Abstract: Semiconductor devices are provided. A semiconductor device includes first and second stacks of electrodes. Moreover, the semiconductor device includes first and second connection lines that connect the first and second stacks of electrodes. In some embodiments, the first connection lines have a first length and the second connection lines have a second length that is longer than the first length of the first connection lines. In some embodiments, the first connection lines connect inner portions of the first stack of electrodes to inner portions of the second stack of electrodes. In some embodiments, the second connection lines connect outer portions of the first stack of electrodes to outer portions of the second stack of electrodes.

Abstract: The present invention relates to a method of preparing a vinyl chloride polymer having good thermal stability by restraining a dehydrochlorination reaction due to heat or ultraviolet rays, and a vinyl chloride polymer prepared thereby. According to the preparation method, the adding point of a modifier is controlled, and a vinyl chloride polymer markedly restraining the generation of dehydrochloric acid due to heat or ultraviolet rays may be prepared. Therefore, the preparation method of the vinyl chloride polymer via the emulsion polymerization and the vinyl chloride polymer prepared thereby in the present invention may be readily applied to industries requiring the vinyl chloride polymer such as industries concerning a vinyl chloride resin and a molded article.

Abstract: The present invention relates to a method of preparing a vinyl chloride polymer having good thermal stability due to the restraint of dehydrochlorination by heat or ultraviolet rays, and a vinyl chloride polymer prepared thereby. In the preparation method, a modifier is introduced at the end of a polymerization process to impart the vinyl chloride polymer with high thermal stability without inducing modification. Therefore, the generation of dehydrochlorination due to heat or ultraviolet rays may be markedly restrained, thermal stability may be improved, and discoloration or the modification of physical properties may be prevented in the vinyl chloride polymer thus prepared.

Abstract: A transporting system includes a first rail including a first region and a second region, the first region being a region where the first rail extends linearly and the second region being a region where the first rail is curved. A second rail includes a third region, separated from the first region, and a fourth region overlapping the second region, wherein the first and second rails merge at a joining location that includes the second region and the fourth region. Optical lines are disposed in the second region and the fourth region, wherein the optical lines are parallel to each other in the fourth region. A first transporting unit travels on the first rail. A second transporting unit travels on the second rail. A first controller controls the traveling of the first and second transporting units using light transmitted or received through the optical lines.

Abstract: The present invention relates to a method of preparing a vinyl chloride polymer having good thermal stability due to the restraint of dehydrochlorination by heat or ultraviolet rays, and a vinyl chloride polymer prepared thereby. In the preparation method, a modifier is introduced at the end of a polymerization process to impart the vinyl chloride polymer with high thermal stability without inducing modification. Therefore, the generation of dehydrochlorination due to heat or ultraviolet rays may be markedly restrained, thermal stability may be improved, and discoloration or the modification of physical properties may be prevented in the vinyl chloride polymer thus prepared.

Abstract: The present invention relates to a method of preparing a vinyl chloride polymer having good thermal stability by restraining a dehydrochlorination reaction due to heat or ultraviolet rays, and a vinyl chloride polymer prepared thereby. According to the preparation method, the adding point of a modifier is controlled, and a vinyl chloride polymer markedly restraining the generation of dehydrochloric acid due to heat or ultraviolet rays may be prepared. Therefore, the preparation method of the vinyl chloride polymer via the emulsion polymerization and the vinyl chloride polymer prepared thereby in the present invention may be readily applied to industries requiring the vinyl chloride polymer such as industries concerning a vinyl chloride resin and a molded article.

Abstract: The present invention relates to a method of preparing a vinyl chloride polymer having good thermal stability due to the restraint of dehydrochlorination by heat or ultraviolet rays, and a vinyl chloride polymer prepared thereby. In the preparation method, a modifier is introduced at the end of a polymerization process to impart the vinyl chloride polymer with high thermal stability without inducing modification. Therefore, the generation of dehydrochlorination due to heat or ultraviolet rays may be markedly restrained, thermal stability may be improved, and discoloration or the modification of physical properties may be prevented in the vinyl chloride polymer thus prepared.

Abstract: A variable resistance memory device and a method of manufacturing the same are provided. The variable resistance memory device includes a first insulating layer formed on a semiconductor substrate, the first insulating layer having a first hole formed therein. A switching device is formed in the first hole. A second insulating layer is formed over the first insulating layer and the second insulating layer includes a second hole. A lower electrode is formed along a surface of the second insulating layer that defines the second hole. A spacer is formed on the lower electrode and exposes a portion of the surface of the lower electrode. A variable resistance material layer is formed in the second hole, and an upper electrode is formed on the variable resistance material layer.

Abstract: The present invention relates to a method of preparing a vinyl chloride polymer having good thermal stability due to the restraint of dehydrochlorination by heat or ultraviolet rays, and a vinyl chloride polymer prepared thereby. In the preparation method through bulk polymerization, a modifier is introduced to a polymerization process to impart the vinyl chloride polymer with high thermal stability without inducing modification. Therefore, the preparation method via the bulk polymerization of the vinyl chloride polymer and the vinyl chloride polymer prepared thereby according to the present invention may be readily applied to industries requiring thereof such as industries concerning a vinyl chloride resin and the molded article thereof.

Abstract: The present invention relates to a vinyl chloride polymer having good thermal stability due to the restraint of dehydrochlorination by heat or ultraviolet rays, and a method of preparing the same. The generation of the dehydrochlorination of the vinyl chloride polymer due to heat or ultraviolet rays may be markedly restrained, the thermal stability thereof may be improved, and the discoloration thereof or the modification of the physical properties thereof may be prevented. In addition, a modifier may be introduced to a polymerization process at the end of the polymerization, and high thermal stability may be attained without generating the transformation of the vinyl chloride polymer.

