Abstract: Disclosed is a method for preparing a poly(ethersulfonimide or ethersulfonamide) copolymer using cyclic oligomers, and more particularly, to a method for preparing a poly(ethersulfonimide or ethersulfonamide) copolymer by preparing a cyclic ether sulfone oligomer and a cyclic imide or amide oligomer and subjecting the cyclic ether sulfone oligomer and the cyclic imide or amide oligomer to ring-opening copolymerization in the presence of an alkali metal fluoride catalyst.

Abstract: Disclosed is a lithium secondary battery comprising a cathode, an anode, an electrolyte and a separator, wherein the anode comprises an anode active material having a specific surface area of 3 m2/g or less, and the electrolyte comprises 0.1˜6 parts by weight of a propane sultone-based compound based on 100 parts by weight of the electrolyte. The lithium secondary battery solves the problem of performance degradation caused by the use of an increased amount of a propane sultone-based compound required to form a SEI film on the surface of an anode upon the first charge cycle. Also, the lithium secondary battery can provide improved cycle characteristics and high-temperature storage characteristics.

Abstract: The following description provides a method for preparing electrodes for solar cells, substrates for the solar cell prepared using the same, and the solar cells. The method forms conductive paste on substrates by a printing method and a wet metal plating method, and forms a non-porous cell structure by directly plating a crystallized metal layer on the substrates via etching without using excessive non-crystallized conductive paste or plating the porous conductive paste with metal.

Abstract: The present invention provides a method for manufacturing an electrode for a solar cell, a substrate for the solar cell manufactured by the same, and a solar cell manufactured by the same. The present invention forms an electrode of a specific pattern through an offset printing system, and plates the electrode through a plating process to fill the metal-free region of a bus bar electrode with a plating metal and thus reduce the sheet resistance of the bus bar. The present invention obtains a finger electrode with a line with 100 microns or less through the combination of an offset printing process and a wet metal plating process. Further, the present invention obtains an electrode with an aspect ratio of 0.2 to 0.6 to reduce light shield effects and improve efficiency of the solar cell. The present invention eliminates the necessity of multilayer offset printing, and thus to reduce use of expensive conductive paste with might otherwise increase in proportion to the number of times printing is performed.

Abstract: The present invention relates to a method of preparing a microcapsule with a double-layered structure which comprises the steps of performing an interfacial polymerization of an amine-aldehyde prepolymer on droplets containing an inorganic metal precursor selected from carboxylate and alkoxide compounds, and hydrolyzing the including inorganic precursors for formation of inorganic inner layer. The method of the present invention can prepare a microcapsule with a double-layered structure of an inorganic inner layer and a polymer outer layer, which is effective for eluting and substituting a core material inside the capsule.

Abstract: The present disclosure relates to a semiconductor light-emitting device and a method of manufacturing the same, and more particularly, to a III-nitride semiconductor light-emitting device which improves external quantum efficiency by forming an irregular portion on a surface of a semiconductor layer by a protrusion formed on a substrate, and a method of manufacturing the same.

Abstract: The present disclosure relates to an III-nitride compound semiconductor light emitting device and a method of manufacturing the same. The III-nitride compound semiconductor light emitting device includes a substrate with a groove formed therein, a plurality of nitride compound semiconductor layers being grown on the substrate, and including an active layer for generating light by recombination of electron and hole, and an opening formed on the groove along the plurality of nitride compound semiconductor layers.

Abstract: The present disclosure relates to an III-nitride semiconductor light emitting device, particularly, an electrode structure thereof. The III-nitride semiconductor light emitting device includes a substrate, a plurality of III-nitride semiconductor layers grown on the substrate, and composed of a first III-nitride semiconductor layer with first conductivity, a second III-nitride semiconductor layer with second conductivity different from the first conductivity, and an active layer positioned between the first III-nitride semiconductor layer and the second III-nitride semiconductor layer, for generating light by recombination of electrons and holes, and a hole passing through the substrate and the plurality of III-nitride semiconductor layers.

Abstract: A nitride semiconductor template having nano-voids at an interface between a substrate having one embossed surface and a nitride semiconductor layer can be rapidly prepared by hydride vapor phase epitaxy (HVPE) growth of the nitride semiconductor layer on the embossed surface of the substrate.

Abstract: The present invention relates to a process for preparing a chiral ester according to the formula (100): by reacting (i) a racemic alcohol, (ii) a selected ruthenium complex to activate racemization of the racemic alcohol, (iii) a lipase to selectively acylate one enantiomer of the racemic alcohol, and (iv) an acyl donor compound to supply an acyl group to the lipase.

Abstract: The present invention relates to a method for preparing a chiral ester and more particularly, the method for preparing an optically pure chiral ester from an alkenyl ester at a high yield by mixing and reacting: an alkenyl ester; a ruthenium complex to activate reduction reaction of said alkenyl ester and racemization; a lipase to acylate selectively one of enantiomers of said alkenyl ester; and a reducing agent to supply a hydride to said ruthenium complex. Said optically pure chiral ester of the present invention can be prepared by one-step synthesis from various types of alkenyl esters at a high yield.

Abstract: The present invention relates to a method for preparing a chiral ester and more particularly, the method for preparing an optically pure chiral ester from an alkenyl ester at a high yield by mixing and reacting:

Abstract: This invention relates to a glass composition for plasma display panel and more particularly, to a glass composition for plasma display panel having the following physical properties of glass without containing SrO in principle, i.e., strain point: 580.about.610.degree. C.; transition point: 610.degree. C. or more; thermal expansion coefficient: 80.about.87.times.10.sup.-7 /.degree.C.; working temperature equivalent to 10,000 poise: 1,200.degree. C. or less; liquidus temperature: 1,100.degree. C. or more; viscosity at liquidus temperature: 20,000 poise or more.