Abstract: The present invention provides a pharmaceutical composition for prevention or treatment of a stress disease and depression, the pharmaceutical composition be safely useable without toxicity and side effects by using an extract of leaves of Vaccinium bracteatum Thunb., which is natural resource of Korea, so that the reduction of manufacturing and production costs and the import substitution and export effects can be expected through the replacement of a raw material for preparation with a plant inhabiting in nature.

Abstract: A semiconductor device includes a substrate having a first region and a second region, first active fins that extend in a first direction in the first region, second active fins that extend in the first direction in the second region, a first field insulating layer between the first active fins and that extend in a second direction, a second field insulating layer between the second active fins and extending in the second direction, a gate line that extends in the second direction on the second field insulating layer, the gate line linearly along with the first field insulating layer, a gate isolation layer between the first field insulating layer and the gate line, and gate spacers that extend in the second direction, the gate spacers in contact with both sidewalls of each of the first field insulating layer, the gate line, and the gate isolation layer.

Abstract: A pellicle for extreme ultraviolet (EUV) lithography is based on yttrium carbide and used in a EUV lithography process. The pellicle for EUV lithography includes a pellicle layer that has a core layer containing yttrium carbide. The yttrium carbide is YCx in which the atomic percentage of carbon is within a range of 25% to 45%.

Abstract: An emissive display device includes a display area which includes a plurality of pixels, and a driver disposed at a side of the display area, where the driver includes at least two emission signal stages disposed in one row, and an input signal line connected to the emission signal stages, and the at least two emission signal stages are connected to the same input signal line.

Abstract: Disclosed is a parallel processor. The parallel processor includes a processing element array including a plurality of processing elements arranged in rows and columns, a row memory group including row memories corresponding to rows of the processing elements, a column memory group including column memories corresponding to columns of the processing elements, and a controller to generate a first address and a second address, to send the first address to the row memory group, and to send the second address to the column memory group. The controller supports convolution operations having mutually different forms, by changing a scheme of generating the first address.

Abstract: This application relates to a method for manufacturing a pellicle for extreme ultraviolet lithography. In one aspect, the method includes forming a support layer of a silicon nitride material on a silicon substrate, and forming a core layer of a graphene material on the support layer. The method may also include forming a graphene defect healing layer on the core layer by selectively forming a material of MeOxNy (Me is one of Si, Al, Ti, Zr, and Hf, x+y=2) at a grain boundary of the core layer in an atomic layer deposition process using heat in order to heal defects generated in graphene forming the core layer without additional damage to the graphene. The method may further include a capping layer on the graphene defect healing layer, wherein a central portion of the silicon substrate under the support layer is removed to form an opening partially exposing the support layer.

Abstract: Disclosed herein is a method for outer-product-based matrix multiplication for a floating-point data type includes receiving first floating-point data and second floating-point data and performing matrix multiplication on the first floating-point data and the second floating-point data, and the result value of the matrix multiplication is calculated based on the suboperation result values of floating-point units.

Abstract: Proposed is a data parallel processing method for a recurrent neural network in a neural network accelerator based on a systolic array. A data processing device receives voice data of a user in a predetermined time section. The data processing device generates a plurality of voice data units by separating the voice data by sentence. The data processing device generates a plurality of input vectors by vectorizing the plurality of voice data units. The data processing device inputs the plurality of input vectors to a neural network accelerator based on a systolic array. In this manner, the data is processed.

Abstract: A pellicle for extreme ultraviolet (EUV) lithography is based on yttrium carbide and used in a EUV lithography process. The pellicle for EUV lithography includes a pellicle layer that has a core layer containing yttrium carbide. The yttrium carbide is YCX (0.25<x<0.45).

Abstract: Disclosed herein are an apparatus and method for managing cache memory. The apparatus includes one or more processors and executable memory for storing at least one program executed by the one or more processors. The at least one program reads an s1-tag and an s2-tag of cache memory upon receiving an access request address for reading data in response to a request to access the cache memory, checks whether the access request address matches the value of the s1-tag and the value of the s2-tag, and reads the data from data memory when the access request address matches all of the value of the s1-tag and the value of the s2-tag.

