Abstract: Provided is a method of driving a display panel having a charge trap device and an organic light emitting diode (OLED). The charge trap device includes a nanocrystal layer. The nanocrystal layer includes nanocrystals, which are crystallized and dispersed, and a barrier layer, which buries the nanocrystals. When a program voltage is applied, charges are trapped in the nanocrystals, and the OLED emits light at a predetermined luminance with the application of a read voltage. Data signals are sequentially applied to all pixels of the display panel to express desired grayscales. The pixels of the display panel receive the read voltage and emit light at the same time.

Abstract: Provided are a luminescent device and a method of manufacturing the same. The luminescent device includes a charge trapping layer having bistable conductance and negative differential resistance (NDR) characteristics, and an organic luminescent layer electrically connected to the charge trapping layer. The charge trapping layer comprise a nanocrystal layer intervened in an organic layer, and the nanocrystal layer comprises a plurality of nanocrystals.

Abstract: A non-volatile memory device includes a plurality of unit cells. Each unit cell includes lower and upper electrodes over a substrate, a conductive organic material layer between the lower and the upper electrodes, and a nanocrystal layer located within the conductive organic material layer, wherein the nanocrystal layer includes a plurality of nanocrystals surrounded by an amorphous barrier. The unit cell receives a plurality of voltage ranges to perform a plurality of operations. A read operation is performed when an input voltage is in a first voltage range. A first write operation is performed when the input voltage is in a second voltage range higher than the first voltage range. A second write operation is performed when the input voltage is in a third voltage range higher than the second voltage range. An erase operation is performed when the input voltage is higher than the third voltage range.

Abstract: A non-volatile memory device includes a plurality of unit cells. Each unit cell includes lower and upper electrodes over a substrate, a conductive organic material layer between the lower and the upper electrodes, and a nanocrystal layer located within the conductive organic material layer, wherein the nanocrystal layer includes a plurality of nanocrystals surrounded by an amorphous barrier. A read operation is performed when an input voltage is in a first voltage range. A first write operation is performed when the input voltage is in a second voltage range higher than the first voltage range. A second write operation is performed when the input voltage is in a third voltage range higher than the second voltage range. An erase operation is performed when the input voltage is higher than the third voltage range.

Abstract: A non-volatile memory device includes lower and upper electrodes over a substrate, a conductive organic material layer between the lower and the upper electrodes, and a nanocrystal layer located within the conductive organic material layer, wherein the nanocrystal layer includes a plurality of nanocrystals surrounded by an amorphous barrier, wherein the device has a multi-level output current according to a voltage level of an input voltage coupled to the lower and the upper electrodes during a data read operation.

Abstract: Provided is a method of driving a display panel having a charge trap device and an organic light emitting diode (OLED). The charge trap device includes a nanocrystal layer. The nanocrystal layer includes nanocrystals, which are crystallized and dispersed, and a barrier layer, which buries the nanocrystals. When a program voltage is applied, charges are trapped in the nanocrystals, and the OLED emits light at a predetermined luminance with the application of a read voltage. Data signals are sequentially applied to all pixels of the display panel to express desired grayscales. The pixels of the display panel receive the read voltage and emit light at the same time.

Abstract: Provided are a luminescent device and a method of manufacturing the same. The luminescent device includes a charge trapping layer having bistable conductance and negative differential resistance (NDR) characteristics, and an organic luminescent layer electrically connected to the charge trapping layer.

Abstract: A non-volatile memory device includes lower and upper electrodes over a substrate, a conductive organic material layer between the lower and the upper electrodes, and a nanocrystal layer located within the conductive organic material layer, wherein the nanocrystal layer includes a plurality of nanocrystals surrounded by an amorphous barrier, wherein the device has a multi-level output current according to a voltage level of an input voltage coupled to the lower and the upper electrodes during a data read operation.

Abstract: A nonvolatile memory device and a method of manufacturing the same are provided. The nonvolatile memory device which is convertible among a high current state, an intermediate current state, and a low current state, said device includes upper and lower conductive layers; a conductive organic layer comprising a conductive organic polymer and which is formed between the upper and lower conductive layers and has a bistable conduction property; and nanocrystals are formed in the conductive organic layer. The conductive organic polymer may be poly-N-vinylcarbazole (PVK) or polystyrene (PS). The method is characterized in that a conductive organic layer is formed by applying a conductive organic material such as PVK or PS using spin coating. Therefore, it is possible to provide a highly-integrated memory device that consumes less power and provides high operating speed. In addition, it is possible to provide the thermal stability of a memory device by using a conductive organic polymer.