Abstract: An embodiment discloses a method for controlling a vehicle virtualization structure-based device including the steps of receiving a request for use of a device from at least one container among a plurality of containers; and determining the use of the device according to a type of the device and a type of the container that transmits the request for use.

Abstract: Example embodiments of a semiconductor package are provided. In accordance with an example embodiment, a semiconductor package may include an external terminal connected to a concave surface of a bottom pad, wherein the bottom pad is recessed into a substrate. In accordance with another example embodiment, a semiconductor package may include at least one external terminal, a flexible substrate having a first surface with a plurality of convex portions and a second surface opposite the first surface having a plurality of concave portions, wherein the at least one terminal is recessed into the substrate and at least one of the concave portions surrounds a portion of the at least one external terminal.

Abstract: The present invention relates to a thickness measurement method for thin films using microwaves. In the method, the Q-factors of a dielectric resonator are measured. The effective surface resistance (RSeff) of a superconductor or a conductor film and the loss tangent of a dielectric are determined using the Q-factor. The penetration depth ? for the superconductor film is measured using a dielectric resonator with a small gap between the superconductor film at the top of the resonator and the rest. The intrinsic surface resistance of superconductor films for calibration is determined using the measured RSeff and ? while the intrinsic surface resistance of a conductor film for calibration is determined using the measured RSeff and the nature of the intrinsic surface resistance being equal to the intrinsic surface reactance.

Abstract: The present invention relates to a thickness measurement method for thin films using microwaves. In the method, the Q-factors of a dielectric resonator are measured. The effective surface resistance (RSeff) of a superconductor or a conductor film and the loss tangent of a dielectric are determined using the Q-factor. The penetration depth ? for the superconductor film is measured using a dielectric resonator with a small gap between the superconductor film at the top of the resonator and the rest. The intrinsic surface resistance of superconductor films for calibration is determined using the measured RSeff and ? while the intrinsic surface resistance of a conductor film for calibration is determined using the measured RSeff and the nature of the intrinsic surface resistance being equal to the intrinsic surface reactance.