Abstract: The present disclosure relates to a single nucleic acid for real-time detection for SNP analysis of apolipoprotein E (ApoE) gene and a detection method using the same. More specifically, the present disclosure relates to a method of detecting in real time single nucleotide polymorphisms of ApoE gene by the use of a single nucleic acid, which has a structure of X-Y-Z and consists of a nucleotide sequence capable of complementary binding to a portion or all of the nucleotide sequence of the ApoE gene showing single nucleotide polymorphisms, and a kit therefor.

Abstract: The present invention relates to a method for manufacturing a sample for thin film property measurement and analysis, and a sample manufactured thereby and, more specifically, to: a method for manufacturing a sample capable of measuring or analyzing various properties in one sample; and a sample manufactured thereby.

Abstract: Provided is a neural network accelerator which performs a calculation of a neural network provided with layers, the neural network accelerator including a kernel memory configured to store kernel data related to a filter, a feature map memory configured to store feature map data which are outputs of the layers, and a Processing Element (PE) array including PEs arranged along first and second directions, wherein each of the PEs performs a calculation using the feature map data transmitted in the first direction from the feature map memory and the kernel data transmitted in the second direction from the kernel memory, and transmits a calculation result to the feature map memory in a third direction opposite to the first direction.

Abstract: This application relates to a pellicle for extreme ultraviolet lithography used in a lithography process using extreme ultraviolet rays. In one aspect, the pellicle includes a pellicle layer formed of an M-? material in which M is combined with ?. Here, M is one of Si, Zr, Mo, Ru, Y, W, Ti, Ir, or Nb, and a is at least two of B, N, C, O, or F.

Abstract: This application relates to a pellicle for extreme ultraviolet lithography containing amorphous carbon and a manufacturing method thereof. In one aspect, the pellicle includes a substrate having an opening formed in a central portion, a support layer formed on the substrate to cover the opening, and a pellicle layer formed on the support layer and containing amorphous carbon. The pellicle layer may include a core layer formed on the support layer, and a capping layer formed on the core layer and may further include a buffer layer. At least one of the core layer, the capping layer, or the buffer layer may be an amorphous carbon layer.

Abstract: A pellicle for extreme ultraviolet lithography containing molybdenum carbide is disclosed. The pellicle includes a substrate having an opening formed in a central portion, and a pellicle layer formed on the substrate to cover the opening and including a molybdenum carbide containing layer that contains molybdenum carbide expressed as MoC1-x (0<x<1). The pellicle layer includes a core layer formed on the substrate to cover the opening, and the core layer may be the molybdenum carbide containing layer.

Abstract: This application relates to a pellicle for extreme ultraviolet lithography based on yttrium (Y) and used in a lithography process using extreme ultraviolet rays. In one aspect, the pellicle includes a pellicle layer including a core layer formed of an yttrium-based material expressed as Y-M (M is one of B, Si, O, or F).

Abstract: This application relates to a pellicle for extreme ultraviolet lithography and a manufacturing method thereof using the low-temperature direct growth method of multilayer graphene. In one aspect, the method includes forming an etch stopper on a substrate, forming a seed layer on the etch stopper, the seed layer including at least one of amorphous boron, BN, BCN, B4C, or Me-X (Me is at least one of Si, Ti, Mo, or Zr, and X is at least one of B, C, or N). The method may also include forming a metal catalyst layer on the seed layer; forming an amorphous carbon layer on the metal catalyst layer, and directly growing multilayer graphene on the seed layer through interlayer exchange between the metal catalyst layer and the amorphous carbon layer by performing a low-temperature heat treatment at 450° C. to 600° C.

Abstract: A pellicle for extreme ultraviolet lithography has an extreme ultraviolet transmittance of 90% or more and also has thermal stability, mechanical stability, and chemical durability. The pellicle includes a support layer and a pellicle layer. The support layer has an opening formed in a central portion thereof. The pellicle layer is formed on the support layer to cover the opening and includes ZrBx (2<x<16).

Abstract: A nanoscale thin film structure and implementing method thereof, and, more specifically, a nanoscale thin film structure of which target structure is designed with quantized thickness, and a method to implement the nanoscale thin film structure by which the performance of the manufactured nanodevice can be implemented the same as the designed performance, thereby applicable to high sensitivity high performance electronic/optical sensor devices.