the basis of the plurality of sentences tickers and the weight for each of the plurality of sentences tickers.

Abstract: The present invention relates to a method of determining a candidate company related to news and an apparatus for performing the method. The method of determining a candidate company related to news, comprises determining, by a news ticker mapping apparatus, an entity name for news and determining, by the news ticker mapping apparatus, a candidate ticker on the basis of the entity name.

Abstract: A device structure of a LDMOSFET has trench type sinker formed using a trench process. A semiconductor layer of a first conductive type is formed within the device structure. A field area is formed in a trench structure on one side of the semiconductor layer and a gate electrode is formed on a given surface of the semiconductor layer. A channel layer of a second conductive type is formed by laterally diffusion from the field area to a width containing both sides of the gate electrode. The source area of LDMOS is electrically connected with the substrate through the sinker. By a piercing through the source area, the sinker divides the source area into two source areas. This division reduces the parasitic resistance as well as parasitic capacitance. In addition, the device structure eliminates the need for high temperature diffusion process and reduces lateral diffusion of the sinker.