Abstract: Disclosed is a method for inspecting a flat panel. The method for inspecting the flat panel includes the steps of: arranging a camera at a measurement location of the flat panel by horizontally moving at least one of the flat panel and the camera; automatically focusing the camera with respect to a measuring target of the flat panel at the measurement location; acquiring a plurality of images for the measuring target by vertically moving the focused camera within a set region on the basis of the present location of the camera when focusing the camera; selecting the image having the most definition for the measuring target among the acquired images; processing the selected image; and determining whether the measuring target is defective or not.

Abstract: An apparatus and method for processing data capable of providing an application with data converted based on various data types is provided. The data processing apparatus converts data, which is input from an input system, into various types of data. Various applications receive and use the data that is converted in the data processing apparatus.

Abstract: A variable resistance memory device and a method of manufacturing the same are provided. The variable resistance memory device includes a first insulating layer formed on a semiconductor substrate, the first insulating layer having a first hole formed therein. A switching device is formed in the first hole. A second insulating layer is formed over the first insulating layer and the second insulating layer includes a second hole. A lower electrode is formed along a surface of the second insulating layer that defines the second hole. A spacer is formed on the lower electrode and exposes a portion of the surface of the lower electrode. A variable resistance material layer is formed in the second hole, and an upper electrode is formed on the variable resistance material layer.

Abstract: The present invention relates to a technology for providing a place/time-based local interactive service, which provides multi-formatted content information to a user moving while carrying a smart terminal having a dedicated application installed therein. In particular, when moving into a place were a specific wired/wireless AP is installed, a user who carries a smart terminal with a dedicated application activated therein can receive multi-formatted content information previously mapped with the place using a place/time, without a separate manipulation of the smart terminal. According to the present invention, time periods during which the user carrying the smart terminal stays at the place where the specific wired/wireless AP is installed are accumulated and managed using time coins, and the user is then given a benefit according to the accumulated time periods.

Abstract: A variable resistance memory device and a method of manufacturing the same are provided. The variable resistance memory device includes a first insulating layer formed on a semiconductor substrate, the first insulating layer having a first hole formed therein. A switching device is formed in the first hole. A second insulating layer is formed over the first insulating layer and the second insulating layer includes a second hole. A lower electrode is formed along a surface of the second insulating layer that defines the second hole. A spacer is formed on the lower electrode and exposes a portion of the surface of the lower electrode. A variable resistance material layer is formed in the second hole, and an upper electrode is formed on the variable resistance material layer.

Abstract: A variable resistance memory device includes a plurality of first conductive lines extended in a first direction, a plurality of second conductive lines arranged over or under the first conductive lines and extended in a second direction crossing the first direction, an insulating layer disposed between the first conductive lines and the second conductive lines and having a trench extended in the second direction and defined by a first side wall and a second sidewall facing each other and a bottom surface connecting the first sidewall and the second sidewall, and a variable resistance material layer formed on the first and second sidewalls and the bottom surface of the trench, wherein the first and second sidewalls of the trench overlap two adjacent second conductive lines, respectively.

Abstract: A variable resistance memory device and a method of manufacturing the same are provided. The variable resistance memory device includes a first insulating layer formed on a semiconductor substrate, the first insulating layer having a first hole formed therein. A switching device is formed in the first hole. A second insulating layer is formed over the first insulating layer and the second insulating layer includes a second hole. A lower electrode is formed along a surface of the second insulating layer that defines the second hole. A spacer is formed on the lower electrode and exposes a portion of the surface of the lower electrode. A variable resistance material layer is formed in the second hole, and an upper electrode is formed on the variable resistance material layer.

Abstract: Disclosed is a method for inspecting a flat panel. The method for inspecting the flat panel includes the steps of: arranging a camera at a measurement location of the flat panel by horizontally moving at least one of the flat panel and the camera; automatically focusing the camera with respect to a measuring target of the flat panel at the measurement location; acquiring a plurality of images for the measuring target by vertically moving the focused camera within a set region on the basis of the present location of the camera when focusing the camera; selecting the image having the most definition for the measuring target among the acquired images; processing the selected image; and determining whether the measuring target is defective or not.

Abstract: Disclosed herein is a switching board having switching elements for temperature measurement mounted on a printed circuit board (PCB) having a circuit electrically connected to a unit cell constituting a battery module, the switching board including an upper board having a pair of switching elements, a temperature detection element, and one or more vertical through holes, the switching elements being electrically connected to the circuit, the temperature detection element and the vertical through holes being disposed between the switching elements, and a lower board having a heating pad at a position corresponding to the vertical through holes and the temperature detection element.

Abstract: A phase-change random access memory device and a method of manufacturing the same are provided. The method includes providing a semiconductor substrate including a heating electrode, forming an interlayer insulating layer including a preliminary phase-change region on the semiconductor substrate, reducing a diameter of an inlet portion of the preliminary phase-change region to be smaller than that of a bottom portion of the preliminary phase-change region, filling an insulating layer having a void in the preliminary phase-change region using a difference between the diameter of the inlet portion and the diameter of the bottom portion, removing the insulating layer to an interface between the inlet portion and the bottom portion, thereby forming a key hole exposing the heating electrode, and forming a phase-change material layer to be buried in the key hole and the preliminary phase-change region.