Patents by Inventor Hyun-Kyung Woo

Hyun-Kyung Woo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11154860
    Abstract: The present invention relates to a centrifugal force-based nanoparticle separation apparatus and method. Specifically, the present invention is based on having a low centrifugal force and a small size, and may thus separate nanovesicles unrelated to antibody specificity in a short time and without using an ultracentrifuge. Further, the present invention requires no additional professional personnel and enables accurate fluid measurement by integrating and automating all processes after sample injection, and may thus reduce the loss of nanovesicles.
    Type: Grant
    Filed: October 21, 2016
    Date of Patent: October 26, 2021
    Assignee: UNIST (ULSAN NATIONAL INSTITUTE OF SCIENCE & TECHNOLOGY)
    Inventors: Yoon-Kyoung Cho, Hyun-Kyung Woo, Ja-Ryoung Han, Tae-Hyeong Kim, Yoon-Keun Kim
  • Publication number: 20180297031
    Abstract: The present invention relates to a centrifugal force-based nanoparticle separation apparatus and method. Specifically, the present invention is based on having a low centrifugal force and a small size, and may thus separate nanovesicles unrelated to antibody specificity in a short time and without using an ultracentrifuge. Further, the present invention requires no additional professional personnel and enables accurate fluid measurement by integrating and automating all processes after sample injection, and may thus reduce the loss of nanovesicles.
    Type: Application
    Filed: October 21, 2016
    Publication date: October 18, 2018
    Inventors: Yoon-Kyoung CHO, Hyun-Kyung WOO, Ja-Ryoung HAN, Tae-Hyeong KIM, Yoon-Keun KIM
  • Publication number: 20060141702
    Abstract: Disclosed are a method for depositing a titanium oxide (TiO2) layer and a method for fabricating a capacitor by using the same. The method for forming the TiO2 layer includes the steps of: a) adsorbing titanium hydride (TiH2) on a wafer loaded into a chamber by supplying TiH2 to the chamber; b) purging out the non-adsorbed TiH2; c) forming an TiO2 layer on the wafer by inducing a reaction between the TiH2 and the oxygen source with supplying an oxygen source as a reaction gas to the chamber; and d) purging out the non-reacted oxygen source and a by-product. The method for fabricating the capacitor includes the steps of: forming a lower electrode on a wafer; depositing a titanium oxide (TiO2) layer on the lower electrode by using titanium hydride (TiH2) as a precursor; and forming an upper electrode on the TiO2 layer.
    Type: Application
    Filed: June 9, 2005
    Publication date: June 29, 2006
    Inventors: Hyun-Kyung Woo, Seung-Jin Yeom, Deok-Sin Kil, Kwon Hong